High electrical conductivity and carrier mobility in oCVD PEDOT thin films by engineered crystallization and acid treatment

Wang, Xiaoxue; Zhang, Xu; Sun, Lei; Lee, Dong‐Wook; Lee, Sunghwan; Wang, Minghui; Zhao, Junjie; Shao‐Horn, Yang; Dincă, Mircea; Palacios, Tomás; Gleason, Karen K.

doi:10.1126/sciadv.aat5780

Cited by 189 publications

(259 citation statements)

References 53 publications

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“…A post-deposition rinsing step removes reaction byproducts. Details of the oCVD process can be found in [4,19].…”

Section: Methodsmentioning

confidence: 99%

“…According to Lee et al [25], temperature-induced changes in oCVD-PEDOT can originate from the formation of Fe(OH) 2 complexes as a result of dedoping reactions in the presence of water and oxygen. [4]. Therefore, the electrical characteristics can be analyzed in the frame of a Schottky model where the current I can be described as…”

Section: Electrical Characterizationmentioning

confidence: 99%

“…Advantages of conducting polymers comprise their chemical and mechanical stability in combination with a high degree of flexibility and processability at ambient temperatures [3]. One very promising polymer is poly(3,4-ethylenedioxythiophene) (PEDOT), which is holeconductive, has reported conductivities>6000 S cm −1 [4], is largely transparent in the visible spectral range and highly flexible [5]. Among many other applications, PEDOT is already used in transparent electrodes [3], in energy conversion and storage devices [6] or for thermoelectrics [7].…”

Section: Introductionmentioning

confidence: 99%

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Controlled formation of Schottky diodes on n-doped ZnO layers by deposition of p-conductive polymer layers with oxidative chemical vapor deposition

Krieg

Zhang²,

Splith³

et al. 2020

Nano Ex.

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We report the controlled formation of organic/inorganic Schottky diodes by depositing poly(3,4ethylenedioxythiophene) (PEDOT) on n-doped ZnO layers using oxidative chemical vapor deposition (oCVD). Current-voltage measurements reveal the formation of Schottky diodes that show good thermal and temporal stability with rectification ratios of 10 7 and ideality factors of ∼1.2. In the frame of a Schottky model, we identify a mean barrier height at the hybrid inorganic-organic interface of 1.28 eV, which is consistent with the difference between the work function of PEDOT and the electron affinity of ZnO. The findings highlight the strength of oCVD to design high-quality hybrid PEDOT/ ZnO heterojunctions with possible applications in electronic and optoelectronic devices.

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“…A post-deposition rinsing step removes reaction byproducts. Details of the oCVD process can be found in [4,19].…”

Section: Methodsmentioning

confidence: 99%

Section: Electrical Characterizationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Controlled formation of Schottky diodes on n-doped ZnO layers by deposition of p-conductive polymer layers with oxidative chemical vapor deposition

Krieg

Zhang²,

Splith³

et al. 2020

Nano Ex.

Self Cite

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“…The π–π stack orientation has a substantial effect on electrical conductivity and other properties of PEDOT films and needs to be modified based on the device application. Wang et al obtained the higher electrical conductivity in oCVD PEDOT films with face‐on dominant orientation compared to their edge‐on dominant counterparts.…”

Section: Optimizing the Properties Of Ocvd Cpmentioning

confidence: 99%

Device Fabrication Based on Oxidative Chemical Vapor Deposition (oCVD) Synthesis of Conducting Polymers and Related Conjugated Organic Materials

Gharahcheshmeh

Gleason

2018

Adv Materials Inter

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lightweight, wearable, and stretchable properties of CPs relative to traditional materials highlight the areas where CPs may find their niche in modern devices. [2] The fabrication of uniform CPs in large scale with high throughput roll-to-roll process is of great importance in industrial sectors. To achieve this purpose, chemical vapor deposition (CVD) along with other vapor deposition methods are the promising approaches to expedite the commercialization process of CPs in large-scale applications.For polymers which dissolve, films can be formed by solution-based methods such as dip-coating and spin-coating. However, CPs, particularly those formed from unfunctionalized monomers, are often insoluble or require solvents which are unsafe and costly to use. The lack of solubility is typically associated with a rigid backbone structure that promotes crystallite formation. As a result, dissolution requires overcoming the associated enthalpy of crystallization.The need for solubilizing polymers is eliminated by employing CVD as the thin film formation technique. A variety of different CVD processes have been developed for vapor phase reactants to undergo similar polymerization mechanisms as those reported for solution synthesis. [3] These include CVD polymer methods for chain growth by free radical or cationic initiation, or by condensation polymerization. For most conjugated macromolecules, the desired variant of the CVD method needs to mimic the step-growth polymerization mechanism in order to obtain optimized properties, such as electrical conductivity. This motivated the invention of oxidative CVD (oCVD) in which the vacuum chamber design, strategy for reactant vapor introduction, and process conditions are optimized for step-growth polymerization. Vapor deposition methods which are not mechanistically motivated, such as thermal evaporation, pulsed laser deposition, and plasma-enhanced CVD, can result in conjugated polymer films having properties that are insufficient for integration into many types of devices. Thus, one major significance of achieving conjugated polymers having highly desirable characteristics by oCVD is the ability to fabricate state-of-the-art optoelectronic and energy storage devices.The oCVD process is a single-step method to convert vapor phase monomers, along with vapors of oxidant, into thin CP films. [3,4] At the surface of the substrate, step-growth Conducting polymers (CPs) combine electronic conductivity, optical transparency, and mechanical flexibility compatible with lightweight substrates. Due to these features CPs exhibit promising performance for a wide range of applications including electronic, optoelectronic, electrochemical, optochemical, and energy storage and harvesting devices. Fabrication of high-quality CPs thin film in a large scale is of high demand in multiple industrial sectors. Chemical vapor deposition (CVD) is a promising approach for scale-up and commercialization of CPs in large-scale thin film applications by a roll-to-roll process. The CVD technique is a versati...

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“…Mater. [35,36,[38][39][40][41][42] Moreover, domains show distinctive ribbed thickness variations and needle-like crystallites are occasionally apparent at the boundaries. In order to study underlying reasons for such variations, atomic force microscopy (AFM) was utilized to obtain information on the morphology and surface features of the individual channels.…”

Section: Wwwadvelectronicmatdementioning

confidence: 99%

Printed Flexible Organic Transistors with Tunable Aspect Ratios

Sadeghi

Delparastan

Pierre

et al. 2019

Adv Elect Materials

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film transistor show device performance reaching that of amorphous Si and solution-processed metal oxides. This high performance makes SOCs p-type OTFTs a strong candidate for several future complementary metal-oxide semiconductor applications. [13][14][15] Modulation of scale ratio of devices in a large array is one of the important parameters that governs circuit design. While most printing techniques can provide faster fabrication processes, the rapid on-demand modulation of W/L scale ratio in large array of devices remains as a challenge and a topic to investigate; especially for the myriad of specified circuit designs and application requirements. For instance, the tuning of the gain in each stage of an amplifier [16][17][18] or logic circuits [5] requires the modulation of OTFT W/L ratio. These configuration changes can be challenging, costly, and time consuming for common electrode printing techniques, such as screen printing and gravure printing. [19][20][21][22] These conventional mask-based approaches utilize a fixed pattern transfer that requires a full re-design for every new device structure. [21,23,24] Inkjet printing on the other hand is a nonimpact digital prototyping method that provides instant change of patterns. [25,26] This elimination of mask can reduce the processing costs especially for larger-scale production. [27] However, throughput of inkjet printing can become a limiting factor, especially when depositing over large area. [28] Interdigitated source and drain structure have been used in previous reports as a method to modify W/L ratio for a specific circuit design. [17,[29][30][31] The channel width (W) is modulated by changing the finger count. Meanwhile, channel length (L) is the smallest space between source and drain electrodes, and the resolution is associated to the printing technique. Low switching speed is one of the drawbacks of printed OTFTs compared to conventional Si technology, which can result from a number of factors such as mobility, dielectric layer thickness, and channel length. Achieving channel lengths smaller than 10 µm while maintaining high device yield is very challenging with printing techniques, especially for low-viscosity inks. The solution found to overcome this challenge is to utilize a combination of patterning techniques including the combination of conventional photolithography and direct-write printing techniques. [32] In parallel, there has been an interest to develop methods to decrease the source and drain electrode geometry and channel length using many printing methods. Interdigitated source and drain (SD) electrodes are typically used in electronics to increase channel width while maintaining small channel lengths, resulting in higher W/L ratios. There are few reports on printed interdigitated A fabrication technique that allows aspect ratio modulation in a large array of organic thin film transistors (OTFTs) is demonstrated. In this design, discrete interdigitated source and drain electrodes can be individually selected to create a range of aspe...

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High electrical conductivity and carrier mobility in oCVD PEDOT thin films by engineered crystallization and acid treatment

Abstract: We present a structural engineered air-stable conducting polymer with high electrical conductivity and carrier mobility.

Cited by 189 publications

References 53 publications

Controlled formation of Schottky diodes on n-doped ZnO layers by deposition of p-conductive polymer layers with oxidative chemical vapor deposition

Controlled formation of Schottky diodes on n-doped ZnO layers by deposition of p-conductive polymer layers with oxidative chemical vapor deposition

Device Fabrication Based on Oxidative Chemical Vapor Deposition (oCVD) Synthesis of Conducting Polymers and Related Conjugated Organic Materials

Printed Flexible Organic Transistors with Tunable Aspect Ratios

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