High-efficiency oscillations at 1940 nm and 2070 nm in diode-pumped Tm:Lu&lt;inf&gt;2&lt;/inf&gt;O&lt;inf&gt;3&lt;/inf&gt; ceramics lasers and their OPO frequency converision

Антипов, О.Л.; Novikov, A. A.; Eranov, I.D.; Kolker, D. B.

doi:10.1109/lo.2014.6886222

Cited by 3 publications

(2 citation statements)

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“…However, it shows a relatively low LIDT of 0.2 J/cm 2 (1.064 µm, 12 ns, 1 kHz) [38]. To pump frequency down-conversion devices based on ZGP and AGSe crystals, laser radiation sources emitting wavelengths between 1.5 and 2 µm are required [39,40]. The ZGP crystal, which is widely utilized, possesses remarkable properties, including a high quadratic nonlinearity coefficient of approximately 75 pm/V and a high thermal conductivity of 36 W/mK [41].…”

Section: Introductionmentioning

confidence: 99%

Barium Chalcogenide Crystals: A Review

Kostyukova,

Erushin,

Boyko

et al. 2024

Photonics

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In recent decades, new nonlinear optical materials have been actively developed to create coherent tunable light sources in the mid-infrared (mid-IR) part of the spectrum used in a variety of scientific fields. In the present review, the main attention is focused on barium chalcogenide crystals, including their linear and nonlinear optical properties, laser-induced damage threshold (LIDT), and frequency down-conversion.

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Section: Introductionmentioning

confidence: 99%

Barium Chalcogenide Crystals: A Review

Kostyukova,

Erushin,

Boyko

et al. 2024

Photonics

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“…Dielectric materials were initially used in telecommunication as base materials for the fabrication of radio frequency and microwave components such as tunable filters, amplifiers and oscillators [1][2][3][4]. Later, these materials were used as dielectric resonators for radio waves in antennas, opening up an important field in telecommunications [5].…”

Section: Introductionmentioning

confidence: 99%

Development and Characterization of Titanium Dioxide Ceramic Substrates with High Dielectric Permittivities

et al. 2020

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Titanium dioxide substrates have been synthesized by means of solid-state reactions with sintering temperatures varying from 1150 °C up to 1350 °C. X-ray diffraction and scanning electron microscopy (SEM) where employed to investigate the crystal structure, grain size and porosity of the resulting samples. The obtained ceramics are tetragonal (rutile phase) with average grain sizes varying from 2.94 µm up to 5.81 µm. The average grain size of samples increases with increasing temperature, while the porosity decreases. The effect of microstructure on the dielectric properties has been also studied. The reduction of porosity of samples significantly improves the dielectric parameters (relative dielectric permittivity and loss tangent) in comparison to those of commercial substrates, indicating that the obtained ceramic substrates could be useful in the miniaturization of telecommunication devices.

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