High Efficiency Si Solar Cells Characterization Using Impedance Spectroscopy Analysis

Braña, Alejandro F.; Forniés, E.; López, N.; García, Borja Sánchez

doi:10.1088/1742-6596/647/1/012069

Cited by 23 publications

(9 citation statements)

References 3 publications

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“…Similarly to the above mentioned oc V behavior, devices with V 2 O 5 present higher bi V than those incorporating MoO 3 , being f-V 2 O 5 the structure with the larger value. Interestingly, the obtained bi V values are similar to those of standard c-Si solar cells in which 600-750 mV are distributed between the two sides of the homojunction, suggesting that TMO/n-Si heterojunction behave similarly [21,22]. The difference here is that bi V~ 0.6-0.7 V is restricted to the Si side, indicating that the junction achieves weak inversion at zero bias.…”

Section: Tmo/n-si Heterojunction Analysissupporting

confidence: 66%

Superior performance of V2O5 as hole selective contact over other transition metal oxides in silicon heterojunction solar cells

Almora

Gerling

Voz

et al. 2017

Solar Energy Materials and Solar Cells

133

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Transition metal oxides (TMOs) have recently been proved to efficiently serve as hole-selective contacts in crystalline silicon (c-Si) heterojunction solar cells. In the present work, two TMO/c-Si heterojunctions are explored using MoO 3 (reference) and V 2 O 5 as an alternative candidate. It has been found that V 2 O 5 devices present larger (16% improvement) power conversion efficiency mainly due to their higher open-circuit voltage. While V 2 O 5 /c-Si devices with textured front surfaces exhibit larger short-circuit currents, it is also observed that flat solar cell architectures allow for passivation of the V 2 O 5 /n-Si interface, giving significant carrier lifetimes of 200 µs (equivalent to a surface recombination velocity of S eff ~140 cm s-1) as derived from impedance analysis. As a consequence, a significant open-circuit voltage of 662 mV is achieved. It is found that, at the TMO/c-Si contact, a TMO work function enhancement ΔΦ TMO occurs during the heterojunction formation with its consequent dipole layer enlargement Δ'=Δ+ΔΦ TMO. Our results provide new insights into the TMO/c-Si contact energetics, carrier transport across the interface and surface recombination allowing for further understanding of the nature of TMO/c-Si heterojunctions.

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Section: Tmo/n-si Heterojunction Analysissupporting

confidence: 66%

Superior performance of V2O5 as hole selective contact over other transition metal oxides in silicon heterojunction solar cells

Almora

Gerling

Voz

et al. 2017

Solar Energy Materials and Solar Cells

133

View full text Add to dashboard Cite

show abstract

“…However, using this characterization technique for photovoltaic devices with complex architectures, such as PSCs, presents new challenges related to the interfacial degradation [ 40 ], unusual material properties [ 39 ], and testing of the simulated data [ 41 ]. The sweep voltage scan direction, time delay, and frequency all effect the device dynamics which can then be quantitatively interpreted from the impedance spectra [ 42 ]. Therefore, to understand the evolution of hysteresis in perovskite solar cells, gain insight into charge trapping/detrapping phenomena, and optimize various components and interfaces for its stable and optimized performance, a study of the sweep voltage scan direction, time delay, and frequency-dependent impedance spectra is necessary.…”

Section: Resultsmentioning

confidence: 99%

Hysteresis Analysis of Hole-Transport-Material-Free Monolithic Perovskite Solar Cells with Carbon Counter Electrode by Current Density–Voltage and Impedance Spectra Measurements

et al. 2020

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Due to the tremendous increase in power conversion efficiency (PCE) of organic–inorganic perovskite solar cells (PSCs), this technology has attracted much attention. Despite being the fastest-growing photovoltaic technology to date, bottlenecks such as current density–voltage (J–V) hysteresis have significantly limited further development. Current density measurements performed with different sweep scan speeds exhibit hysteresis and the photovoltaic parameters extracted from the current density–voltage measurements for both scan directions become questionable. A current density–voltage measurement protocol needs to be established which can be used to achieve reproducible results and to compare devices made in different laboratories. In this work, we report a hysteresis analysis of a hole-transport-material-free (HTM-free) carbon-counter-electrode-based PSC conducted by current density–voltage and impedance spectra measurements. The effect of sweep scan direction and time delay was examined on the J–V characteristics of the device. The hysteresis was observed to be strongly sweep scan direction and time delay dependent and decreased as the delay increased. The J–V analysis conducted in the reverse sweep scan direction at a lower sweep time delay of 0.2 s revealed very large increases in the short circuit current density and the power conversion efficiency of 57.7% and 56.1%, respectively, compared with the values obtained during the forward scan under the same conditions. Impedance spectroscopy (IS) investigations were carried out and the effects of sweep scan speed, time delay, and frequency were analyzed. The hysteresis was observed to be strongly sweep scan direction, sweep time delay, and frequency dependent. The correlation between J–V and IS data is provided. The wealth of photovoltaic and impendence spectroscopic data reported in this work on the hysteresis study of the HTM-free PSC may help in establishing a current density–voltage measurement protocol, identifying components and interfaces causing the hysteresis, and modeling of PSCs, eventually benefiting device performance and long-term stability.

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“…To have a deeper insight into the mechanism of the alkali treatment on the SiNWs cell performance, impedance spectroscopy (IS) has been systematically analyzed. IS is an effective method to analyze the solar cells, in particular, using it to analyze the recombination of carriers [ 26 , 27 ]. From IS, we can extract the series resistance ( R s ) and the charge recombination resistance ( R rec ) in the cell.…”

Section: Resultsmentioning

confidence: 99%

Efficiency Enhancement Mechanism for Poly(3, 4-ethylenedioxythiophene):Poly(styrenesulfonate)/Silicon Nanowires Hybrid Solar Cells Using Alkali Treatment

et al. 2016

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The efficiency enhancement mechanism of the alkali-treated Si nanowire (SiNW) solar cells is discussed and analyzed in detail, which is important to control the useful photovoltaic process. All the results demonstrate that the photovoltaic performance enhancement of alkali-treated SiNW device steps from the formation of the good core-shell heterojunction, which consequently enhances the junction area, promotes fast separating and transporting of electron and hole pairs, and reduces the carrier surface combination. It also indicates that alkali treatment for SiNWs is a promising processing as an economical method for the formation of good core-shell SiNW/polymer heterojunction.

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High Efficiency Si Solar Cells Characterization Using Impedance Spectroscopy Analysis

Cited by 23 publications

References 3 publications

Superior performance of V2O5 as hole selective contact over other transition metal oxides in silicon heterojunction solar cells

Superior performance of V2O5 as hole selective contact over other transition metal oxides in silicon heterojunction solar cells

Hysteresis Analysis of Hole-Transport-Material-Free Monolithic Perovskite Solar Cells with Carbon Counter Electrode by Current Density–Voltage and Impedance Spectra Measurements

Efficiency Enhancement Mechanism for Poly(3, 4-ethylenedioxythiophene):Poly(styrenesulfonate)/Silicon Nanowires Hybrid Solar Cells Using Alkali Treatment

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