High Electron Mobility Germanium FinFET Fabricated by Atomic Layer Defect-Free and Roughness-Free Etching

Ohori, Daisuke; Fujii, T.; Noda, Shinichi; Mizubayashi, Wataru; Endo, Kazuhiko; Lee, Yao-Jen; Tarng, Jenn‐Hwan; Li, Yiming; Samukawa, Seiji

doi:10.1109/ojnano.2021.3055150

Cited by 8 publications

(7 citation statements)

References 12 publications

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“…As a result, the NB can suppress to generate of the etching defects because the high-aspect-ratio carbon aperture electrode prevents UV irradiation [25][26][27][28][29][30]. Thus, the NBE is a both defect-free and anisotropic dry etching, it has the potential to apply good performance for micro-/nano-scale pattern etching [31][32][33], and the reduction of IQE is suppressed [17,27,29,[34][35][36][37].…”

Section: Methodsmentioning

confidence: 99%

Hydrogen iodide (HI) neutral beam etching characteristics of InGaN and GaN for micro-LED fabrication

et al. 2023

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We investigated the etching characteristics of hydrogen iodide (HI) neutral beam etching (NBE) of GaN and InGaN and compared with Cl2 NBE. We showed the advantages of HI NBE vs Cl2 NBE, namely: higher InGaN etch rate, better surface smoothness, and significantly reduced etching residues. Moreover, HI NBE was suppressed of yellow luminescence compared with Cl2 plasma. InClx is a product of Cl2 NBE. It does not evaporate and remains on the surface as a residue, resulting in a low InGaN etching rate. We found that HI NBE has a higher reactivity with In resulting in InGaN etch rates up to 6.3 nm/min, and low activation energy for InGaN of approximately 0.015 eV, and a thinner reaction layer than Cl2 NBE due to high volatility of In- I compounds. HI NBE resulted in smoother etching surface with a root mean square average (rms) of 2.9 nm of HI NBE than Cl2 NBE (rms: 4.3 nm) with controlled etching residue. Moreover, the defect generation was suppressed in HI NBE vs. Cl2 NBE, as indicated by lower yellow luminescence intensity increase after etching. Therefore, HI NBE is potentially useful for high throughput fabrication of μLEDs.

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Section: Methodsmentioning

confidence: 99%

Hydrogen iodide (HI) neutral beam etching characteristics of InGaN and GaN for micro-LED fabrication

et al. 2023

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“…To further investigate, we checked the surface roughness that had caused a significant electron scattering. 32,42) The NBE process can produce a defect-free and atomically smooth sidewall surface, whereas the conventional ICP etching process causes crystal defects and large roughness. The remarkable contrast of the device electric characteristics between the NBE and ICP can thus be explained by the difference in the atomic-level roughness and damages of the etched channels.…”

Section: Effects Of Uv Irradiation On Surface Reaction During Plasma ...mentioning

confidence: 99%

Emerging Plasma Nanotechnology

Samukawa

2022

IEEE Open J. Nanotechnol.

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Developments in plasma process technology have led to innovative advances in the miniaturization and integration of semiconductor devices. However, when semiconductor devices are utilized in the nanoscale domain, defects or damage related to charged particles and ultraviolet (UV) rays emitted from the plasma can emerge, resulting in degraded characteristics for nanodevices. It is thus imperative to come up with a method that suppresses or controls the charge accumulation and ultraviolet (UV) damage in plasma processing. This paper reviews our work on a neutral beam process that suppresses the formation of defects at the atomic layer level on the processed surface, which makes it possible for ideal surface chemical reactions to occur at room temperature. This is vital for the creation of innovative nano-devices in the future.

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“…Interlayer Composite Materials Daisuke Ohori, 1,4,5 Min-Hui Chuang, 4 Asahi Sato, 1 Sou Takeuchi, 1 Masayuki Murata, 3 Atsushi Yamamoto, 3 Ming-Yi Lee, 4 Kazuhiko Endo, 3 Yiming Li, 4,5,6,7,8 Jenn-Hwan Tarng, 4,5,6,7 Yao-Jen Lee, 9 and Seiji Samukawa 1,2,3,5,7…”

Section: Management Of Phonon Transport In Lateral Direction For Gap-controlled Si Nanopillar/sigementioning

confidence: 99%

“…In general, semiconductor devices need to have low heat generation and low power consumption. To improve the performance of the semiconductor device, a metal-oxide-semiconductor fieldeffect transistor (MOSFET) was designed with miniaturization, changing the structure from planer to Fin and nanosheet, and considering the material such as germanium [7][8][9]. In MOSFET, there are three causes of electron mobility reduction: Coulomb, roughness, and phonons.…”

Section: Introductionmentioning

confidence: 99%

Management of Phonon Transport in Lateral Direction for Gap-Controlled Si Nanopillar/SiGe Interlayer Composite Materials

Ohori¹,

Chuang²,

Asahi³

et al. 2021

IEEE Open J. Nanotechnol.

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The phonon transport in the lateral direction for gap-controlled Si nanopillar (NP) /SiGe interlayer composite materials was investigated to eliminate heat generation in the channel area for advanced MOS transistors. The gap-controlled Si NP/SiGe composite layer showed 1/250 times lower thermal conductivity than Si bulk. Then, the phonon transport behavior in lateral direction could be predicted by the combination between the 3-omega measurement method for thermal conductivity and the Landauer approach for phonon transport in Si NP/Si0.7Ge0.3 interlayer composite structure. We found that the NP structure could regulate the phonon transport in the lateral direction by changing the NP gaps by preventing the phonon transportation from the drain region and the potential heat generation. As such, this structure achieves the first step toward phonon transport management in the same electron transportation direction of planar-type MOSFETs and represents a promising solution to heat generation for advanced CMOS devices.

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High Electron Mobility Germanium FinFET Fabricated by Atomic Layer Defect-Free and Roughness-Free Etching

Cited by 8 publications

References 12 publications

Hydrogen iodide (HI) neutral beam etching characteristics of InGaN and GaN for micro-LED fabrication

Hydrogen iodide (HI) neutral beam etching characteristics of InGaN and GaN for micro-LED fabrication

Emerging Plasma Nanotechnology

Management of Phonon Transport in Lateral Direction for Gap-Controlled Si Nanopillar/SiGe Interlayer Composite Materials

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