High electron mobility single-crystalline ZnSnN₂on ZnO (0001) substrates

Abstract

Making a systematic effort, we have developed a single-crystalline ZnSnN2 on ZnO (0001) by reactive magnetron co-sputtering. Epitaxial growth was achieved at 350°C by co-sputtering from metal targets in nitrogen...

Point Defects in a Two-Dimensional ZnSnN2 Nanosheet: A First-Principles Study on the Electronic and Magnetic Properties

“…9 Furthermore, a large absorption coefficient in the range of UV−Vis−NIR is attributed to the ZnSnN 2 material, which makes it competitive with more commonly used photovoltaic materials such as GaAs, CdTe, and InP. 2,7,10 ZnSnN 2 can fulfill the tetrawatt power requirement with its very low cost and environmental compatibility 7 by plentiful and nontoxic materials. 11 Due to these favorable properties, ZnSnN 2 is appealing in terms of both economic and environmental aspects.…”

“…5 It is a rather undeveloped member of the Zn−IV−N 2 family and the knowledge about ZnSnN 2 is scarce and somewhat contradictory. 2,10,13 The first computational research was reported in 2008. 14 The ZnSnN 2 thin film was first synthesized in 2012, 15,16 and its powder form was first prepared in 2016.…”

“…11,17 Recently, the first single-crystalline ZnSnN 2 material has been reported. 2 For T h i s c o n t e n t i s this purpose, many investigations have been started to elucidate the electronic, optical, and other properties of ZnSnN 2 . 10,18,19 Based on the cation-sublattice ordering, two phases of ZnSnN 2 are available (i.e., ordered and disordered phases).…”

“…Among the II–IV nitrides, the Zn–IV–N 2 class has attracted more attention . The advantages of Zn–IV–nitrides relative to the nitrides of group III are as follows: (i) abundant natural elements as constituents, making them cost-effective; (ii) absence of phase separation across the whole alloying range; (iii) environmental friendliness; and (iv) facility for p-type doping and controlling by an easy combination of elements and retrieving the defects. , Unlike the materials with ionic and covalent bonding, the median bonding nature of Zn–IV–N 2 makes them more practical . ZnSnN 2 as an inseparable member of the class of Zn–IV–nitrides can be used in different fields such as photovoltaics, optoelectronics, photocatalysis, etc. − It also presents spontaneous polarization and piezoelectric effects .…”

ZnSnN2 in Real Space and k‐Space: Lattice Constants, Dislocation Density, and Optical Band Gap

“…For example, Gogova et al., have reported the growth of single crystalline hexagonal layers at 350 °C by magnetron sputtering on (0002) ZnO substrates providing a lattice mismatch of 4.2%. [ 12 ] Le et al., demonstrated epitaxially grown wurtzite films by plasma‐assisted molecular beam epitaxy (PAMBE) at 450 and 550 °C, using ZnO buffer layers. [ 10 ] Thus, even though the initial demonstrations of the ZnSnN 2 epitaxy have been made, there is a room for explorations.…”