High-efficiency microstructured semiconductor neutron detectors that are arrayed, dual-integrated, and stacked

High-efficiency microstructured semiconductor neutron detectors for direct 3He replacement

“…Furthermore, stacking two common thinfilm devices will not double the detection efficiency over a single device, a consequence of reaction product self-absorption. However, offset-stacking two MSNDs can double the detection efficiency, primarily due to the elimination of the neutron streaming paths in the semiconductor sidewalls [17][18][19]. MSNDs can be mass produced using inexpensive silicon VLSI processing techniques and readilyavailable 6 LiF neutron conversion material, among other conversion materials.…”

Microstructured semiconductor neutron detector (MSND)-based Helium-3 Replacement technology

“…MSNDs have previously been arranged into largearea panel arrays and stacked to successfully form highefficiency devices [6][7][8][9][10]. Furthermore, due to their small size, MSNDs can be deployed in specialty devices where their outputs can be read out individually to produce spatiallydependent responses that have shown promise for neutron energy spectroscopy [11].…”

High aspect ratio composite structures with 48.5% thermal neutron detection efficiency

“…22 A configuration consisting of back-to-back stacking of such devices has been reported to have 42% intrinsic thermal neutron efficiency operated at 3 V reverse bias. [23][24][25] Similar silicon structures were investigated at Rensselaer Polytechnic Institute. [26][27][28] The reported intrinsic thermal neutron efficiencies were 4.5% based on natural boron (19.8% 10 B isotope) and 21% when scaled to 95% enriched 10 B.…”