High efficiency, low adjacent channel leakage 2-V operation GaAs power MESFET amplifier for 1.9-GHz digital cordless phone system

Single‐voltage‐supply operation of Ga0.51In0.49P/AlGaAS/IN0.15Ga0.85As PHEMTS with high‐power density

“…Single-voltage-supply-operated field-effect transistors (FETs) have recently been studied extensively [1][2][3][4][5][6]. To achieve singlevoltage-supply operation, enhancement-mode GaAs MESFETs and AlGaAs/InGaAs HFETs have been developed and reported [1][2][3][4][5][6].…”

“…To achieve singlevoltage-supply operation, enhancement-mode GaAs MESFETs and AlGaAs/InGaAs HFETs have been developed and reported [1][2][3][4][5][6]. Most of the previously reported single-voltage-supply operated devices were biased for class AB or class B operation with emphasis on high power-added efficiency (PAE).…”

“…However, they require increased processing power and are therefore difficult to implement in real-time systems, especially in broadband mm-wave systems due to the envisaged high bit rates. In this paper, we propose a novel DOA estimation algorithm for switched-beam array antennas based on power measurements, similar to the mono-pulse technique employed in radar systems [3], which avoids employing signal processing techniques [4]. A switched-beam array antenna is the simplest implementation of smart-antenna systems, which are usually the first option to be considered in actual commercial wireless systems.…”

A 1.2-V Operation Power Pseudomorphic High Electron Mobility Transistor for Personal Handy Phone Handset Application

“…GaAs based devices such as metal-semiconductor field-effect transistors (MESFET's) 1,2) and pseudomorphic high electron mobility transistors (PHEMT's) 3,4) and heterojunction bipolar transistors (HBT's) 5,6) with outstanding performance have been demonstrated for digital wireless communication applications. Recently, 1.9 GHz Japanese personal handy phone system (PHS) [7][8][9][10][11][12] has been introduced to more than 10 countries due to its capability for both voice and data communication. The PHS handsets require the power devices have low operating voltage, high power added efficiency (PAE) and low adjacent channel leakage power (P adj ) in order to carry high bit rate voice and data communication and to decrease the number of the battery cells used to make the handset smaller and lighter.…”

A 1.2-volt operation power PHEMT for personal handy phone handset application

“…GaAs based devices such as metal-semiconductor field-effect transistors (MESFET's) [1][2] and heterojuction field-effect transistors (HFET's) [3][4] with outstanding performance have been demonstrated for wireless communication applications. Recently, 1.9-GHz Japanese PHS system [5][6][7][8] has been introduced to more than 10 countries due to its capability for both voice and data communication. The PHS handsets require the power devices have low operating voltage, high power added efficiency and low adjacent channel leakage power in order for high bit rate voice and data communication.…”