High deposition rate laser direct writing of Al on Si

Lee, H. W.; Allen, Susan D.

doi:10.1063/1.105019

Cited by 30 publications

(5 citation statements)

References 16 publications

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“…Therefore, the development of novel techniques that are dry, non-contact and non-destructive is needed for nanoparticle removal. The use of short pulsed lasers for direct pulsed laser irradiation processes has been demonstrated and analysed in the past [6,7]. The inertial forces generated due to the short pulse initiated rapid thermal expansion result in high surface acceleration [8], which leads to particle removal.…”

Section: Introductionmentioning

confidence: 99%

Non-contact nanoparticle removal with laser induced plasma pulses

Cetinkaya¹,

Peri

2004

Nanotechnology

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Nanoscale substrate cleanliness is an essential requirement in a variety of nanotechnology applications. The proposed particle removal technique based on pressure shock waves due to laser induced plasma is of interest in various nano/micro-manufacturing applications in which the minimum feature size is reducing rapidly. Any removal method adopted in a manufacturing process must be on the same shrinking feature reduction curve since, for device reliability, the minimum tolerable foreign particle size on a substrate depends on the minimum feature size on a nano/microsystem or device. In the current study, the transient pressure fields exerted on a surface with nanosecond pulse laser generated plasma shock waves are measured using a polyvinylidene difluoride film (PVDF)-based line transducer that was designed and tested for this particular measurement task. Using the pressure data, the corresponding diameters of latex particles that can be removed at these pressure levels are then calculated. It has been shown that latex particles as small as 60 nm in diameter can be removed from silicon surfaces using the nanosecond pulsed laser. Experimental removal data supporting these predictions are also included and discussed.

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Section: Introductionmentioning

confidence: 99%

Non-contact nanoparticle removal with laser induced plasma pulses

Cetinkaya¹,

Peri

2004

Nanotechnology

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“…As the laser power increases, the resistivity of the deposited copper lines decreases at low power levels, reaches a minimum, and then increases as the laser power further increases, similar to what is ob- S0013-4651(99)04-021-5 CCC: $7.00 © The Electrochemical Society, Inc. served in LCVD. 14,15,34 At slower scanning speeds large-grained deposits that are not fully dense are produced and the resistivity increases with the dwell time. At scanning speeds faster than those investigated here, resistivity again increases as uniform film nucleation is not achieved.…”

Section: Resultsmentioning

confidence: 99%

“…11 Liquid precursors can be dissolved in solvents, 12 made into a paste layer, 13 or used as neat compounds. 14,15 The mechanism of deposition using liquid precursors has been proposed to be either a photochemical 16,17 or thermal decomposition reaction involving one or more precursors. 18,19 Laser-enhanced electroplating 20,21 and electroless plating 22 were first reported by von Gutfeld et al They reported local plating enhancement rates as high as ϳ10 3 utilizing highly localized heating caused by the absorption of a focused laser beam at the substrate.…”

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confidence: 99%

Laser Enhanced Electroless Plating of Micron-Scale Copper Wires

Chen¹,

Imen

Allen

2000

J. Electrochem. Soc.

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Laser "direct writing" (LDW) or maskless pattern deposition has been extensively studied for more than a decade. 1,2 LDW is potentially attractive in semiconductor device customization, repair, prototyping, and packaging applications. [3][4][5] Copper is an important metallization material in microelectronic circuits 6,7 and multichip module interconnections, 8,9 largely because of its low electrical resistivity. A major limitation of LDW technologies for device metallization applications using laser chemical vapor deposition (LCVD) techniques has been the lack of Cu precursors with sufficiently high vapor pressure. The most common precursors used for the large area CVD of copper are copper(II) and ligand-stabilized copper(I) ␤-diketonate compounds. 10 While the vapor pressures of these precursors are, in general, sufficient for conventional CVD (deposition rates greater than or equal to a micrometer per hour), they are too low to allow the fast deposition rates (mm/s) required for LCVD applications. Advanced technologies making direct use of liquidphase delivery of precursors to the reaction zone have been developed. Solid-phase precursors can be dissolved into selected solvents such as 2-propanol or ethanol to provide highly controllable flow rates to the reaction zone. 11 Liquid precursors can be dissolved in solvents, 12 made into a paste layer, 13 or used as neat compounds. 14,15 The mechanism of deposition using liquid precursors has been proposed to be either a photochemical 16,17 or thermal decomposition reaction involving one or more precursors. 18,19 Laser-enhanced electroplating 20,21 and electroless plating 22 were first reported by von Gutfeld et al. They reported local plating enhancement rates as high as ϳ10 3 utilizing highly localized heating caused by the absorption of a focused laser beam at the substrate. Self-induced repair (SIR) of microelectronic circuits using joule heating induced local electrodeposition demonstrated by Chen is analogous to laser enhanced electroless plating. 23 The electrochemical conditions necessary for an electroless plating process to take place are (i) the reducing potential of the reductant must be less than that of the reducing potential of the metal and (ii) the metal must have enough catalytic activity for the anodic oxidation to take place at a reasonable rate. In a laser-enhanced electroless plating (LEEP) process the laser-induced temperature rise in the substrate enhances the local chemical reaction, causing the redox reaction to take place and metal to be deposited. The reducing agent needs to be chosen such that reduction takes place at an elevated temperature but not at ambient so that spatially selective laser deposition can take place. The redox potentials of selected reducing agents are listed in Table I. ExperimentalThe experimental setup is shown in Fig. 1. An Ar ion laser delivering a linearly polarized transmission electron microscopy (TEM 00 ) beam was used as the driving energy source. The laser was operated at a single wavelength of 514.5 nm whi...

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“…In addition the components are affordable and easy to handle. LCLD is a wellknown technique and is applied for a long time already [1][2][3][4][5][6][7][8][9]. In recent work, our group investigated an ablation technique called laser induced backside wet etching (LIBWE) [10,11].…”

Section: Introductionmentioning

confidence: 99%

Laser-induced chemical liquid-phase deposition of copper on transparent substrates

Zehnder

Schwaller

Arx

et al. 2012

ALT

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Laser-induced chemical liquid phase deposition allows maskless manufacturing of metallic structures on the surface of dielectrics and is prospected to be a promising tool in the field of microelectronics and microfluidics. The aim of the work presented here is to combine this deposition method with a related micro-structuring method known as laser-induced backside wet etching. Fabricating both, microstructured surface structures and subsequent deposition of conducting patterns within the same setup would be an interesting tool for rapid prototyping.To demonstrate the functional principle of this combined approach conductive copper lines were deposited at the backside of both polished and structured soda lime glass substrates by using a focused, scanning ns-pulsed Ytterbium fiber laser at 532nm wavelength. The deposition process is initiated by a photo induced reaction of a CuSO4-based liquid precursor in contact with the backside of the substrate. The obtained metallic copper deposits are crystalline, stable under ambient conditions and have a conductivity in the same order of magnitude as bulk copper.

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High deposition rate laser direct writing of Al on Si

Abstract: Direct laser writing of amorphous silicon on Si-substrate induced by high repetition femtosecond pulses

Cited by 30 publications

References 16 publications

Non-contact nanoparticle removal with laser induced plasma pulses

Non-contact nanoparticle removal with laser induced plasma pulses

Laser Enhanced Electroless Plating of Micron-Scale Copper Wires

Laser-induced chemical liquid-phase deposition of copper on transparent substrates

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