Wavelength extended 2.4μm heterojunction InGaAs photodiodes with InAlAs cap and linearly graded buffer layers suitable for both front and back illuminations

Zhang, Yonggang; Yuan, Gu; Tian, Zhaobing; Li, Aizhen; Zhu, Xiangrong; Zheng, Yujun

doi:10.1016/j.infrared.2007.09.003

Cited by 35 publications

(28 citation statements)

References 13 publications

(13 reference statements)

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“…It means that the performance of the detectors can benefit from slightly higher doping in the absorption layer, especially for detectors mostly working at lower bias (or zero bias) conditions and higher temperature region. However, higher carrier concentration in the InGaAs absorption layer will decrease the depletion layer thickness, and therefore the quantum efficiency of the PDs (Tian et al 2008a(Tian et al , 2008c. Notice that signal/noise ratio related detectivity, which is a figure of merit of the PDs, is decided by both R 0 A and the quantum efficiency; therefore a tradeoff of the doping level in the absorption layer should be taken to optimize the performance.…”

Section: Homostructure Pdsmentioning

confidence: 99%

“…However, if the absorption layer is too thin, the full absorption of the illuminating light becomes impossible. Through the tradeoff of the absorption layer thickness in conjunction with the doping level the situation can be improved (Tian et al 2008a(Tian et al , 2008c, but the optimization still be quite difficult. In certain array applications including earth observation the quantum efficiency or sensitivity are the most important trait of concern.…”

Section: N On P Configurationmentioning

confidence: 99%

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Gas Source MBE Grown Wavelength Extending InGaAs Photodetectors

Zhang¹,

Gu²

2011

Advances in Photodiodes

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Section: Homostructure Pdsmentioning

confidence: 99%

Section: N On P Configurationmentioning

confidence: 99%

Gas Source MBE Grown Wavelength Extending InGaAs Photodetectors

Zhang¹,

Gu²

2011

Advances in Photodiodes

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“…Particularly, high indium content In x Ga 1−x As (x = 0.82) detectors with a cut-off wavelength of more than 2 µm applied in aerospace imaging (such as earth observation, remote sensing and environmental monitoring, etc.) and spectroscopy attract more interest [12]. InP and GaAs substrates have been commonly used for the growth of In x Ga 1−x As films [13][14][15].…”

Section: Introductionmentioning

confidence: 99%

“…So, in order to obtain So, in order to obtain high quality In0.82Ga0.18As/InP (100) structures, the lattice defect formation due to misfit remains a major problem that needs to be solved. The insertion of buffer layers (with the same composition as the epitaxial layer or graded buffer layers for relevant components with epitaxial layers) [12,17,18] between the substrate and the epitaxial layer is a common and critical approach used to improve the quality of epitaxial layers. However, there is little research done on the buffer layer associated with the substrate material, especially for InxGa1−xAs/InP heterostructures.…”

Section: Introductionmentioning

confidence: 99%

Effects of In0.82Ga0.18As/InP Double Buffers Design on the Microstructure of the In0.82G0.18As/InP Heterostructure

et al. 2017

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Abstract:In order to reduce the dislocation density and improve the performance of high indium content In 0.82 Ga 0.18 As films, the design of double buffer layers has been introduced into the In 0.82 Ga 0.18 As/InP heterostructure. Compared with other buffer layer structures, we introduce an InP thin layer, which is the same as the substrate, into the In 0.82 Ga 0.18 As/InP heterostructure. The epitaxial layers and buffer layers were grown by the low-pressure metalorganic chemical vapor deposition (LP-MOCVD) method. In this study, the surface morphology and microstructures of the heterostructure were investigated by SEM, AFM, XRD and TEM. The residual strains of the In 0.82 Ga 0.18 As epitaxial layer in different samples were studied by Raman spectroscopy. The residual strain of the In 0.82 Ga 0.18 As epitaxial layer was decreased by designing double buffer layers which included an InP layer; as a result, dislocations in the epitaxial layer were effectively suppressed since the dislocation density was notably reduced. Moreover, the performance of In 0.82 Ga 0.18 As films was investigated using the Hall test, and the results are in line with our expectations. By comparing different buffer layer structures, we explained the mechanism of dislocation density reduction by using double buffer layers, which included a thin InP layer.

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“…1 Because it offers a wide, direct band gap, high carrier mobility, and high reliability, [2][3][4] it is widely used in infrared detectors, [5][6][7] solar cells, 8 and transistors. [9][10][11] In recent years, III-V compound films have often been produced using epitaxial growth, 12,13 with techniques such as metalorganic chemical vapor deposition (MOCVD or MOVPE) [14][15][16][17] and molecular beam epitaxy (MBE).…”

Section: Introductionmentioning

confidence: 99%

Synthesizing InxGa1−xAs using molten In and GaAs by the sessile drop method at 400–600 °C

Zhao

Ding

et al. 2017

AIP Advances

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We studied the surface reaction between metallic In and a single-crystal GaAs substrate at 400–600 °C induced by the improved sessile drop method. Studying the surface morphology and microstructure using scanning electron microscopy, we found that many large particles had formed on the GaAs substrate, indicating a violent reaction between the In and GaAs. This reaction became more violent with increasing temperature. Characterizing the generated phases by X-ray diffraction and transmission electron microscopy, we identified the particles as InxGa1−xAs compounds. Our results show that indium (In) reacted with single-crystal GaAs through this method to form InxGa1−xAs compounds. Moreover, during the synthesis of InxGa1−xAs by the sessile drop method, the molten In and GaAs exhibited wettability at 400–600 °C. This experiment lays the foundation for synthesizing InxGa1−xAs compounds only using the metal In and GaAs substrate by a simple method.

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Wavelength extended 2.4μm heterojunction InGaAs photodiodes with InAlAs cap and linearly graded buffer layers suitable for both front and back illuminations

Cited by 35 publications

References 13 publications

Gas Source MBE Grown Wavelength Extending InGaAs Photodetectors

Gas Source MBE Grown Wavelength Extending InGaAs Photodetectors

Effects of In0.82Ga0.18As/InP Double Buffers Design on the Microstructure of the In0.82G0.18As/InP Heterostructure

Synthesizing InxGa1−xAs using molten In and GaAs by the sessile drop method at 400–600 °C

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