High efficiency single Ag nanowire/p-GaN substrate Schottky junction-based ultraviolet light emitting diodes

Abstract

We report a high efficiency single Ag nanowire (NW)/p-GaN substrate Schottky junction-based ultraviolet light emitting diode (UV-LED). The device demonstrates deep UV free exciton electroluminescence at 362.5 nm. The dominant emission, detectable at ultralow (<1 µA) forward current, does not exhibit any shifts when the forward current is increased. External quantum efficiency (EQE) as high as 0.9% is achieved at 25 µA current at room temperature. Experiments and simulation analysis show that devices fabricated with thinner Ag NWs have higher EQE. However, for very thin Ag NWs (diameter <250 nm), this trend breaks down due to heat accumulation in the NWs. Our simple device architecture offers a potentially cost-effective scheme to fabricate high efficiency Schottky junction-based UV-LEDs.

Hybrid quadrupole plasmon induced spectrally pure ultraviolet emission from a single AgNPs@ZnO:Ga microwire based heterojunction diode

“…On further increasing the injection current beyond 5.0 mA, the m was estimated to be about 1.8, showing that radiative recombination generally made up the major part of the light emission for the light output. 40,46 Additionally, the spectral linewidth as a function of injection current was also taken into account. On increasing the injection current in the range from 0.03 to 8.0 mA, Fig.…”

Progress in ZnO Nanosensors

“…Compared with bulk materials, ZnO nanostructures exhibit many special properties, such as quantum size effect, high specific surface area and dimension limitation effect. Using the excellent characteristics of ZnO nanomaterials, various sensors, piezoelectric and photoelectric devices have been prepared [ 6 , 7 ], which are widely used in biotechnology, scientific research and industrial production. ZnO nanosensors have aroused extensive concern and researchers are working to achieve nanosensors with advantages such as low cost, high stability, high sensitivity, fast response and fast recovery [ 8 , 9 ].…”

Enhanced luminescence/photodetecting bifunctional devices based on ZnO:Ga microwire/p-Si heterojunction by incorporating Ag nanowires

“…32,33 Due to its excellent conduction characteristics, ultraviolet resonant wavelength, and high transparency, Ag nanowires (AgNWs) have been widely employed to fabricate high-performance optical and electrical structures. [34][35][36][37] In this study, p-n heterojunction composed of an individual ZnO microwire via Ga-doped (ZnO:Ga MW), and p-type Si crystal wafer has been constructed. When operated in the forwardbias regime, bright luminescence peaking at around 680 nm was achieved.…”