High Efficiency Fully Implanted and Co-annealed Bifacial N-type Solar Cells

Lanterne, Adeline; Gall, S.; Veschetti, Y.; Cabal, R.; Coig, Marianne; Milési, F.; Tauzin, A.

doi:10.1016/j.egypro.2013.07.279

Cited by 21 publications

(18 citation statements)

References 6 publications

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“…The dissolution of these defects (like dislocation loops [3] or boron interstitial clusters [4,5]) requires either a high temperature step (several 10 min above 1000°C) after implantation (e.g. [6]) or an etch-back step of the emitter surface after annealing at lower temperatures [7].…”

Section: Introductionmentioning

confidence: 99%

Ion implantation of boric molecules for silicon solar cells

Krügener

Peibst

Bugiel

et al. 2015

Solar Energy Materials and Solar Cells

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Section: Introductionmentioning

confidence: 99%

Ion implantation of boric molecules for silicon solar cells

Krügener

Peibst

Bugiel

et al. 2015

Solar Energy Materials and Solar Cells

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“…In both separated and co-annealing methods, the dopants are inserted into the cell by ion implantation and activated by subsequent thermal treatments. In these approaches, the number of process steps related to doping is reduced by 4 for the co-annealing [7] and by 3 for separated annealing, in comparison to the 11 steps needed for doping by diffusion. Using ion implantation, the steps of barrier and dopant glass removal are eliminated and the oxidation is done during the activation annealing.…”

Section: Methodsmentioning

confidence: 99%

New processes for homojunction silicon solar cells doping: From beam line to plasma immersion ion implantation

Coig

Milési

Lerat

et al. 2016

2016 16th International Workshop on Junction Technology (IWJT)

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The doping of n-type silicon solar cells was investigated using two ion implantation techniques: beam line and plasma immersion. Initially, we evaluated the benefits of beamline ion implantation in replacement of diffusion anneal doping process. Two different annealing routines were studied. The first one using a single annealing to activate both B implanted emitter and P implanted BSF, while the second one used two different annealing to separately activate each dopant. Good yield was reached with a re cord cell of 20.33% efficiency. Secondly, we investigated the doping by plasma immersion ion implantation where the final objective was the fabrication of a solar cell fully doped by plasma. BF 3 and B2R6 were compared as precursor gases for the boron emitter doping, while PR3 was used for the BSF doping. Hybrid cells were fabricated using both implantation techniques and a maximum efficiency of 19.8% was obtained. First cells fully doped by plasma shown promising results with a yield of 18.8%.

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“…Here, two ways exist to increase the thermal budget: 1) increasing the temperature or/and 2) increasing the annealing duration. So far, experimental studies were performed in quartz furnaces, implying maximum T of ß1050°C and long annealing times up to ß1 h (see [10]). Higher T, which can be achieved by using RTA, could lead to a faster dissolution of crystal defects and, thus, enables shorter process duration.…”

Section: Introductionmentioning

confidence: 99%

Electrical and Structural Analysis of Crystal Defects After High-Temperature Rapid Thermal Annealing of Highly Boron Ion-Implanted Emitters

Krügener

Peibst

Wolf

et al. 2015

IEEE J. Photovoltaics

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Ion implantation of boron is a promising technique for the preparation of p-type emitters in n-type cells. We use rapid thermal annealing with temperatures up to 1250°C and annealing durations between 6 s and 20 min to anneal the implant-induced crystal defects. Experimental J 0 e is compared with simulated and measured defect densities. Perfect dislocation loops are identified to be the dominating defect species after rapid thermal annealing (RTA) above 1000°C. Even for emitters with J 0 e values around 40 fA/cm 2 , defects are present within the valleys of the textured surfaces after annealing. On textured Al 2 O 3 -passivated boron emitters, we measure J 0 e of 38 fA/cm 2 for a sheet resistance around 80 Ω/ after very short annealing processes (1 min at 1200°C).

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High Efficiency Fully Implanted and Co-annealed Bifacial N-type Solar Cells

Cited by 21 publications

References 6 publications

Ion implantation of boric molecules for silicon solar cells

Ion implantation of boric molecules for silicon solar cells

New processes for homojunction silicon solar cells doping: From beam line to plasma immersion ion implantation

Electrical and Structural Analysis of Crystal Defects After High-Temperature Rapid Thermal Annealing of Highly Boron Ion-Implanted Emitters

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