High-Current GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors

Abstract

We present electrical characterization of GaSb/InAs(Sb) nanowire tunnel field-effect transistors. The broken band alignment of the GaSb/InAs(Sb) heterostructure is exploited to allow for inter-band tunneling without a barrier, leading to high on-current levels. We report a maximum drive current of 310 µA/µm at VDS = 0.5 V. Devices with scaled gate oxides display transconductances up to gm = 250 mS/mm at VDS = 300 mV, normalized to the nanowire circumference at the axial heterojunction.

Carbon-based nanomaterials

“…To achieve MOSFET-type or TFET characteristics requires doped source/drain regions, which are still somewhat difficult to achieve and control with uniformity in carbon-based systems. .16 Summary of the predicted TFET performance for CNTs and GNRs along with experimentally reported performance of Schottky barrier FETs consisting of 1.3 nm CNT and $2 nm wide GNR (Dey et al, 2013;Gu et al, 2012;Franklin et al, 2012a;Wang et al, 2008).…”

“…However, the ON-OFF ratio falls short of requirements for various ITRS technologies (http://www.itrs.net/Links/2012ITRS/Home2012.htm). The main reason for the poor off-state current is the leakage current through the Schottky barrier (Franklin et al, 2012a,b) and III-V devices (Gu et al, 2012;Dey et al, 2013) (Zhou et al, 2012;Dey et al, 2013;Moselund et al, 2012;Hu, 2008;Wang et al, 2010;Ganapathi and Salahuddin, 2011;Gnani et al, 2011;Tomioka et al, 2012). The ITRS targeted values for low operating power (LOP) and high performance (HP) technologies are highlighted (http://www.itrs.net/Links/2012ITRS/Home2012.htm).…”

“…A comparison of the experimentally demonstrated performance of Schottky barrier CNTFETs with III-V MOSFET and T-FETs in Figure 8.9 reveals that today CNTFETs exhibit better on-state performance as compared to the rivaling III-V technologies (Zhou et al, 2012;Dey et al, 2013;Moselund et al, 2012;Hu, 2008;Wang et al, 2010;Ganapathi and Salahuddin, 2011;Gnani et al, 2011;Tomioka et al, 2012;Gu et al, 2012), however, the poor on-off ratio exhibited by the SB-CNTFETs reveals the need for short-channel carbon-based FETs with minimum off-state leakage. A number of obstacles need to be overcome before introducing CNTs into the mainstream manufacturing technology.…”

Quantum Simulation Study on Performance Optimization of GaSb/InAs nanowire Tunneling FET

“…There are lots of TFET types that have been proposed and among such various types, TFETs with a broken gap at source/channel junction have attracted much attention for a candidate to overcome low I ON issue [2][3][4][5][6]. However, none of these reports have approved the capability to achieve the required conditions for I ON and S. The difficulty in getting both conditions at once comes from the fact that the two device output parameters are generally proportion to each other.…”

Elastic-Plastic Transition in MBE-Grown GaSb Semiconducting Crystal Examined by Nanoindentation

“…It has turned out to be important candidate for applications in tunnel field-effect transistor, due to its inter-band tunneling capability exhibited when an energy barrier is absent [5]. With the recent development of nanomaterials, the engineers become increasingly aware that present applications of semiconductors require satisfactory mechanical characteristics in addition to already well-established electronic and optical properties.…”