High-electron-mobility AlGaN∕AlN∕GaN heterostructures grown on 100-mm-diam epitaxial AlN/sapphire templates by metalorganic vapor phase epitaxy

Abstract

Al 0.26 Ga 0.74 N ∕ Al N ∕ Ga N heterostructures with 1-nm-thick AlN interfacial layers were grown on 100-mm-diam epitaxial AlN/sapphire templates and sapphire substrates by metalorganic vapor phase epitaxy. It was found that AlN/sapphire templates significantly enhanced the electron mobility of the two-dimensional electron gas (2DEG) confined at the GaN channel. This can be explained by the high-crystal-quality GaN channel realized by the use of epitaxial AlN/sapphire templates as substrates. The very high Hall mobilities of approximately 2100cm2∕Vs at room temperature and approximately 17000cm2∕Vs at 77K with a 2DEG density of approximately 1×1013∕cm2 were uniformly obtained for AlGaN∕AlN∕GaN heterostructures on 100-mm-diam epitaxial AlN/sapphire templates. The Hall mobility of AlGaN∕AlN∕GaN heterostructures on epitaxial AlN/sapphire templates reached a very high value of 25500cm2∕Vs at 15K.

From High Electron Mobility GaN/AlGaN Heterostructures to Blue-Violet InGaN Laser Diodes. Perspectives of MBE for Nitride Optoelectronics

“…6 we present the RT mobility as a function of 2DEG concentration. Also, recently other groups demonstrated 2DEG mobility slightly above 2000 cm 2 /(V s) at RT [28][29][30]. Fig.…”

Terahertz cyclotron resonance spectroscopy of an AlGaN/GaN heterostructure using a high-field pulsed magnet and an asynchronous optical sampling technique

“…20 The electron effective mass was determined from plotting the terahertz transmission as a function of applied magnetic field, shown in Fig. 3(c).…”

Room temperature mobility above 2100 cm 2 /Vs in Al 0.3 Ga 0.7 N/AlN/GaN heterostructures grown on sapphire substrates by MOCVD

“…Room temperature 2DEG mobility above 2000 cm 2 /Vs has been achieved with AlGaN/GaN heterostructures grown by metalorganic chemical vapor deposition (MOCVD) on 6H-SiC substrates [1] and on sapphire substrates [2], as well as by plasma assisted MBE (PAMBE) on bulk GaN substrates [3]. More recently, a promising AlGaN/AlN/GaN HEMT structure has proved to be effective in improving the electrical properties of 2DEGs [4][5][6][7][8][9]. M. Miyoshi et al published a room temperature 2DEG mobility of 2174 cm 2 /Vs in AlGaN/AlN/GaN structures deposited by MOCVD on epitaxial AlN/sapphire templates [9].…”