Indium Tin Oxide with High Carrier‐Collection Capacity and Radiation Resistance for GaInP Solar Cell

Dai, Pengcheng; Long, Junhua; Sun, Qin; Wu, Yuanyuan; Tan, Minghong; Lu, Shulong

doi:10.1002/pssa.202000804

Cited by 3 publications

(3 citation statements)

References 29 publications

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“…In the literature, several articles were reported based on the study of the shielding properties of indiumcontaining oxide and non-oxide glasses [14][15][16][17][18][19][20][21][22][23][24] but no report of indium-containing non-oxide chalcogenide glasses was found. Dai et al observed the high collection carrier capacity of indium tin oxide (ITO) film by irradiating it with 1 MeV energy and suggested that ITO film can be applied in the manufacturing of space solar cells [14]. The shielding properties of indium oxide glass for electromagnetic interference (EMI) applications were studied by Asbalter et al [15].…”

Section: Introductionmentioning

confidence: 99%

Radiation shielding competence of SeTeSnIn chalcogenide glassy system: resistance against gamma irradiation

Saraswat,

Pal,

Khattari

et al. 2024

Phys. Scr.

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This paper reports the study of the high-energy radiation shielding characteristics of the STS glassy system. Further, the work investigates the effect of indium concentration on the high energy radiation shielding characteristics of the STS glassy system. For this purpose, a glassy Se78-xTe20Sn2Inx (x = 0, 2, 4, and 6) system was synthesized using a renowned melt quench technique whose density was measured through the Archimedes method. We have utilized an online platform, i.e., Phy-X/PSD software, to measure the different radiation shielding parameters of the SeTeSnIn glassy system. Several shielding parameters such as linear and mass attenuation coefficient, half value layer (HVL), mean free path (MFP), effective atomic number (Zeff), effective electron density (Neff), effective conductivity (Ceff), equivalent atomic number (Zeq), energy absorption build-up factor (EABF), exposure build-up factor EBF), and fast neutron removal cross-section (FNRCS) have been measured in the energy range of 15 keV to 15 MeV.

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Section: Introductionmentioning

confidence: 99%

Radiation shielding competence of SeTeSnIn chalcogenide glassy system: resistance against gamma irradiation

Saraswat,

Pal,

Khattari

et al. 2024

Phys. Scr.

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“…ITO film also has good electrical conductivity and can be used as an ohmic contact [5]. Beside, ITO electrode has a strong capacity for carrier collection [6]. The dielectric chosen is Al2O3 has outstanding stability, high dielectric strength, resilience under harsh conditions and high transparency [7,8].…”

Section: Introductionmentioning

confidence: 99%

Ray Tracer Simulation of Si-Based Solar Cells using Al2O3/ITO as Double Layers Anti Reflective Coating

Hamdan,

Yusof,

Yusoff

2023

Trends Sci

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The solar cell has become one of the options for a greener world. Various studies have been done to achieve a solar cell with high efficiency and reasonable price. This study’s objective is to investigate how the thickness and base angle of the front layer affect the optical and electrical characteristics of Si-Based Solar cells. To accomplish this study, heterojunction solar cells using Al2O3/ITO as the double layer anti-reflection coating are analyzed using the Wafer Ray Tracer simulation by the PV Lighthouse. Al2O3 and ITO layers are used as a double anti-reflection coating (DLARC) in the light trapping strategy to support the reflection, absorption, and transmission (R, A and T) of the silicon solar cell. It acts to minimize reflectance and improves the overall efficiency of the solar cell. DLARC variation focuses on increasing absorption while decreasing reflection and transmission. The high refractive index of the hydrogenated a-Si (a-Si: H) emitter layer generates excessive reflection losses in SHJ solar cells making the silicon wafer have a low absorption efficiency. The DLARC thickness and base angle are varied as part of the simulation using the Wafer Ray Tracer by PV Lighthouse. The surface morphology of upright pyramid texture, height is 3.536 µm, texture base angle 54.74 °, and width 5 µm are used for reference scheme. Four schemes will be analyzed throughout this study along with the reference scheme. The result of this study is that Scheme 3 gives the optimum result with 99 % absorption, 21 % reflection and 67 % transmission. The goal of this study is to evaluate the impact of ARC thickness on optical and electrical characteristics. The best outcome is produced by varying the thickness and base angle of Scheme 3. The highest Jmax value, 0.3842 mA/cm2, is found in Scheme 3. HIGHLIGHTS The high refractive index of the hydrogenated a-Si (a-Si: H) emitter layer causes significant reflection losses in SHJ solar cells, resulting in a low absorption efficiency for the silicon wafer The double anti-reflection coating (DLARC) thickness and base angle are modified as part of the simulation using PV Lighthouse's Wafer Ray Tracer The best results are obtained by adjusting the thickness and base angle of Scheme 3. Scheme 3 has the highest Jmax value of 0.3842 mA/cm2 GRAPHICAL ABSTRACT

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“…Studies that explain the synthesis and characterization of various materials are very interesting for researchers to study, especially those using the basic precursor material, namely SnO2, where these materials are closely related to various technologies that support community needs, which of course will increase and develop every year . SnO2 is widely applied to electronic devices such as diodes (Lee et al, 2019), transistors (Dou et al, 2019), capacitors (Dai et al, 2021), solar cells (Mikolášek, 2017;Altinkaya et al, 2021;Luo et al, 2022), liquid crystal displays (Zhang et al, 2021;Chu et al, 2021;, gas sensors (Zhou et al, 2018;Karabulut et al, 2018), and other optoelectronic equipment (Rana et al, 2019).…”

Section: Introductionmentioning

confidence: 99%

Analysis of the Energy Band Gap of Tin Oxide Thin Layers as Semiconductor Base Materials in Electronic Devices

Doyan

Susilawati

Muliyadi³

2022

jppipa, pendidikan ipa, fisika, biologi, kimia

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The purpose of this study is to analyze the quality of optical properties such as energy band gap of thin layer of tin oxide doped with aluminum, tin oxide doped with fluorine, tin oxide doped with indium, tin oxide doped with aluminum-fluorine, tin oxide doped with aluminum-indium, and tin oxide doped with aluminum-fluorine-indium. The thin layer was synthesized using the sol-gel spin coating method. The ratio of basic ingredients and doping used in this study was 95:5% and 85:15%. The thin layer that has been formed is then heated at a temperature of 100 and 200 0C. The results of the analysis of optical properties showed that the largest values of direct and indirect energy band gap are in a thin layer of tin oxide doped with indium at a percentage of 95:5% for a temperature of 100 0C, namely 3.62 and 3.92 eV. The lowest values of direct and indirect energy band gap are in a thin layer of tin oxide doped with aluminum-fluorine-indium at a percentage of 85:15% for a temperature of 200 0C, namely 3.36 and 3.51 eV. These results indicate that the resulting energy band gap decreases with increasing doping concentration and sintering temperature. Based on the optical properties obtained, the thin layer can be used as the basic material for semiconductors in electronic devices.

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Indium Tin Oxide with High Carrier‐Collection Capacity and Radiation Resistance for GaInP Solar Cell

Cited by 3 publications

References 29 publications

Radiation shielding competence of SeTeSnIn chalcogenide glassy system: resistance against gamma irradiation

Radiation shielding competence of SeTeSnIn chalcogenide glassy system: resistance against gamma irradiation

Ray Tracer Simulation of Si-Based Solar Cells using Al2O3/ITO as Double Layers Anti Reflective Coating

Analysis of the Energy Band Gap of Tin Oxide Thin Layers as Semiconductor Base Materials in Electronic Devices

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