High efficiency a-Si:H/a-Si:H solar cell with a tunnel recombination junction and a n-type μc-Si:H layer

Chang, Ping; Lu, Chun-Shien; Yeh, Chih Hung; Houng, Mau Phon

doi:10.1016/j.tsf.2011.12.083

Cited by 9 publications

(4 citation statements)

References 14 publications

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“…As for the tandem cell with the i-top thickness of 80 nm, it delivered a pronounced V oc (1.894 V), which is more competitive than those previously reported. 26) The wide-E opt absorber layer obtained by decreasing the substrate temperature and successful working of the TRJ would possibly contribute to the achievement of the high V oc . On the other hand, the efficiency is rather limited by the moderate J sc that originates from the current mismatching between the top and bottom cells, as shown in Fig.…”

Section: Effects Of the Deposition Temperature On The Absorber Proper...mentioning

confidence: 99%

Low-temperature-processed a-SiO_x:H/a-Si:H tandem cells for full spectrum solar cells

Kang

Sichanugrist

Miyajima

et al. 2015

Jpn. J. Appl. Phys.

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We developed wide-bandgap amorphous silicon (a-Si:H) and amorphous silicon oxide (a-SiOx:H) absorbers by extremely decreasing deposition temperature to as low as 100 °C. By adjusting hydrogen and carbon dioxide gas flow rates, device-quality absorbers and thus suitable single junction cells were obtained. An a-SiOx:H single-junction cell (i = 100 nm) fabricated employing the absorber we developed showed an open circuit voltage (Voc) of 1.007 V and a fill factor of 0.741, which are better than those of a-Si:H cells. This a-SiOx:H cell was introduced in a-SiOx:H/a-Si:H tandem cells as the top cell, which contributed to the achievement of a markedly high Voc of 1.910 V. This tandem cell with an efficiency of 9.25% showed better Voc and current matching property than the a-Si:H/a-Si:H (8.74%) tandem structure. The low-temperature-gradient a-SiOx:H/a-Si:H tandem cells can be a promising configuration for spectrum splitting applications.

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Section: Effects Of the Deposition Temperature On The Absorber Proper...mentioning

confidence: 99%

Low-temperature-processed a-SiO_x:H/a-Si:H tandem cells for full spectrum solar cells

Kang

Sichanugrist

Miyajima

et al. 2015

Jpn. J. Appl. Phys.

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“…Water splitting applications are particularly sensitive to the values of open‐circuit voltage ( V oc ) and fill factor ( FF ), in which TRJs play a crucial role. The junction between the a‐Si:H cell and the nc‐Si:H cell have been previously studied . However, the junction between the nc‐Si:H cell and the silicon heterojunction (SHJ) cell is relatively unexplored .…”

Section: Introductionmentioning

confidence: 99%

“…The junction between the a-Si:H cell and the nc-Si:H cell have been previously studied. [8][9][10] However, the junction between the nc-Si:H cell and the silicon heterojunction (SHJ) cell is relatively unexplored. 11,12 Moreover, in order to improve the current density of the multijunction solar cell, light management techniques need to be implemented.…”

mentioning

confidence: 99%

Designing a hybrid thin‐film/wafer silicon triple photovoltaic junction for solar water splitting

Perez‐Rodriguez

Vijselaar

Huskens

et al. 2018

Progress in Photovoltaics

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Solar fuels are a promising way to store solar energy seasonally. This paper proposes an earth‐abundant heterostructure to split water using a photovoltaic‐electrochemical device (PV‐EC). The heterostructure is based on a hybrid architecture of a thin‐film (TF) silicon tandem on top of a c‐Si wafer (W) heterojunction solar cell (a‐Si:H (TF)/nc‐Si:H (TF)/c‐Si(W)) The multijunction approach allows to reach enough photovoltage for water splitting, while maximizing the spectrum utilization. However, this unique approach also poses challenges, including the design of effective tunneling recombination junctions (TRJ) and the light management of the cell. Regarding the TRJs, the solar cell performance is improved by increasing the n‐layer doping of the middle cell. The light management can be improved by using hydrogenated indium oxide (IOH) as transparent conductive oxide (TCO). Finally, other light management techniques such as substrate texturing or absorber bandgap engineering were applied to enhance the current density. A correlation was observed between improvements in light management by conventional surface texturing and a reduced nc‐Si:H absorber material quality. The final cell developed in this work is a flat structure, using a top absorber layer consisting of a high bandgap a‐Si:H. This triple junction cell achieved a PV efficiency of 10.57%, with a fill factor of 0.60, an open‐circuit voltage of 2.03 V and a short‐circuit current density of 8.65 mA/cm2. When this cell was connected to an IrOx/Pt electrolyser, a stable solar‐to‐hydrogen (STH) efficiency of 8.3% was achieved and maintained for 10 hours.

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“…The efficient conversion of sunlight energy into chemical energy, such as the photoelectrolysis of water by semiconductor-based devices, has attracted much interest in research. − Photoelectrolysis of water follows the requirement of the electrochemical potential, which needs a photovoltage of >1.23 V (disregarding overpotentials). , Thin-film silicon solar cells have emerged as promising candidates that can generate high photovoltages above 1.6 V in water-splitting applications. , To obtain such high photovoltages with thin-film silicon solar cells, researchers have introduced advanced energy-band engineering and interface modification, such as the advanced design of window and absorber layers, optimization of band mismatch, and a contact barrier at the interface. − Because solar cells based on hydrogenated amorphous silicon (a-Si:H) have much higher photovoltages (0.9–1.0 V) than other thin-film silicon single-junction solar cells, multijunction a-Si:H solar-cell structures have high potential to generate over 1.8 V. ,− One way to increase the photovoltage above 1.0 V is to use a wide-band-gap material such as SiO x :H or SiC x :H for the absorber layer. However, the photocurrent will be limited by this absorber layer, which is not desirable for photocathodes in water-splitting applications. , Consequently, obtaining a photovoltage above 1.0 V in single-junction a-Si:H solar cells is confronted by the challenge of maximizing the built-in potential …”

Section: Introductionmentioning

confidence: 99%

Origin of Photovoltage Enhancement via Interfacial Modification with Silver Nanoparticles Embedded in an a-SiC:H p-Type Layer in a-Si:H Solar Cells

Zhang²,

Ni³

et al. 2017

ACS Appl. Mater. Interfaces

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We used silver nanoparticles (Ag-NPs) embedded in the p-type semiconductor layer of hydrogenated amorphous silicon (a-Si:H) solar cells in the Schottky barrier contact design to modify the interface between aluminum-doped ZnO (ZnO:Al, AZO) and p-type hydrogenated amorphous silicon carbide (p-a-SiC:H) without plasmonic absorption. The high work function of the Ag-NPs provided a good channel for the transport of photogenerated holes. A p-type nanocrystalline SiC:H layer was used to compensate for the real surface defects and voids on the surface of Ag-NPs to reduce recombination at the AZO/p-type layer interface, which then enhanced the photovoltage of single-junction a-Si:H solar cells to values as high as 1.01 V. The Ag-NPs were around 10 nm in diameter and thermally stable in the p-type a-SiC:H film at the solar-cell process temperature. We will also show that a wide range of photovoltages between 1.01 and 2.89 V could be obtained with single-, double-, and triple-junction solar cells based on the single-junction a-Si:H solar cells with tunable high photovoltage. These solar cells are suitable photocathodes for solar water-splitting applications.

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High efficiency a-Si:H/a-Si:H solar cell with a tunnel recombination junction and a n-type μc-Si:H layer

Cited by 9 publications

References 14 publications

Low-temperature-processed a-SiO_x:H/a-Si:H tandem cells for full spectrum solar cells

Low-temperature-processed a-SiO_x:H/a-Si:H tandem cells for full spectrum solar cells

Designing a hybrid thin‐film/wafer silicon triple photovoltaic junction for solar water splitting

Origin of Photovoltage Enhancement via Interfacial Modification with Silver Nanoparticles Embedded in an a-SiC:H p-Type Layer in a-Si:H Solar Cells

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High efficiency a-Si:H/a-Si:H solar cell with a tunnel recombination junction and a n-type μc-Si:H layer

Cited by 9 publications

References 14 publications

Low-temperature-processed a-SiOx:H/a-Si:H tandem cells for full spectrum solar cells

Low-temperature-processed a-SiOx:H/a-Si:H tandem cells for full spectrum solar cells

Designing a hybrid thin‐film/wafer silicon triple photovoltaic junction for solar water splitting

Origin of Photovoltage Enhancement via Interfacial Modification with Silver Nanoparticles Embedded in an a-SiC:H p-Type Layer in a-Si:H Solar Cells

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Low-temperature-processed a-SiO_x:H/a-Si:H tandem cells for full spectrum solar cells

Low-temperature-processed a-SiO_x:H/a-Si:H tandem cells for full spectrum solar cells