High-efficiency tandem solar cells on single- and poly-crystalline substrates

Hutchby, J.A.; Timmons, Michael B.; Venkatasubramanian, R.; Sharps, Paul; Whisnant, R.A.

doi:10.1016/0927-0248(94)90117-1

Cited by 6 publications

(2 citation statements)

References 4 publications

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“…11,12 Poly-Ge thin-film transistors with Schottky source/drain contacts have been demonstrated on glass substrates, and good p-channel operation was reported. 11 Ge has been widely used in high efficiency photovoltaic devices, e.g.…”

Section: Introductionmentioning

confidence: 99%

“…Interesting device applications of such thin film stacks include polycrystalline GaAs single junction or GaAs/Ge multi-junction solar cells. 12 Furthermore, (111)oriented single crystal substrates have been used to grow vertically aligned Ge or GaAs nanowire arrays. [14][15][16] Therefore, textured poly-Ge films with (111)-preferred orientation deposited on glass or polymer sheets can be used as growth templates for assembling aligned nanowire or microwire photovoltaic devices on large-area substrates.…”

Section: Introductionmentioning

confidence: 99%

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Nucleation and growth kinetics during metal-induced layer exchange crystallization of Ge thin films at low temperatures

Hu¹,

McIntyre²

2012

Journal of Applied Physics

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Nucleation and growth kinetics during metal-induced layer exchange crystallization of Ge thin films at low temperatures

Hu¹,

McIntyre²

2012

Journal of Applied Physics

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Interface-controlled layer exchange in metal-induced crystallization of germanium thin films

Marshall¹,

McIntyre²

2010

Applied Physics Letters

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Low-temperature synthesis of polycrystalline germanium (poly-Ge) thin films is of great interest in thin-film photovoltaic and electronics applications. We demonstrate metal (Al)-induced crystallization to form poly-Ge thin films on both glass and polymer substrates at temperatures as low as 200 °C. An interfacial diffusion control layer, intentionally interposed between the Al and the underlying amorphous Ge (a-Ge) layer, is found to achieve layer exchange while suppressing uncontrolled Ge crystallization within the bilayer samples. Germanium thin films with micron-size grains and (111)-preferred orientation are prepared by controlled Ge nucleation and Ge lateral overgrowth of Al during a-Ge crystallization.

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