2021
DOI: 10.1038/s43246-021-00203-5
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High efficiency green InP quantum dot light-emitting diodes by balancing electron and hole mobility

Abstract: The industrialization of quantum dot light-emitting diodes (QLEDs) requires the use of less hazardous cadmium-free quantum dots, among which ZnSe-based blue and InP-based green and red quantum dots have received considerable attention. In comparison, the development of InP-based green QLEDs is lagging behind. Here, we prepare green InP/ZnSe/ZnS quantum dots with a diameter of 8.6 nm. We then modify the InP quantum dot emitting layer by passivation with various alkyl diamines and zinc halides, which decreases e… Show more

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Cited by 80 publications
(47 citation statements)
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“…Finally, the EQE of the fabricated inverted InP QLEDs exceeds 7%, which is the highest EQE record currently reported based on the synthesis route. Recently, Chao et al synthesized green InP/ZnSe/ZnS QDs with a PLQY of 86% [ 24 ]. Then they modified the InP QD emitting layer by passivation with various alkyl diamines and zinc halides, and a record 16.3% EQE of green QLEDs was achieved.…”
Section: Influence Of Core/shell Structure On Performance Of Inp Qledsmentioning
confidence: 99%
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“…Finally, the EQE of the fabricated inverted InP QLEDs exceeds 7%, which is the highest EQE record currently reported based on the synthesis route. Recently, Chao et al synthesized green InP/ZnSe/ZnS QDs with a PLQY of 86% [ 24 ]. Then they modified the InP QD emitting layer by passivation with various alkyl diamines and zinc halides, and a record 16.3% EQE of green QLEDs was achieved.…”
Section: Influence Of Core/shell Structure On Performance Of Inp Qledsmentioning
confidence: 99%
“…Won et al replaced the oleic acid ligand on the surface of the quantum dots with a shorter chain length hexanoic acid (HA), and the device hole current of the short ligand QDs increases fourfold, promotes exciton recombination, and reduces Auger recombination, and the EQE of the device increases to 21.4% [ 6 ]. In 2021, a high EQE of 16.3% for InP QLEDs was obtained based on the modification of surface ligands and the ZnI 2 precursor, which is the record EQE value of green InP QLEDs up to now [ 24 ]. In this work, a shorter chain (BDA) was used to strengthen the molecular bonds between QDs and control carrier transfer at the QDs interface, and hole injection and mobility were modified; the schematic diagram of the reaction is shown in Figure 10 .…”
Section: Influence Of Core/shell Structure On Performance Of Inp Qledsmentioning
confidence: 99%
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