“… Figure 7 Operational mechanism and EL performance for UEMLs-based OLEDs Operational mechanism (A) and J–V (on the left) and current efficiency-luminance ( CE–L ) (on the right) characteristics curves (B) of UEMLs-based inverted OLEDs. Reproduced with permission ( Shi et al., 2014 ), Copyright, Elsevier. …”
Section: Oleds With Uemls Inserted Into Nonluminous Materialsmentioning
confidence: 99%
“…(2019) Ir(ppy) 2 (acac)mCP:B3PYMPM/Ir(ppy) 2 (acac) mCP:B3PYMPM/Ir(ppy) 2 (acac) – – 23.2 – Phosphorescent UEML inserted in heterojunction interface without exciplex formation Zhao et al. (2013a) TCTA/FIrpic/TmPyPB 37.0 43.0 17.1 22,000 TCTA/(ppy) 2 Ir(acac)/TmPyPB 77.5 83.0 20.9 48,000 TCTA/(fbi) 2 Ir acac)/TmPyPB 47.5 51.0 17.3 38,000 TCTA/(MDQ) 2 Ir(acac)/TmPyPB 29.8 32.0 19.2 30,000 Shi et al. (2014) Ir(tfmppy) 2 (tpip)/TPBi/mCP/Ir(tfmppy) 2 tpip) 126.3 – – – Liao et al.…”
“… Figure 7 Operational mechanism and EL performance for UEMLs-based OLEDs Operational mechanism (A) and J–V (on the left) and current efficiency-luminance ( CE–L ) (on the right) characteristics curves (B) of UEMLs-based inverted OLEDs. Reproduced with permission ( Shi et al., 2014 ), Copyright, Elsevier. …”
Section: Oleds With Uemls Inserted Into Nonluminous Materialsmentioning
confidence: 99%
“…(2019) Ir(ppy) 2 (acac)mCP:B3PYMPM/Ir(ppy) 2 (acac) mCP:B3PYMPM/Ir(ppy) 2 (acac) – – 23.2 – Phosphorescent UEML inserted in heterojunction interface without exciplex formation Zhao et al. (2013a) TCTA/FIrpic/TmPyPB 37.0 43.0 17.1 22,000 TCTA/(ppy) 2 Ir(acac)/TmPyPB 77.5 83.0 20.9 48,000 TCTA/(fbi) 2 Ir acac)/TmPyPB 47.5 51.0 17.3 38,000 TCTA/(MDQ) 2 Ir(acac)/TmPyPB 29.8 32.0 19.2 30,000 Shi et al. (2014) Ir(tfmppy) 2 (tpip)/TPBi/mCP/Ir(tfmppy) 2 tpip) 126.3 – – – Liao et al.…”
“…For example, Shi et al employed a dual nondoped UEML separated by a special bilayer structure in green top‐emitting PhOLEDs, possessing a better charge carrier balance and an improved efficiency. As a result, the top‐emitting device exhibits a high current efficiency (CE) of 125.0 cd A −1 . Zhang et al manufactured high‐efficiency PhOLEDs by effectively locating the nondoped UEML away from the high‐concentration exciton formation region and the resulting green PhOLEDs exhibit a maximum external quantum efficiency (EQE) of 25.5% with a CE of 98.0 cd A −1 .…”
Phosphorescent organic light‐emitting diodes (PhOLEDs) with ultrathin emissive layer (UEML) structure have great potential in solid‐state lighting and display applications due to their relatively simple fabrication process. In this paper, the effect of doped UEML architecture on the performance of orange PhOLEDs is systematically investigated and highly efficient and long‐lifetime devices with the doped UEML structures are successfully constructed. Through strategic exciton management, the probability of exciton recombination is significantly enhanced, while simultaneously that of exciton annihilation is greatly suppressed, along with excellent charge balance. The resulting orange PhOLEDs based on tris[2‐(2‐pyridyl) imidazole] gallium(III):bis (2‐phenylbenzothiazolato) (acetylacetonate) iridium as emitter exhibit a maximum current efficiency of 60.8 cd A−1, power efficiency of 65.8 lm W−1, and external quantum efficiency of 23.4%, respectively. In addition, the doped UEML architecture greatly extends the device operational stability with a nearly fourfold lifetime improvement (time to reduce to 50% of the initial luminance at 2300 cd m−2) over the conventional phosphorescent device with doped bulk emitting layer. This should be the best results reported so far for orange PhOLEDs, indicating the use of doped UEML structure displays great potential value in designing highly efficient and long‐lifetime PhOLEDs.
“…They are attractive as active components used in various devices due to several distinguishing features such as processability, cost-effectiveness and ease of fabrication. They have been used to fabricate a lot of condensed matter physics devices such as field effect transistors [1,2], light emitting diodes [3,4], solar cells [5,6], photodiodes [7,8] and spintronic devices [9].…”
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