High-efficiency millimeter-wave GaAs/GaAlAs power HEMT's

Saunier, P.; Lee, J.W.

doi:10.1109/edl.1986.26453

Cited by 57 publications

(6 citation statements)

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“…The most rigorous approach to overcome the limitation in sheet charge concentration of single-heterojunction devices was reported by using multiple-quantum-well structures based on the AlGaAs/GaAs system resulting in current densities as high as 500 to 600 mA/mm [l], [2], leaving several quantum wells under the gate.…”

Section: Introductionmentioning

confidence: 99%

Double-side planar-doped AlGaAs/InGaAs/AlGaAs MODFET with current density of 1 A/mm

Dickmann

Daembkes

Nickel

et al. 1991

IEEE Electron Device Lett.

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AlGaAs/InGaAs/AIGaAs double-side planardoped (DSPD) pseudomorphic MODFET's of 0.3-pm gate length with both excellent dc and RF performances have been fabricated. A maximum unilateral gain cutoff frequency of fc = 170 GHz and a maximum current gain cutoff frequency of fT = 60 GHz have been achieved. The devices exhibit a maximum transconductance of 500 mS/mm and an extremely high current density of 1 A/ ".These are the highest frequencies reported so far for MODFET devices being capable of driving 1-A/mm current density. This current density is the highest ever reported with this type of layer structure.

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Section: Introductionmentioning

confidence: 99%

Double-side planar-doped AlGaAs/InGaAs/AlGaAs MODFET with current density of 1 A/mm

Dickmann

Daembkes

Nickel

et al. 1991

IEEE Electron Device Lett.

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“…The output current of an amplifier is fundamentally related to the input voltage signal by a nonlinear transconductance, g m , whose higher order terms lead to intermodulation products with frequencies close to that of the fundamental signal, thereby invading the bandwidth of the amplifier and draining its available power. , Conventional transistors have a bell-shaped g m curve as a function of V G that is attributed to several physical origins including (i) self-heating effects, (ii) increase of the dynamic source access resistance, (iii) emission of optical phonons, and (iv) contact barriers . Transistors with vertically stacked multiple quantum well channels were hypothesized to lower g m nonlinearities, , but these were not practically utilized. Innovative material approaches including the use of nitrogen-polar surfaces on gallium nitride (GaN) and source regrowth advanced the linearity figure of merit, the ratio of output third-order intermodulation intercept point (OIP3) to DC power ( P DC ), OIP3/ P DC , to 13.3 dB. − The limited transistor linearity is often addressed with circuit linearization techniques employing derivative superposition (DS) − and cancellation that can extend transistor linearity at low frequencies but become difficult to implement at high frequencies and cannot handle signals with sufficiently large power …”

mentioning

confidence: 99%

Intrinsically Linear Transistor for Millimeter-Wave Low Noise Amplifiers

et al. 2020

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Transistors are the backbone of any electronic and telecommunication system but all known transistors are intrinsically nonlinear introducing signal distortion. Here, we demonstrate a novel transistor with the best linearity achieved to date, attained by sequential turn-on of multiple channels composed of a planar top-gate and several trigate Fin field-effect transistors (FETs), using AlGaN/GaN structures. A highly linearized transconductance plateau of >6 V resulted in a record linearity figure of merit OIP3/PDC of 15.9 dB at 5 GHz and a reduced third-order intermodulation power by 400× in reference to a conventional planar device. The proposed architecture also features an exceptional performance at 30 GHz with an OIP3/PDC of ≥8.2 dB and a minimum noise figure of 2.2 dB. The device demonstrated on a scalable Si substrate paves the way for GaN low noise amplifiers (LNAs) to be utilized in telecommunication systems, and is also translatable to other material systems.

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“…The latter will, however, occur at the expense of increased impedance in the ON-state. Furthermore, mobility degradation and excesive gate leakage can exist as a result of high dopings.High Electron Mobility aansistors offer an alternative solution to these problems, especially when designed with multiple heterojunction channels [4,5]. The absence of ionized impurity effects in such systems allow drift mobilities which compare to those dictated by phonon scattering and the access, as well as, channel resistances can therefore be substantially reduced.…”

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confidence: 99%

A HEMT Monolithic Double Channel Attenuator with Broadband Characteristics and Wide Dynamic Range

Cazaux

Pavlidis

et al. 1988

18th European Microwave Conference, 1988

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ABSTIlACTDouble Channel HEMT's are used as variable resistor elements in a bridged-T attenuator with broadband characteristics (0.5-12GHz), and wide dynamic range (12-16dB). A small insertion lasm (2.8dB minimum) is obtained with the help of the heterojunction approach which results in smaller ON-channel resistances than MESFET technology. INTROD2UCTIONGaAs FET's can be used as switching or variable attenuation elements if their low field source-drain resistance is modulated by the gate voltage [1,2]. Devices of this type have demonstrated extremely high switching speed, negligible control-power dissipation, and good power handling capability.Ideal switching FET's should have characteristics of low ON-resistance for minimum insertion loss and large resistance variation for high dynamic range. Another important design parameter is the depletion capacitance [3] in the OFF state and the source-drain geometrical capacitance in the ON state. This allows shunt displacement current flow and results consequently in isolation degradation at high frequencies.To control and optimize the resistance and capacitance characteristics of MESFET's, it is necessary to increase their doping level or reduce their width respectively. The latter will, however, occur at the expense of increased impedance in the ON-state. Furthermore, mobility degradation and excesive gate leakage can exist as a result of high dopings.High Electron Mobility aansistors offer an alternative solution to these problems, especially when designed with multiple heterojunction channels [4,5]. The absence of ionized impurity effects in such systems allow drift mobilities which compare to those dictated by phonon scattering and the access, as well as, channel resistances can therefore be substantially reduced. As shown in the paper this has a direct impact on the ON/OFF resistance ratio and the attenuator's dynamic range can consequently be improved.The design of the attenuator is based on the bridged-T principle which was reported to give 3.5 to 5.0 dB insertion loss and 17.0 to 10.0 dB maximum attenuation from 1 to 10 GHz [6]. Theoretical and experimental data are presented for the HEMT attenuator element design and the monolithic bridged-T circuit. THE BRIDGED-T PRINCIPLE AND CIRCUIT OPTIMIZATIQN CONSIDERATIONSThe circuit schematic of the bridged-T attenuator is shown in Fig. 1. The attenuation is controlled by the ratio of the series (R86) and shunt (RJh) transistor channel resistances as follows:The two gate voltages V., and V2b are varied in a way which allows the Rae and R,,h control and the variation of attenuation, while maintaining good matching as imposed by the condition:Rae. x R,,h,:-Z z2(2)

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High-efficiency millimeter-wave GaAs/GaAlAs power HEMT's

Cited by 57 publications

References 1 publication

Double-side planar-doped AlGaAs/InGaAs/AlGaAs MODFET with current density of 1 A/mm

Double-side planar-doped AlGaAs/InGaAs/AlGaAs MODFET with current density of 1 A/mm

Intrinsically Linear Transistor for Millimeter-Wave Low Noise Amplifiers

A HEMT Monolithic Double Channel Attenuator with Broadband Characteristics and Wide Dynamic Range

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