High-Efficient and Reliable Broad-Area Laser Diodes With a Window Structure

Morita, Takenori; Nagakura, Takehito; Torii, Kazuo; Takauji, Motoki; Maeda, Joji; Miyamoto, Masahiro; Miyajima, Hirofumi; Yoshida, Harumasa

doi:10.1109/jstqe.2013.2245103

Cited by 13 publications

(13 citation statements)

References 15 publications

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“…This is a critical issue in LDs for higher output-power operation. In order to suppress the carrier leakage, the low Al-composition layers were placed between the active layer and each guiding layer [13]. These low Al-composition layers are expected to lead the injected carriers effectively into the quantum well.…”

Section: Device Structure and Designmentioning

confidence: 99%

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Long-Term Reliability of 915-nm Broad-Area Laser Diodes Under 20-W CW Operation

Naito

Nagakura

Torii

et al. 2015

IEEE Photon. Technol. Lett.

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We report on the long-term reliable CW operation of high-power and high-efficiency 915-nm broad-area laser diodes (BA-LDs). An output power of over 20 W and a maximum power-conversion efficiency of over 65% have been marked at a heat-sink temperature of 20 ºC. Stable operations of over 5000 h have also been achieved for the 915-nm and 976-nm BA-LDs with CW output powers of 20 W, respectively. The window structure with a band gap difference of 100 meV provides the reliable operation at the high-output power range.

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Section: Device Structure and Designmentioning

confidence: 99%

“…A maximum CW output power of 19.8 W and a stable operation with over 2000 h at 15 W were achieved for the BA-LDs. The devices incorporated the window structure with a band gap difference (∆E g ) of 59 meV between the window region and the gain region [13].…”

Section: Introductionmentioning

confidence: 99%

Long-Term Reliability of 915-nm Broad-Area Laser Diodes Under 20-W CW Operation

Naito

Nagakura

Torii

et al. 2015

IEEE Photon. Technol. Lett.

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“…In this work, we report an IFVD method using bilayer dielectric capping and extended time annealing at relatively low annealing temperatures compared to the previous reports 8,11,13,16,17,[20][21][22] . SiO 2 layer was used for enhanced intermixing and Si x O 2 /SrF 2 bilayer was developed for intermixing suppression.…”

Section: Introductionmentioning

confidence: 98%

“…SiO 2 was demonstrated to enhance and suppress intermixing by varying its stoichiometry through modification of flow rates in plasma enhanced chemical vapor deposition (PECVD) systems 16 . In high power lasers, it is rare that both the less deterioration in the suppression region and large intermixing selectivity [17][18][19] . In these studies, PECVD and thermal evaporation films were employed to create IFVD-based non-absorbing windows and suppression in gain regions of InGaAs/AlGaAs QW systems.…”

Section: Introductionmentioning

confidence: 99%

IFVD-based large intermixing selectivity window process for high power laser diodes

Arslan

Şahin

Demir

et al. 2018

Semiconductor Lasers and Laser Dynamics VIII

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Catastrophic optical mirror damage (COMD) is a key issue in semiconductor lasers and it is initiated by facet heating because of optical absorption. To reduce optical absorption, the most promising method is to form non-absorbing mirror structures at the facets by obtaining larger bandgap through impurity-free vacancy disordering (IFVD). To apply an IFVD process while fabricating high-power laser diodes, intermixing window and intermixing suppression regions are needed. Increasing the bandgap difference (ΔE) between these regions improves the laser lifetime. In this report, SrF 2 (versus Si x O 2 /SrF 2 bilayer) and SiO 2 dielectric films are used to suppress and enhance the intermixing, respectively. However, defects are formed during the annealing process of single layer SrF 2 causing detrimental effects on the semiconductor laser performance. As an alternative method, Si x O 2 /S r F 2 bilayer films with a thin Si x O 2 dielectric layer is employed to obtain high epitaxial quality during annealing with small penalty on the suppression effect. We demonstrate record large ΔE of 125 meV. Broad area laser diodes were fabricated by the IFVD process. Fabricated high-power semiconductor lasers demonstrated conservation of quantum efficiency with high intermixing selectivity. The differential quantum efficiencies are 81%, 74%, 66% and 46% for as grown, bilayer protected, SrF 2 protected and QWI lasers, respectively. High power laser diodes using bilayer dielectric films outperformed single-layer based approach in terms of the fundamental operational parameters of lasers. Comparable results obtained for the as-grown and annealed bilayer protected lasers promises a novel method to fabricate high power laser diodes with superior performance and reliability.

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“…The problem of raising the power of semiconductor lasers still remains topical, which is confirmed by the numerous publications devoted to this issue [1][2][3][4][5][6]. The modern level of practical applications of semicon ductor lasers requires that, to raise their output power, it is necessary to gain an in depth understanding of the physical processes occurring in the quantum well active regions of separate confinement double hetero structures (SC DHS) with an extended waveguide at high working temperatures and pump currents.…”

Section: Introductionmentioning

confidence: 99%