The first no-gap OH airglow all-sky imager network was established

The Al x Ga 1 -x N/Al y Ga 1 -y N multiple quantum well (MQW) structure for deep ultraviolet emission has been grown on sapphire by metal organic chemical vapor deposition (MOCVD). High resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), and cathodoluminescence (CL) are used to characterize the structural and optical properties of MQWs, respectively. Clear step flows can be observed in the AFM image indicating a two-dimensional growth model. There are many cracks on the surface of the MQW structure because of the high tensile stress. HRXRD shows multiple satellite peaks to the 2nd order. The HRXRD simulation shows that the MQW period is about 11.5 nm. The emission peak of Al x Ga 1 -x N/Al y Ga 1 -y N MQWs is about 295 nm in the deep ultraviolet region from the CL spectra.

The performances of In0.65Ga0.35N single-junction solar cells with different structures, including various doping densities and thicknesses of each layer, have been simulated. It is found that the optimum efficiency of a In0.65Ga0.35N solar cell is 20.284% with 5 × 1017 cm−3 carrier concentration of the front and basic regions, a 130 nm thick p-layer and a 270 nm thick n-layer.