High density hybrid integrated light source with a laser diode array on a silicon optical waveguide platform for inter-chip optical interconnection

Shimizu, Takanori; Hatori, Nobuaki; Okano, Makoto; Ishizaka, Masashige; Urino, Yutaka; Yamamoto, Tsuyoshi; Mori, Masahiko; Nakamura, Takahiro; Arakawa, Yasuhiko

doi:10.1109/group4.2011.6053756

Cited by 36 publications

(23 citation statements)

References 6 publications

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“…In addition to visual alignment, a trident spot-size converter of the silicon optical waveguide was introduced for submicron alignment of the LD and silicon optical waveguide. We achieved a low coupling loss of 2.3 dB and high alignment tolerances of ±1 μm [3,4]. For the light distributor, a 1×4 MMI splitter was introduced as the optical splitter.…”

Section: Photonics-electronics Convergence Systemmentioning

confidence: 99%

High-density silicon optical interposer for inter-chip interconnects

Nakamura

Urino

Arakawa

2014

Silicon Photonics and Photonic Integrated Circuits IV

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Section: Photonics-electronics Convergence Systemmentioning

confidence: 99%

High-density silicon optical interposer for inter-chip interconnects

Nakamura

Urino

Arakawa

2014

Silicon Photonics and Photonic Integrated Circuits IV

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“…The LD arrays are mounted on the platform with AuSn solder bumps by flip-chip bonding [5,6]. The alignment marks on the LD array and mounting stage allow highly accurate horizontal positioning of the LD array (alignment accuracy: better than ±0.5 m with visual alignment technique).…”

Section: Hybrid Integration Structurementioning

confidence: 99%

“…To reach the bandwidth of around 10-Tbit/s, an over 1000-channel light source is required, assuming 10 Gbit/s per channel. We developed a hybrid integrated light source with a laser diode array on a silicon optical waveguide platform [5] and demonstrated a light source with over 100 output ports in which the number of output ports is increased by using a waveguide splitter and multichip bonding [6].…”

Section: Introductionmentioning

confidence: 99%

Multi-channel and high-density hybrid integrated light source by thermal management for low power consumption for ultra-high bandwidth optical interconnection

Shimizu¹,

Okano²,

Takahashi³

et al. 2014

2014 International Conference on Electronics Packaging (ICEP)

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To realize an over 10-Tbit/s bandwidth optical interconnection, a 1000-channel light source was demonstrated by using novel spot-size converters with a SiO x slab layer for a wide fabrication margin and by optimization done in consideration of the thermal interference between each channel in an LD array and also between the LD array chips for low power consumption. We expect the multi-channel and highdensity light source to be easily adapted to a photonicselectronics convergence system for ultra-high bandwidth interchip interconnection.

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“…Heterogeneous integration [17], [18] and off-chip assembly [19]- [21] methods are generally used to integrate III/V materials on the silicon chip. In the heterogeneous integration, III/V material is heterogeneously integrated on the silicon chip using molecular wafer bonding or divinylsiloxane-benzocyclobutene (DVS-BCB) adhesive wafer bonding.…”

Section: Introductionmentioning

confidence: 99%

“…It can be assembled upon silicon chip using active or passive alignment technique [23]. Generally, the butt-joint coupling with spot-size converters (SSC) [19], [21] or micro-lens [20] is used to couple lightwave between off-chip devices and waveguides. However, the small alignment tolerance and optical coupling efficiency would be a concern for cost-effective and mass produced chip-level optical interconnects.…”

Section: Introductionmentioning

confidence: 99%

Implementation of Chip-Level Optical Interconnect With Laser and Photodetector Using SOI-Based 3-D Guided-Wave Path

et al. 2014

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A chip-level optical interconnect module combined with a vertical-cavity surfaceemitting laser (VCSEL) chip, a photodetector (PD) chip, a driver integrated circuit (IC), and an amplifier IC on a silicon-on-insulator (SOI) substrate with 3-D guided-wave paths is experimentally demonstrated. Such an optical interconnect is developed for the signal connection in multicore processors or memory-to-processor interfaces. The 3-D guided-wave path, consisting of silicon-based 45 microreflectors and trapezoidal waveguides, is used to connect the optical signal between transmitter and receiver. In this paper, the VCSEL and PIN PD chips are flip-chip integrated on a SOI substrate to achieve complete chip-level optical interconnects. Due to the unique 3-D guided-wave path design, a higher laser-to-PD optical coupling efficiency of À2.19 dB and a larger alignment tolerance of AE10 m for the VCSEL/PD assembly are achieved. The measured laser-to-PD optical transmission efficiency can reach À2.19 dB, and the maximum optical power and threshold current of VCSEL is 3.27 mW and 1 mA, respectively. To verify the data transmission, the commercial driver IC and amplifier IC are assembled upon the silicon chip, and the error-free data transmission of 10 Gbps can be achieved when the VCSEL is operated at the driving current of 9 mA.

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High density hybrid integrated light source with a laser diode array on a silicon optical waveguide platform for inter-chip optical interconnection

Cited by 36 publications

References 6 publications

High-density silicon optical interposer for inter-chip interconnects

High-density silicon optical interposer for inter-chip interconnects

Multi-channel and high-density hybrid integrated light source by thermal management for low power consumption for ultra-high bandwidth optical interconnection

Implementation of Chip-Level Optical Interconnect With Laser and Photodetector Using SOI-Based 3-D Guided-Wave Path

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