Controlled formation of Schottky diodes on n-doped ZnO layers by deposition of p-conductive polymer layers with oxidative chemical vapor deposition

Abstract

We report the controlled formation of organic/inorganic Schottky diodes by depositing poly(3,4ethylenedioxythiophene) (PEDOT) on n-doped ZnO layers using oxidative chemical vapor deposition (oCVD). Current-voltage measurements reveal the formation of Schottky diodes that show good thermal and temporal stability with rectification ratios of 10 7 and ideality factors of ∼1.2. In the frame of a Schottky model, we identify a mean barrier height at the hybrid inorganic-organic interface of 1.28 eV, which is consistent with the difference between the work function of PEDOT and the electron affinity of ZnO. The findings highlight the strength of oCVD to design high-quality hybrid PEDOT/ ZnO heterojunctions with possible applications in electronic and optoelectronic devices.

Optimizing the Optoelectronic Properties of Face‐On Oriented Poly(3,4‐Ethylenedioxythiophene) via Water‐Assisted Oxidative Chemical Vapor Deposition

“…PEDOT is often spin‐coated with polystyrene sulfonate (PSS) to form PEDOT:PSS, [ 8,9 ] but PEDOT thin films can also be fabricated by electropolymerization, [ 10,11 ] in situ chemical polymerization, [ 12–15 ] vapor phase polymerization (VPP), [ 16–19 ] and oxidative chemical vapor deposition (oCVD). [ 20–26 ] For PEDOT, the highest value of σ to date, 8797 ± 1178 S cm −1 , was reported by Cho et al. [ 27 ] in single‐crystal nanowires grown by VPP at 50 °C using iron chloride (FeCl 3 ) as the oxidant.…”

Ultrastable Conjugated Microporous Polymers Containing Benzobisthiadiazole and Pyrene Building Blocks for Energy Storage Applications

“…The synergism of ELDC and PC can be confirmed from the rectangle-shaped, humped CV curves of all the BBT–CMPs, even at a high scan rate of 200 mV s −1 [ 2 , 12 , 19 ]. The CV curves of all the BBT–CMPs exhibit a little deviation from the capacitive nature due to the pseudocapacitive effect [ 69 , 70 ], which is the result of fast redox reactions occurring on and near the surface of active materials during charge and discharge [ 69 , 71 ]. As shown in Figure 4 a–c, the presence of a hump/spike indicates the contribution of pseudocapacitance, which arose from the presence of various types of nitrogen and sulfur heteroatoms that enable easier accessibility of electrolytes to the electrode surface and transfer of electrons [ 72 , 73 ].…”

Advances in surface modification and functionalization for tailoring the characteristics of thin films and membranes via chemical vapor deposition techniques

“…Efforts have been made on further tuning and extension of this techniques such as using water to assist the formation of nanostructures owing to its ability to act as a proton scavenger to promote decomposition of oxidant 129 . Like other methods, process parameters can be used viable tools in order to yield structures with desirable characteristics via OCVD 130,131 . The fundamental and governing mechanisms of this technique have also been recently explained including the applications 132 .…”

“…129 Like other methods, process parameters can be used viable tools in order to yield structures with desirable characteristics via OCVD. 130,131 The fundamental and governing mechanisms of this technique have also been recently explained including the applications. 132 Overall, an expanding growth is anticipated for this techniques.…”