Proceedings of the 4th International Symposium on Electronic Materials and Packaging, 2002.
DOI: 10.1109/emap.2002.1188809
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High density packaging in 2010 and beyond

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Cited by 20 publications
(5 citation statements)
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“…In these geometries, a significant portion of the passive elements are located not on-chip (where possible), but rather on-package thereby saving chip real estate, improving performance, and reducing cost since the package is inevitably cheaper than the corresponding semiconductor material. The demands for compactness and functionality, as well as the close proximity of these passives to the antenna [3], especially for 802.11x/Bluetooth compact modules, make the design and optimization processes of such systems more and more challenging.…”
Section: Introductionmentioning
confidence: 99%
“…In these geometries, a significant portion of the passive elements are located not on-chip (where possible), but rather on-package thereby saving chip real estate, improving performance, and reducing cost since the package is inevitably cheaper than the corresponding semiconductor material. The demands for compactness and functionality, as well as the close proximity of these passives to the antenna [3], especially for 802.11x/Bluetooth compact modules, make the design and optimization processes of such systems more and more challenging.…”
Section: Introductionmentioning
confidence: 99%
“…Wire bond machines utilize precise control of bonding force, ultrasonic vibration, bonding temperature and bonding time to establish the connection between gold wire to bond pad or leadframe. The trend of increased integration has resulted in new challenges for wire bond process; mainly because more wires are bonded on a chip and pad pitch has become smaller [3]. A single semiconductor product can contain as much as 600 wires and pitch distance can be as low as 50 micron or smaller [4].…”
Section: Introductionmentioning
confidence: 99%
“…Since the past decades, the demands of fabricating cheaper consumer electronic products having compact size, faster response, better performance and additional functionalities, are growing with each passing day. The continuously increasing demands have motivated the researchers to develop the next generation of electronic products [1][2][3][4][5].…”
Section: Present Status and Future Trends In The Microsystems Packagingmentioning
confidence: 99%
“…These nano-size ICs are expected to carry more than 100 million transistors, which will further require an interconnect density of more than 10,000 I/Os cm -2 , for the 1 st level interconnects (Figure 1.1b). These kind of highly dense 1 st level interconnects will be needed in the advanced next generation of microprocessors where signal lines can have more than 200 I/Os, while the power and ground connections may be in order of 2000 [5]. Such a fine pitch is not possible in the conventional interconnection techniques such as flip chip, wire bonding etc, where the interconnect pitch size is in the range of 200 µm (ultra fine pitch) to 400 µm (fine pitch) and thus, limits the density of I/Os to 625-2500 cm -2 .…”
Section: Reduced Package Size and Higher Density Of I/o's Per Chipmentioning
confidence: 99%
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