Growth of high quality cSiGe p-n double layers for high-efficiency solar cells

Hansson, Per‐Anders; Konuma, M.; Silier, I.; Bauser, E.; Albrecht, M.; Dorsch, W.; Strunk, H. P.

doi:10.1109/wcpec.1994.519957

Cited by 1 publication

(1 citation statement)

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“…The incorporation of Ge into heavily doped p-type poly Si causes the gate work function to be noticeably reduced, allowing both PMOS and NMOS surface channels to be realized. The capability of Si 1-x Ge x to absorb solar radiation falling in the near infrared improves the efficiency of solar cells [3]. The capability of Si 1-x Ge x to absorb solar radiation falling in the near infrared improves the efficiency of solar cells [3].…”

Section: Introductionmentioning

confidence: 99%

Pulsed Laser Deposition of Boron Doped Si₇₀Ge₃₀

2006

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The main objective of this work is to investigate the possibility of combining pulsed laser deposition (PLD) and pulsed laser annealing to realize p-type Si 1-x Ge x thin films suitable for post-processing MEMS on top of standard pre-fabricated driving electronics. The main advantage of this approach is that the substrate is kept at a CMOS backend compatible temperature throughout the deposition and thus the MEMS integration process will have no thermal impact on the underlying electronics. In addition, it is demonstrated that PLD Si 1-x Ge x has good adhesion to SiO 2 . Therefore, there is no need for a silicon nucleation in contrast to LPCVD and PECVD. Furthermore, this technique is much more economical than CVD as it does not use expensive gas precursors such as germane and silane.

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Section: Introductionmentioning

confidence: 99%