High Dielectric Constant ZrO2 Films by Atomic Layer Deposition Technique on Germanium Substrates

Mahajan, Ashok M.; Khairnar, Anil G.; Thibeault, B.J.

doi:10.1007/s12633-015-9322-7

Cited by 16 publications

(9 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…In our efforts, it is believed that ZrO 2 could be able to use as a metal oxide to coat on Zn anode surface and play the beneficial function. ZrO 2 is a typical ceramic insulating material, possessing high dielectric constant (ε ≈ 25), low electrical conductivity, good chemical stability, and corrosion resistance at room temperature, while Zn metal is an extremely good conductor with high electrical conductivity and low dielectric constant 45–48. Furthermore, ZrO 2 with both good chemical stability and corrosion resistance can be stable in the commonly used ZnSO 4 electrolyte solution in Zn‐based batteries.…”

Section: Introductionmentioning

confidence: 99%

“…ZrO 2 is a typical ceramic insulating material, possessing high dielectric constant (ε ≈ 25), low electrical conductivity, good chemical stability, and corrosion resistance at room temperature, while Zn metal is an extremely good conductor with high electrical conductivity and low dielectric constant. [45][46][47][48] Furthermore, ZrO 2 with both good chemical stability and corrosion resistance can be stable in the commonly used ZnSO 4 electrolyte solution in Zn-based batteries. Thus, ZrO 2 would be an appealing candidate for coating the surface of Zn anode to obtain fast ion kinetics and controllable nucleation sites for Zn 2+ .…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Highly Reversible Zn Anode Enabled by Controllable Formation of Nucleation Sites for Zn‐Based Batteries

Liang

Liu

et al. 2020

Adv Funct Materials

592

425

View full text Add to dashboard Cite

Aqueous Zn batteries have drawn tremendous attention for their several advantages. However, the challenges of Zn anodes such as the corrosion and ZnO densification have compromised their application in rechargeable Zn‐based batteries. In this paper, a straightforward strategy is employed to facilitate the uniform Zn stripping/plating of the Zn anode through using a ZrO2 coating layer, which contributes to the controllable nucleation sites for Zn2+ and fast Zn2+ transportation through the favorable Maxwell–Wagner polarization. As a result, the low polarization (24 mV at 0.25 mA cm−2), high Coulombic efficiency (99.36% at 20 mA cm−2), and long cycle life (over 3800 h at 0.25 mA cm−2) can be obtained for the ZrO2‐coated Zn anode. It is believed that the ZrO2 coating layer can also act as an inert physical barrier to decrease the contact of the anode and electrolyte, thus reducing both the Zn corrosion and formation of ZnO densification, and then improve the reversibility of Zn anode. The results demonstrated in this work provide an appealing strategy for the future development of rechargeable Zn‐based batteries.

show abstract

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Highly Reversible Zn Anode Enabled by Controllable Formation of Nucleation Sites for Zn‐Based Batteries

Liang

Liu

et al. 2020

Adv Funct Materials

592

425

View full text Add to dashboard Cite

show abstract

“…It also enables rapid deposition using O 2 plasma instead of water vapor because the approaches yield the highest quality films and minimize thermal damage to the weak substrate during the deposition process. 5 The ZrO 2 film is a promising material used in many applications such as corrosion barriers, 6,7 high-k gate dielectrics, 8,9 and resistive memory. 10 To fabricate the necessary pinhole-free and dense thin film, ALD and PEALD have been widely used for ZrO 2 thin film deposition.…”

Section: ■ Introductionmentioning

confidence: 99%

“…The ZrO 2 film is a promising material used in many applications such as corrosion barriers, , high- k gate dielectrics, , and resistive memory . To fabricate the necessary pinhole-free and dense thin film, ALD and PEALD have been widely used for ZrO 2 thin film deposition. , The ZrO 2 films produced using the PEALD method are polycrystalline and have rough surfaces .…”

Section: Introductionmentioning

confidence: 99%

The Cut-Off Phenomenon Effect on ZrO₂ Growth Using Remote Plasma-Enhanced Atomic Layer Deposition

et al. 2017

View full text Add to dashboard Cite

Remote plasma-enhanced atomic layer deposition (R-PEALD) of zirconium dioxide (ZrO2) experiments were conducted using tetrakis(dimethylamino)zirconium (TDMAZ) with O2 plasma as the oxidant. The reaction mechanisms of ZrO2 were studied using in situ quartz crystal microbalance (QCM) and in situ quadrupole mass spectroscopy (QMS). QMS revealed typical combustion byproducts such as CO2, CO, NO, and H2O during the O2 plasma process. In addition, Fourier transform infrared spectroscopy (FTIR) measurements were used to identify the bonds present in the thin film at different deposition temperatures. In our previous work, it was found that an increase in temperature resulted in a reduction of impurities in thin films. The influence of the deposition temperature on several possible surface reaction characteristics of the plasma process was studied. Such characteristics included composition of the film and growth per cycle. In particular, it was first demonstrated that the −CN group gave rise to cutoff phenomenon at high temperature. Several reaction pathways were accordingly established. The present work initiates a new way of achieving controlled growth properties of ZrO2 thin films.

show abstract

“…Şu ana kadar HfO2 [9], Al2O3 [10], ZrO2 [11] gibi birçok yüksek-k'lı oksit üzerinde durulmuş ve bu dielektrikler yeni nesil MOS yapıları için önerilmiş olmasına rağmen, ara yüzey kalitesi ve ara yüzey tuzak yük yoğunluğu (Nit) hala bu yapılarda önemli bir problem olarak karşımıza çıkmaktadır [12][13]. Yüksek-k'lı malzeme ile Si arasındaki kafes uyuşmazlığı özellikle ara yüzeyde ve bu bölgeye yakın alanlarda elektron tuzak merkezlerinin oluşmasına neden olur [14].…”

unclassified

Effects of interface states and series resistance on the electrical characteristic of Sc2O3 MOS capacitor

Kahraman

Yılmaz

2018

Sakarya University Journal of Science

View full text Add to dashboard Cite

Bu çalışmanın amacı, ara yüzey seviyelerinin ve seri direcin (Rs) Sc2O3 (Skandiyum oksit) MOS (Metal Oksit Yarıiletken) kapasitörünün elektriksel karakteristiği üzerine etkisini frekansa bağlı olarak incelemektir. Sc2O3 MOS kapasitörü RF magnetron saçtırma sistemi ile p tipi Si (100) üzerine üretilmiştir. Kapasitörün kapasitans-voltaj (C-V) ve iletkenlik-voltaj (G/ω-V) değişimleri, 50 kHz ile 1 MHz arasında değişen altı farklı frekansta ölçülmüştür. Elde edilen sonuçlar, C-V eğrisinin yığılım bölgesinde kapasitans değerlerinin Rs etkisi nedeniyle beklenenden daha düşük olduğunu göstermiştir. G/ω-V karakteristiklerinde ise bu etki nedeniyle pikler belirgin bir şekilde oluşmamıştır. Bu nedenle, ölçüm sonuçlarına Rs düzeltmesi yapıldıktan sonra, Sc2O3/Si ara yüzeyinde oluşan tuzak yüklerinin elektriksel karakteristik üzerine etkisi incelenmiştir. Frekansın azalmasıyla birlikte ara yüzey tuzak yükleri, AC voltaj sinyalini takip ederek ölçülen kapasitansa katkı sağlamışlardır. Düzeltilmiş C-V ve G/ω-V ölçümlerinden yararlanılarak p tipi Si için taşıyıcı konsantrasyonu (Na), bariyer yüksekliği (ΦB) ve Fermi seviyesi -değerlik bandı arasındaki enerji farkı (EF) değerleri hesaplanmıştır.

show abstract

High Dielectric Constant ZrO2 Films by Atomic Layer Deposition Technique on Germanium Substrates

Cited by 16 publications

References 16 publications

Highly Reversible Zn Anode Enabled by Controllable Formation of Nucleation Sites for Zn‐Based Batteries

Highly Reversible Zn Anode Enabled by Controllable Formation of Nucleation Sites for Zn‐Based Batteries

The Cut-Off Phenomenon Effect on ZrO₂ Growth Using Remote Plasma-Enhanced Atomic Layer Deposition

Effects of interface states and series resistance on the electrical characteristic of Sc2O3 MOS capacitor

Contact Info

Product

Resources

About

High Dielectric Constant ZrO2 Films by Atomic Layer Deposition Technique on Germanium Substrates

Cited by 16 publications

References 16 publications

Highly Reversible Zn Anode Enabled by Controllable Formation of Nucleation Sites for Zn‐Based Batteries

Highly Reversible Zn Anode Enabled by Controllable Formation of Nucleation Sites for Zn‐Based Batteries

The Cut-Off Phenomenon Effect on ZrO2 Growth Using Remote Plasma-Enhanced Atomic Layer Deposition

Effects of interface states and series resistance on the electrical characteristic of Sc2O3 MOS capacitor

Contact Info

Product

Resources

About

The Cut-Off Phenomenon Effect on ZrO₂ Growth Using Remote Plasma-Enhanced Atomic Layer Deposition