Computer analysis of negative resistance profiles in silicon double drift diodes including the carrier diffusion effect

Abstract

Computer aided numerical study on the negative resistance profiles in the depletion region of silicon flat, high‐low and low‐high‐low double drift diodes designed to operate in V and F bands is carried out through an accurate and realistic simulation programme and the mm‐wave properties of the diodes at several values of bias current are investigated. The negative resistance profile in each case is determined separately for drift current and for carrier diffusion current. The results of the analysis provide a clean insight regarding the role of diffusion current on the device characteristics of various double drift diodes and indicate that carrier diffusion current would remain as a favourable physical parameter for IMPATT operations upto certain critical frequency.

Prospects of 6H-SiC for operation as an IMPATT diode at 140 GHz

“…In this paper, the authors have reported the results of 6H-SiC-based double drift region (DDR) IMPATT diode performance with respect to dc and microwave power as well as noise characteristics and have compared the results obtained with those of Si-and GaAsbased IMPATT diodes under similar operating conditions at the D-band. It has been reported earlier that the device efficiency and power output from a flat profile IMPATT diode at very high frequencies of operation can be compensated through the use of a modified doping profile for the diode (high-low and lowhigh-low type) [7]. Hence the authors have made an attempt to assess the performance of high-low and low-high-low SiCbased IMPATT diodes and the results have been compared with those of a SiC flat doping profile IMPATT diode.…”

Effect of Current Density on the Series Resistance of SDR (n+np+) Silicon IMPATT Diode in the X Band

“…Following the Gummel and Blue approach in the small signal condition with the dc data as input parameters and applying the appropriate boundary conditions at the two edges of the depletion region, the diode negative resistivity R and the reactivity X at every space point of the depletion region have been solved by the following differential equations [10,11]:…”