High-efficiency GaAs lo-hi-lo IMPATT devices by liquid phase epitaxy for <i>X</i> band

Goldwasser, R. E.; Rosztoczy, F.E.

doi:10.1063/1.1655294

Cited by 40 publications

(3 citation statements)

References 2 publications

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“…It can be seen from (1) that this equation is free from diffusion current. Equations (2) include the diffusion current, have been obtained through a perturbation approach. Various orders of perturbation corrections due to carrier diffusion on the unperturbed resistance R, and reactance X , ((1)) can be obtained by progressively solving (2) for i = 1,2,3, .…”

Section: Methods Of Analysismentioning

confidence: 99%

Computer analysis of negative resistance profiles in silicon double drift diodes including the carrier diffusion effect

Dash

Pati

1991

Phys. Stat. Sol. (a)

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Computer aided numerical study on the negative resistance profiles in the depletion region of silicon flat, high‐low and low‐high‐low double drift diodes designed to operate in V and F bands is carried out through an accurate and realistic simulation programme and the mm‐wave properties of the diodes at several values of bias current are investigated. The negative resistance profile in each case is determined separately for drift current and for carrier diffusion current. The results of the analysis provide a clean insight regarding the role of diffusion current on the device characteristics of various double drift diodes and indicate that carrier diffusion current would remain as a favourable physical parameter for IMPATT operations upto certain critical frequency.

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Section: Methods Of Analysismentioning

confidence: 99%

Computer analysis of negative resistance profiles in silicon double drift diodes including the carrier diffusion effect

Dash

Pati

1991

Phys. Stat. Sol. (a)

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“…Initially, the thickness of the n-type active region (H n ) for each diode type was determined using an empirical relation based on the saturation drift velocity of electrons (v sn ) in the base semiconductor (GaN) and the design frequency (f d ) (H n = 0.37v sn /f d [32]). The diodes were meticulously designed to maintain quasi-Read doping profiles, ensuring a narrow width for the avalanche layer, which greatly enhances their high-frequency performance and reduces noise levels [33,34]. The doping profiles for IMPATT-1, IMPATT-2, and IMPATT-3 follow specific concentration patterns, such as low-high-low (lo-hi-lo), highlow (hi-lo), and high-low-high-low (hi-lo-hi-lo) respectively.…”

Section: Structures Design and Fabrication Possibilitiesmentioning

confidence: 99%

Edge-Terminated AlGaN/GaN/AlGaN Multi-Quantum Well Impact Avalanche Transit Time Sources for Terahertz Wave Generation

Ghosh,

Deb,

Acharyya

et al. 2024

Nanomaterials

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In our pursuit of high-power terahertz (THz) wave generation, we propose innovative edge-terminated single-drift region (SDR) multi-quantum well (MQW) impact avalanche transit time (IMPATT) structures based on the AlxGa1−xN/GaN/AlxGa1−xN material system, with a fixed aluminum mole fraction of x = 0.3. Two distinct MQW diode configurations, namely p+-n junction-based and Schottky barrier diode structures, were investigated for their THz potential. To enhance reverse breakdown characteristics, we propose employing mesa etching and nitrogen ion implantation for edge termination, mitigating issues related to premature and soft breakdown. The THz performance is comprehensively evaluated through steady-state and high-frequency characterizations using a self-consistent quantum drift-diffusion (SCQDD) model. Our proposed Al0.3Ga0.7N/GaN/Al0.3Ga0.7N MQW diodes, as well as GaN-based single-drift region (SDR) and 3C-SiC/Si/3C-SiC MQW-based double-drift region (DDR) IMPATT diodes, are simulated. The Schottky barrier in the proposed diodes significantly reduces device series resistance, enhancing peak continuous wave power output to approximately 300 mW and DC to THz conversion efficiency to nearly 13% at 1.0 THz. Noise performance analysis reveals that MQW structures within the avalanche zone mitigate noise and improve overall performance. Benchmarking against state-of-the-art THz sources establishes the superiority of our proposed THz sources, highlighting their potential for advancing THz technology and its applications.

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“…As in the case of varactors, the Si devices are usually p-n junctions whereas the GaAs ones use Schottky barriers. At the lower microwave frequencies, GaAs devices exhibit the highest efficiencies, up to 36% in the 8-12 GHz band (Goldwasser and Rosztoczy 1974) with low continuous power output. Reported efficiencies fall rapidly, 24% being observed at 12-14 GHz (Kim et a1 1973).…”

Section: Impatt Diodesmentioning

confidence: 99%

Microwave semiconductors devices

Sitch

1985

Rep. Prog. Phys.

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The field of microwave semiconductor devices has expanded greatly in recent years, both in tHe functions that may be performed and the range of devices available for any function. Detector and mixer diodes have been available for many years, but the period of rapid growth began with the introduction of two terminal negative differential resistance diodes in the late 1950s and 1960s. The upper frequency limits of transistor operation have also marched steadily upwards, with millimetre-wave (above 30 GHz) operation being achieved in many laboratories before 1980.The stringent demands of microwave applications have made the field of microwave semiconductors a forcing house for the industry. Microwave requirements lead to fine geometries, accurately controlled doping and the use of different materials to perform different functions, sometimes within the same device. On the other hand, microwave monolithic integrated circuits are not very complex or, as yet, highly developed, most microwave integrated circuits'being of hybrid construction (discrete devices mounted in a passive circuit).The highest operating frequencies are achieved by the simplest devices ; mixer and detector diodes can work at over 1 THz, negative resistance diodes at a few hundred GHz, while transistors are limited to under 100 GHz at present. Future developments will exploit the properties of heterostructures in which different parts of the device are made from different semiconductor materials.The aim of this review is to provide an introduction for those new to microwave semiconductors and an update for those who have not been closely involved for some time. Following the introduction is a section on carrier transport, which is a topic of great importance in the understanding of device operation. The individual families of devices are discussed in the succeeding sections, starting with varistor and varactor diodes in which the variation of resistance or reactance is the important feature. The next section introduces transit-time phenomena and the devices designed to take advantage of them. Transit-time semiconductor devices are not widely used outside the microwave bands whereas transistors, the subjects of the next two sections, are used in virtually every electronic assembly. The appendix serves to briefly describe fabrication technology, which has a great influence on the performance and cost of microwave semiconductor devices.

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High-efficiency GaAs lo-hi-lo IMPATT devices by liquid phase epitaxy for X band

Cited by 40 publications

References 2 publications

Computer analysis of negative resistance profiles in silicon double drift diodes including the carrier diffusion effect

Computer analysis of negative resistance profiles in silicon double drift diodes including the carrier diffusion effect

Edge-Terminated AlGaN/GaN/AlGaN Multi-Quantum Well Impact Avalanche Transit Time Sources for Terahertz Wave Generation

Microwave semiconductors devices

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