High efficiency MJ solar cells and TPV using SiGeSn materials

Conley, Benjamin R.; Naseem, Hameed A.; Sun, Greg; Sharps, Paul; Yu, Shui-Qing

doi:10.1109/pvsc.2012.6317814

Cited by 16 publications

(11 citation statements)

References 9 publications

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“…There is considerable interest in exploiting band gap engineering possibilities offered by the integration of III-V and IV-based materials for optoelectronic and more specifically for photovoltaic applications [ 1 , 2 , 3 ]. A successful integration of InGaP and Si has already been accomplished in the realization of dual junction solar cells by mechanical staking the different semiconductors [ 4 ].…”

Section: Introductionmentioning

confidence: 99%

Study of the Cross-Influence between III-V and IV Elements Deposited in the Same MOVPE Growth Chamber

Timò¹,

Calicchio²,

Abagnale³

et al. 2021

Materials

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We have deposited Ge, SiGe, SiGeSn, AlAs, GaAs, InGaP and InGaAs based structures in the same metalorganic vapor phase epitaxy (MOVPE) growth chamber, in order to study the effect of the cross influence between groups IV and III-V elements on the growth rate, background doping and morphology. It is shown that by adopting an innovative design of the MOVPE growth chamber and proper growth condition, the IV elements growth rate penalization due to As “carry over” can be eliminated and the background doping level in both IV and III-V semiconductors can be drastically reduced. In the temperature range 748–888 K, Ge and SiGe morphologies do not degrade when the semiconductors are grown in a III-V-contaminated MOVPE growth chamber. Critical morphology aspects have been identified for SiGeSn and III-Vs, when the MOVPE deposition takes place, respectively, in a As or Sn-contaminated MOVPE growth chamber. III-Vs morphologies are influenced by substrate type and orientation. The results are promising in view of the monolithic integration of group-IV with III-V compounds in multi-junction solar cells.

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Section: Introductionmentioning

confidence: 99%

Study of the Cross-Influence between III-V and IV Elements Deposited in the Same MOVPE Growth Chamber

Timò¹,

Calicchio²,

Abagnale³

et al. 2021

Materials

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“…GeSn is a novel material and its band gap can be adjustable over a wide range by adjusting the Sn composition . More importantly, GeSn can be compatible with Si‐based CMOS processes well, thus being widely studied in the application of Si‐based high‐efficiency light‐emitting devices …”

Section: Introductionmentioning

confidence: 99%

“…1,2 More importantly, GeSn can be compatible with Si-based CMOS processes well, thus being widely studied in the application of Si-based highefficiency light-emitting devices. 3,4 Studies have shown that the increase of Sn composition can significantly reduce the energy of Γ conduction valley than L conduction valley, and separate the heavy hole band from the light hole band, which is beneficial to the luminescent properties of Ge materials. 2,5,6 In addition, the development of chemical vapor deposition (CVD) and molecular beam epitaxy (MBE) technologies provides excellent technical support for the preparation of high performance GeSn materials.…”

Section: Introductionmentioning

confidence: 99%

Study on Ge/GeSn double heterojunction vertical cavity surface emitting laser enabled by ultra‐injection technique

Zhang

Shen

et al. 2019

Micro & Optical Tech Letters

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A Ge/GeSn/Ge double heterojunction p‐i‐n vertical cavity surface emitting laser (VCSEL) is designed in this paper. According to the principle of distributed Bragg reflection (DBR), 6 and 12 pairs of SiO2/Si layers as the DBR are prepared on the upper and lower sides of the p‐i‐n structure. The upper and lower DBRs, as the resonant cavity of the laser, replace the Fabry Perot (FP) cavity of the conventional laser. The effects of Sn component and the ultra‐injection technique on the performance of the device are introduced at the same time to realize the direct bandgap luminescence of GeSn in the case of lower Sn component. The level of ultra‐injection is adjusted by changing the thickness of the i‐layer. The relationship between the thickness of the i‐layer and the carrier distribution after energization, the illuminating power, and the threshold current density are analyzed, and the best photoelectric performance is obtained.

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“…Owing to the fact that its energy gap can be tuned between 0.8 eV and 1.4 eV and it can be grown lattice matched to Ge, SiGeSn has then been considered as an alternative promising 1 eV material [11]. The growth of SiGeSn alloys has been proposed both for MJ and thermophotovoltaic applications [12]. Furthermore, this ternary material can be used as an intermediate buffer layer to realize monolithic III-V structure on silicon substrate, paving the path for next generation low cost MJ devices [13].…”

Section: Introductionmentioning

confidence: 99%

MOVPE SiGeSn development for the next generation four junction solar cells

Timò¹,

Abagnale²,

Armani³

et al. 2018

AIP Conference Proceedings

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The Multijunction (MJ) monolithic approach is very attractive for a competitive concentrating photovoltaic (CPV) technology; it has been successfully applied for InGaP/GaInAs/Ge triple-junction structures but it is more difficult to be exploited for manufacturing 4-junction solar cells, in particular when III-V and IV elements are both used. So far, the integration of the 1 eV SiGeSn material in the lattice-matched InGaP/GaInAs/Ge triple-junction structure has required the utilization of two different growth apparatus, nearly losing the economic advantage of the monolithic architecture, owing to the related higher capital expenditure. The central technical challenge for realizing InGaP/GaInAs/SiGeSn/Ge solar cell at low cost, with an industrial approach, lies in the growth of III-V and IV elements in the same MOVPE equipment, by solving the "cross contamination" problem among the III-V elements and the IV elements. In this contribution, for the first time, the results of the investigation concerning the growth of SiGe(Sn) and III-V compounds in the same MOVPE growth chamber are presented. The epitaxial layers have been characterized by XRD, SEM, TEM, EDX, SIMS and ECV profiling. It is eventually shown that by starting from a modification of the MOVPE equipment and by setting up proper growth condition the contamination of III-V elements in IV based materials can be drastically reduced from 10 20 cm-3 to 2*10 17 cm-3 , while the contamination of IV elements in III-V compounds can be reduced from 4-5*10 17 cm-3 to 6*10 16-3*10 14 cm-3 depending on the substrate used.

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High efficiency MJ solar cells and TPV using SiGeSn materials

Cited by 16 publications

References 9 publications

Study of the Cross-Influence between III-V and IV Elements Deposited in the Same MOVPE Growth Chamber

Study of the Cross-Influence between III-V and IV Elements Deposited in the Same MOVPE Growth Chamber

Study on Ge/GeSn double heterojunction vertical cavity surface emitting laser enabled by ultra‐injection technique

MOVPE SiGeSn development for the next generation four junction solar cells

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