2018
DOI: 10.1038/s41560-018-0234-9
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High-efficiency small-molecule ternary solar cells with a hierarchical morphology enabled by synergizing fullerene and non-fullerene acceptors

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Cited by 574 publications
(430 citation statements)
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“…[4][5][6] Benefiting from the great efforts devoted to the design of new materials, [7][8][9][10][11][12][13] optimization of the blend morphology, [14][15][16][17][18] understanding the charge generation mechanism, [19][20][21][22][23][24][25][26] significant progress has been achieved in the last few years. [4][5][6] Benefiting from the great efforts devoted to the design of new materials, [7][8][9][10][11][12][13] optimization of the blend morphology, [14][15][16][17][18] understanding the charge generation mechanism, [19][20][21][22][23][24][25][26] significant progress has been achieved in the last few years.…”
mentioning
confidence: 99%
“…[4][5][6] Benefiting from the great efforts devoted to the design of new materials, [7][8][9][10][11][12][13] optimization of the blend morphology, [14][15][16][17][18] understanding the charge generation mechanism, [19][20][21][22][23][24][25][26] significant progress has been achieved in the last few years. [4][5][6] Benefiting from the great efforts devoted to the design of new materials, [7][8][9][10][11][12][13] optimization of the blend morphology, [14][15][16][17][18] understanding the charge generation mechanism, [19][20][21][22][23][24][25][26] significant progress has been achieved in the last few years.…”
mentioning
confidence: 99%
“…[43][44][45] The Nyquist plots weremeasured under 1sun illuminationwith an applied bias voltage of 0.8 Vint he frequency range from 2MHz to 0.5 Hz. [39,47] In the presentc ase, the device without t-BAI doping exhibits as lope of 1.87 kT/q, [48,49] indicating as trong energy loss owing to trap-assisted recombination. In the plots, the low-frequency one relatest ot he recombination resistance (R rec )a tt he interface of the perovskite/charget ransport layer (CTL), the high-frequency one concerns the charge-transfer resistance( R ct )f rom perovskite to CTL, and R s is the sheet resistance of the conductive electrode.…”
Section: Resultsmentioning
confidence: 57%
“…[46][47][48] The J-V curves of all OPVs under light intensity (P L ) varied from 2.5 to 100 mW cm −2 were measured to investigate charge dynamic process in active layers, as shown in Figure S2. Under short-circuit conditions, the J SC s of OPVs with different UD-SVA treatment are much higher than those of as-cast OPVs, which should be benefited from the efficient exciton separation and charge collection efficiency in OPVs with UD-SVA treatment.…”
Section: Resultsmentioning
confidence: 99%