High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy

Lu, Shulong; Ji, Lian; He, Wei; Dai, Pengcheng; Yang, Hui; Arimochi, Masayuki; Yoshida, Hiroshi; Uchida, Shiro; Ikeda, Masao

doi:10.1186/1556-276x-6-576

Cited by 36 publications

(16 citation statements)

References 8 publications

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“…Molecular beam epitaxy (MBE) has the potential to grow high quality InGaAsP materials, because it proceeds under an ultra-high vacuum condition and uses ultra-high purity metal sources. [29,30] In this work, a room-temperature wafer-bonded triple-junction solar cell was grown by all-solid state MBE. We investigated the surface and interfacial properties of triple-junction solar cells by using scanning transmission electron microscopy (STEM) and optical microscope.…”

Section: Introductionmentioning

confidence: 99%

Investigation of room-temperature wafer bonded GaInP/GaAs/InGaAsP triple-junction solar cells

Yang

Dai

et al. 2016

Applied Surface Science

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We report on the fabrication of III-V compound semiconductor multi-junction solar cells using the room-temperature wafer bonding technique. GaInP/GaAs dual-junction solar cells on GaAs substrate and InGaAsP single junction solar cell on InP substrate were separately grown by all-solid state molecular beam epitaxy (MBE). The two cells were then bonded to a triple-junction solar cell at room-temperature. A conversion efficiency of 30.3% of GaInP/GaAs/InGaAsP wafer-bonded solar cell was obtained at 1-sun condition under the AM1.5G solar simulator. The result suggests that the room-temperature wafer bonding technique and MBE technique have a great potential to improve the performance of multi-junction solar cell.

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Section: Introductionmentioning

confidence: 99%

Investigation of room-temperature wafer bonded GaInP/GaAs/InGaAsP triple-junction solar cells

Yang

Dai

et al. 2016

Applied Surface Science

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“…The total photocurrent was lower than our previously reported value. [31,32] To prevent the antireflection coating from influencing the electron irradiation effect, the antireflection layer was not deposited on the ITO film. However, the radiation resistance of the GaInP solar cell with the ITO electrode was equivalent to that with the metal electrodes.…”

Section: Resultsmentioning

confidence: 99%

Indium Tin Oxide with High Carrier‐Collection Capacity and Radiation Resistance for GaInP Solar Cell

Dai

Long

Sun

et al. 2021

Physica Status Solidi (a)

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The crystal structure, light transmittance, and contact resistivity of transparent conducting indium-tin-oxide (ITO) films for a III-V solar cell are studied. The optical transparency of ITO can reach 96% under appropriate annealing conditions. ITO and n þ -GaAs can form Ohmic contacts having a lower contact resistance than those formed with ITO and n þ -GaInP. A specially designed solar cell structure is fabricated to grow the ITO film as the front electrode and thus prevent oxidation of the AlInP window layer. Three different GaInP solar cells with pure ITO and ITO/metal grid electrode structures are designed and compared. The results indicate that the ITO electrode has good carrier-collection ability. After irradiation with 1 MeV energy electrons with an electron fluence of 1 Â 10 15 e cm À2 , the remaining factor of the GaInP solar cells with a pure ITO electrode is %98%. The results indicate that ITO films have significant application potential in space solar cell manufacturing.

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“…The liquid optically clear adhesive, which was used as a reagent to glue the components in the LSCs, was purchased from 3M (Saint Paul, MN, USA). Gallium arsenide (GaAs) solar cells were fabricated using a molecular beam epitaxy system according to the literature 53 . The dimensions of the GaAs solar cells were 1–12 in.…”

Section: Methodsmentioning

confidence: 99%

High‐performance hybrid luminescent‐scattering solar concentrators based on a luminescent conjugated polymer

Sun

Zhang

et al. 2021

Polymer International

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Luminescent solar concentrators (LSCs) are considered a promising building‐integrated photovoltaic technology. Over the past decade, numerous luminophores have been developed for LSCs. However, conjugated polymers are rarely reported for LSCs despite their wide application in other fields. In this study, we investigated a luminescent conjugated polymer, poly(naphthalene‐alt‐vinylene) (PNV), for LSCs. PNV exhibits an absorption wavelength (λabs) of 535 nm, an emission wavelength (λem) of 632 nm and a photoluminescence quantum yield of 0.40 in a poly(methyl methacrylate) matrix. When tested under outdoor direct sunlight (1000 W m−2 ± 10%) and indoor diffuse light‐emitting diode (LED) light (10 W m−2 ± 10%), the PNV‐based LSCs with a size of 12 in. (30.48 cm) exhibited power conversion efficiencies (ηLSC) of up to 2.9% and 3.6%, respectively, and concentration ratios (C) of up to 1.49 and 3.53, respectively. The external quantum efficiencies of the LSCs and the edge emission spectra of the luminescent waveguides were analyzed to reveal the impact of surface scattering treatment on device performance. Monte Carlo ray‐tracing simulation was employed to project the performance of large‐area LSCs with sizes of up to 120 in. (304.8 cm). For the LSCs under outdoor direct sunlight and indoor diffuse LED light, the projected ηLSC values were 1.29% and 0.88%, respectively, and the projected C values were 6.73 and 8.62, respectively. This study suggests that high‐performance LSCs can be achieved through luminescent conjugated polymers. © 2021 Society of Chemical Industry

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High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy

Cited by 36 publications

References 8 publications

Investigation of room-temperature wafer bonded GaInP/GaAs/InGaAsP triple-junction solar cells

Investigation of room-temperature wafer bonded GaInP/GaAs/InGaAsP triple-junction solar cells

Indium Tin Oxide with High Carrier‐Collection Capacity and Radiation Resistance for GaInP Solar Cell

High‐performance hybrid luminescent‐scattering solar concentrators based on a luminescent conjugated polymer

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