High Dynamic Range image sensor with self adapting integration time in 3D technology

Guezzi-Messaoud, Fadoua; Dupret, Antoine; Peizerat, Arnaud; Blanchard, Yves

doi:10.1109/icecs.2012.6463732

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Cited by 4 publications

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“…(2) Capturing multiple images with varying integration time and reconstruction, however this technique limits the circuit readout speed [6]. (3) Selfadjusting integration time [5]. Solutions (1-3) considerably increase the overall sensor design complexity.…”

Section: Introductionmentioning

confidence: 99%

Hybrid CMOS-OxRAM Image Sensor for Overexposure Control

Kumar

Sarkar

2016

2016 IEEE 8th International Memory Workshop (IMW)

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This paper presents a first of its kind unique application of OxRAM devices in CMOS image sensor pixels. Our proposed hybrid CMOS-OxRAM pixel circuit exploits the non-linear capacitive and resistive properties of OxRAM device to control image overexposure autonomously. HfOx based OxRAM device is used as a programmable capacitive load in a conventional 4T-APS (active pixel sensor) circuit. Our solution exploiting HfOx based OxRAM devices, improves the dynamic range of individual pixels by a factor of ∼ 2.45 (or 7.8 dB), and capacitance density by a factor of ∼5 at 180 nm node.

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Section: Introductionmentioning

confidence: 99%