High-Efficiency and Low-Damage Lapping Process Optimization

Abstract

The silica opticsare widely applied in the modern laser system, and its fabrication is always the research focus. In the manufacturing process, the lapping process occurs between grinding and final polishing. However, lapping processes optimizations focus on decreasing the depth of sub-surface damage (SSD) or improving lapping efficiency individually. So, the optimum balance point between efficiency and damageshould be studied further. This manuscript establishes the effective removal rate of damage (ERRD)model, and the relationship between the ERRD and processing parameters is simulated. Then, high-efficiency, low-damage lapping processing routine is established based on the simulation. The correctness and feasibility are validated. In this work, the optimized method is confirmed that it can improve efficiency and decrease damage layer depth in the lapping process which promotes the development of optics in low-damage fabrication.

Recent Advances In Silicon Carbide Chemical Mechanical Polishing Technologies

“… Illustrations of surface roughness and subsurface damage depth at the slicing, lapping, grinding and CMP steps of the SiC wafer production process [ 3 ]. …”

Effect of Parameters of Chemical Mechanical Polishing (CMP) for Improving Surface Roughness for Semiconductor Material Kind Silicon

“…It is one of the processes of the discovery of modern nanotechnology that has made real progress for business despite the enormous and early technical difficulties. The process (CMP) is widely utilized in the manufacture of merchandise semiconductors in factories [5]. To create mirrorlike surfaces without subsurface deterioration proportional to surface deterioration.…”

Fused silica with sub‐angstrom roughness and minimal surface defects polished by ultrafine nano‐CeO2

“…21,30 The laser-induced damage threshold of the fused silica is sharply reduced on account of the presence of defects on the surface and impurities (e.g., Fe and Ce) embedded in scratch and pitting. [31][32][33] However, the surface defect, submicron-sized defect in especial, with weeny size and large amount poses enormous difficulties to accurate quantitative detection, which is one of the primary reasons why submicron defects are barely studied. According to previous reasons, it is an urgent demand to explore the root cause for the generation of submicron defects as well as forecast and eliminate them from the source.…”

“…In addition, scratches and pitting on the surface are mainly result from coarser primary particles and secondary particles in CeO 2 21,30 . The laser‐induced damage threshold of the fused silica is sharply reduced on account of the presence of defects on the surface and impurities (e.g., Fe and Ce) embedded in scratch and pitting 31–33 . However, the surface defect, submicron‐sized defect in especial, with weeny size and large amount poses enormous difficulties to accurate quantitative detection, which is one of the primary reasons why submicron defects are barely studied.…”