Effect of the Structural Change of Hydrogenated Microcrystalline Silicon Thin Films Prepared by Hot-Wire Chemical Vapor Deposition

Abstract

A pole-term model using realistic electromagnetic and hadronic vertices for N and A vertices is compared with photoproduction data and recent electroproduction data. The latter include density matrix elements of the A decay distributions. The accuracy of the model is good for pions produced at the periphery of the A resonance.

Study on the role of filament temperature on growth of indium-catalyzed silicon nanowires by the hot-wire chemical vapor deposition technique

“…The number of H radicals required to form a highly crystalline structure of the Si nanocolumns should reach a certain quantity. Since the decomposition of each single SiH 4 molecule from the HW surface is able to produce four H atoms, the H-induced crystallization of the nanocolumns in HWCVD can be achieved at low hydrogen dilution or even hydrogen-free deposition [24,58].…”

Low-temperature Deposition of Hydrogenated Microcrystalline Silicon Thin Films by Photochemical Vapor Deposition Technique and Their Application to Thin Film Solar Cells

“…The decrease in diffusion lengths with crystalline volume fraction is probably due to the effect of boundary defects. 13) A large diffusion length even at a high crystalline volume fraction implies the suppressed density of boundary defects in the obtained film. Therefore, well-lateral-grown crystalline aggregations even at a high crystalline volume fraction can be expected in films deposited by photo-CVD technique.…”

“…Figure 3 shows the result of ambipolar diffusion length measurement as a function of the crystalline volume fraction of the films. Results from the films deposited by HWCVD technique 13) are also shown in the figure for comparison. The diffusion lengths in the directions perpendicular (triangles) and parallel (diamonds) to the substrate were estimated from the result of SPV and SSPG techniques, respectively.…”

Hydrogenated Amorphous Silicon Oxide Solar Cells Fabricated near the Phase Transition between Amorphous and Microcrystalline Structures

“…The p-layer and buffer layer were deposited by photo-CVD, and the n-layer was deposited by hot wire CVD. 8,9) ZnO:B was deposited by metal organic CVD (MOCVD), 10) and Al and Ag were deposited by thermal evaporation. The thicknesses of the p-layer, buffer layer, i-layer, and n-layers were kept constant at 20, 6, 120, and 75 nm, respectively.…”