High-efficiency, low-leakage MOCVD-grown GaInAs/AlInAs heterojunction photodiodes for detection to 2.4μm

Distinction investigation of InGaAs photodetectors cutoff at 2.9μm

“…Many efforts have been made to extend the cutoff wavelength of the In x Ga 1-x As photodetectors from about 1.7 lm (x = 0.53, lattice matched to InP substrate) to the longer wavelength side for the importance of the short wave infrared (SWIR) band of 1-3 lm [1][2][3][4][5][6][7][8][9][10][11], which exhibiting particular spectroscopic features including strong water absorption band around 1.4, 1.9 and 2.7 lm, as well as the high contrast for earth observation from the satellite [12]. However, to our knowledge the longest cutoff wavelength of the detectors at room temperature is still around 2.6-2.7 lm [2,11], which corresponding to a lattice mismatch of about 2.2% for x $ 0.85.…”

Wavelength extended InGaAs/InAlAs/InP photodetectors using n-on-p configuration optimized for back illumination

“…The photodiodes using ternary In 0.53 Ga 0.47 As lattice matched to InP substrate with cutoff wavelength of about 1.7 lm has been widely used in optical communications where response speed is the most important trait of concern, their excellent performances have been definitely proved. Wavelength extended InGaAs photodiodes grown by using hydride vapor phase epitaxy (HVPE) [4][5][6], metalorganic vapor phase epitaxy (MOVPE) [7][8][9][10][11] or molecular beam epitaxy (MBE) [12,13] methods with different type of buffer structures have been reported, their performances have been well evaluated.…”

Wavelength extended 2.4μm heterojunction InGaAs photodiodes with InAlAs cap and linearly graded buffer layers suitable for both front and back illuminations

“…Wavelength extended InGaAs photodiodes grown by using hydride vapor phase epitaxy (HVPE) [1][2][3][4] or metalorganic vapor phase epitaxy (MOVPE) [5][6][7][8][9] methods with different type of buffer and cap layer structures have been reported, and their performances were well evaluated. Among those works, the ternary InAsP is often used as buffer and cap layer.…”

“…In MBE, set the parameters to control two group V sources simultaneity will be very difficult in spite of using gas source or solid source, regardless various demands of the photodiode structure. The wavelength extended InGaAs photodetectors on InP or GaAs substrate have been reported [5,10,11] where InAlAs is used as buffer layer. As a good substitution, the lattice constant of InAlAs could also cover those of InP to InAs.…”