High Deposition Rate of Polycrystalline Silicon Thin Films Prepared by Hot Wire Cell Method

Abstract

The hot wire (HW) cell method has been newly developed and successfully applied to grow polycrystalline silicon films at low temperatures with a relatively high growth rate of 0.9–1.1 nm/s. In the HW cell method, mono silane (SiH4) is decomposed by reacting with a heated tungsten wire placed near the substrate. It is found that polycrystalline silicon films can be obtained at substrate temperatures of 175–400°C without hydrogen dilution when the deposition pressure is 0.1 Torr.

Effect of the Structural Change of Hydrogenated Microcrystalline Silicon Thin Films Prepared by Hot-Wire Chemical Vapor Deposition

“…The filament was placed perpendicular to the substrate holder in order to realize efficient gas decomposition. 3) Corning #7059 glass substrates or quartz substrates were used for the intrinsic film preparation. Typical deposition conditions are summarized in Table I.…”

“…1,2) This technique is a candidate for high-rate deposition technique due to its ability to efficiently decompose reactant gasses on the surface of the catalyzer. 3,4) So far, we have reported the single junction p-i-n-type mc-Si:H solar cells with a conversion efficiency of 6.0% and using coil-shaped tungsten wire as a catalyzer. 1) As mc-Si:H thin films contain a certain amount of crystallites embedded within the amorphous phase, we cannot avoid the existence of boundaries that can work as defects in the film.…”

Low Temperature Growth of Polycrystalline Silicon Films by Hot-Wire Chemical Vapor Deposition Using SiCl4/H2 Gases

“…6,7) Considering the formation of crystalline silicon films using chlorinated silanes, a proper [H] in the gas phase for abstracting the surface Si-Cl to form dangling bonds might be significant for large crystal growth. Therefore in this study, a hot-wire CVD system was employed to decompose H 2 through the catalytic cracking reaction 8,9) for the low-temperature growth of polycrystalline silicon films. The characterization of the growth of low-temperature crystalline silicon films using SiCl 4 /H 2 in * Corresponding author.…”

Microcrystalline silicon thin film transistors obtained by hot-wire CVD

“…The use of microcrystalline silicon (c-Si:H) thin film material deposited at low temperature is a good alternative to substitute either for a-Si:H or for polycrystalline silicon. Among the different deposition techniques that are being investigated, the Hot Wire Chemical Vapour Deposition (HWCVD) has drawn a lot of attention because of its capability to obtain device-quality hydrogenated microcrystalline silicon (c-Si:H) at low temperature over large area [2,3,4]. In the HWCVD technique, gases are dissociated by the catalytic effect in a tungsten filament heated to high temperature (1700ºC).…”