High electric field electroluminescence in hydrogenated amorphous silicon carbide alloys

Toyama, Toshihiko; Matsui, Tetsuyuki; Okamoto, H.; Hamakawa, Yoshihiro

doi:10.1016/s0169-4332(96)00871-9

Cited by 3 publications

(2 citation statements)

References 9 publications

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“…[7][8][9] In an electric field F, the free electron energy gain per unit time is RϭeF 2 , where is the free carrier mobility. Taking ϭ6 cm 2 /V s, 15 the field required to overcome a cooling rate of 2 eV/ps is 6ϫ10 5 V/cm.…”

Section: Discussionmentioning

confidence: 99%

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Subpicosecond hot carrier cooling in amorphous silicon

White

Cuzeau

Hulín

et al. 1998

Journal of Applied Physics

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Measurements of the cooling rate of hot carriers in amorphous silicon are made with a two-pump, one-probe technique. Pump photons at 2 eV create free carriers and pump photons at 1.42 eV heat the carriers up to 1.2 eV/pair. The experiment is simulated with a rate-equation model describing the energy transfer between a population of hot carriers and the lattice. An energy transfer rate proportional to the temperature difference is found to be consistent with the experimental data. An energy transfer rate independent of the temperature difference is inconsistent with the data. This contrasts with the situation in crystalline silicon and GaAs. The measured cooling time, 0.2 ps, is sufficient to explain the absence of avalanche effects in amorphous silicon at fields below 106 V/cm.

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Section: Discussionmentioning

confidence: 99%

“…6 Only at fields higher than 10 6 V/cm have avalanche effects recently been observed. [7][8][9] One hypothesis for such a high threshold is that the carriers lose energy faster than they can be accelerated by the electric field.…”

Section: Introductionmentioning

confidence: 99%