2005
DOI: 10.1007/s10762-005-7605-6
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High Doping Density Schottky Diodes in the 3MM Wavelength Cryogenic Heterodyne Receiver

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Cited by 13 publications
(5 citation statements)
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“…The state− −of−the−art devices have anode diameters about 0.25 μm and capacitances 0.25 fF. For high−frequency operation, the GaAs layers are doped up to n »(5-10)×10 17 cm -3 [5,106,115].…”
Section: Pyroelectric Detectormentioning
confidence: 99%
“…The state− −of−the−art devices have anode diameters about 0.25 μm and capacitances 0.25 fF. For high−frequency operation, the GaAs layers are doped up to n »(5-10)×10 17 cm -3 [5,106,115].…”
Section: Pyroelectric Detectormentioning
confidence: 99%
“…The spectroradiometer uses a low-noise superheterodyne receiver with an SBD mixer, which is similar to that described earlier in [5]. A broadband mixer and an intermediate-frequency preamplifier (IFPA) based on pHEMT transistors with high mobility of carriers [6] are combined into a single block [7].…”
Section: The Receiving and Measuring Facilitymentioning
confidence: 99%
“…One of the most sensitive SBD planar mixer receivers at n = 100 GHz and room tempera− ture operation and at T = 20 K were reported in Ref. 85. It was cited that the noise temperature is T noise (300 K) = 200 K and T noise (20 K) = 55 K, respectively.…”
Section: Schottky-barrier Diodesmentioning
confidence: 99%
“…The state−of−the−art devices have anode diameters AE~0.25 μm and capacitances C~0.25 fF. For high−frequency operation, the GaAs layers are doped up to n~(5-10)×10 17 cm −3 [3,79,85]. …”
Section: Schottky-barrier Diodesmentioning
confidence: 99%