2020
DOI: 10.3390/ma13020386
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Development and Characterization of Titanium Dioxide Ceramic Substrates with High Dielectric Permittivities

Abstract: Titanium dioxide substrates have been synthesized by means of solid-state reactions with sintering temperatures varying from 1150 °C up to 1350 °C. X-ray diffraction and scanning electron microscopy (SEM) where employed to investigate the crystal structure, grain size and porosity of the resulting samples. The obtained ceramics are tetragonal (rutile phase) with average grain sizes varying from 2.94 µm up to 5.81 µm. The average grain size of samples increases with increasing temperature, while the porosity de… Show more

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Cited by 11 publications
(6 citation statements)
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“…Here, even if the use of substrates of larger sizes increases the efficiency of the MPA, it may cause negative effects such as interference [ 14 ]. Therefore, we kept the dimensions of each 4 different substrates constant with an optimized scale, as seen in Table 1 .…”
Section: Sub-6 Ghz Antenna Designmentioning
confidence: 99%
“…Here, even if the use of substrates of larger sizes increases the efficiency of the MPA, it may cause negative effects such as interference [ 14 ]. Therefore, we kept the dimensions of each 4 different substrates constant with an optimized scale, as seen in Table 1 .…”
Section: Sub-6 Ghz Antenna Designmentioning
confidence: 99%
“…The grains which are illustrated in inset-2 and inset-3 of Figure 1 exhibit length of 600-1500 nm and width of 60-130 nm. In general, grains are composed of collection of small crystallites 16,17 lines/cm 2 . Compared to other nanoscale materials 17,18 , the defect density of CdBr 2 films is comparable.…”
Section: Structural and Morphological Analysesmentioning
confidence: 99%
“…The dielectric constant (ε) of Cr 2 O 3 at room temperature in the wide-frequency region (100 Hz to 30 MHz, i.e., frequency-dependent) varies between 350 and 25 (i.e., the value decreases with an increase in frequency) [14]. Titanium dioxide (TiO 2 ) is another dielectric material that has been extensively investigated for the fabrication of radiofrequency and microwave components [15], and it is an n-type semiconductor, but has the potential to be a p-type in undoped form (from bulk to nano-level crystal) [16,17]. There are three normal crystal phases for TiO 2 material with different band gaps (i) brookite (3.0 to 3.6 eV), (ii) anatase (3.2 eV), and (iii) rutile (3.0 eV).…”
Section: Introductionmentioning
confidence: 99%