High Current Density Esaki Tunnel Diodes Based on GaSb-InAsSb Heterostructure Nanowires

Ganjipour, Bahram; Dey, Anil W.; Borg, Bertil; Ek, Martin; Pistol, Mats‐Erik; Dick, Kimberly A.; Wernersson, Lars‐Erik; Thelander, Claes

doi:10.1021/nl202180b

Cited by 111 publications

(128 citation statements)

References 21 publications

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“…Recently, negative differential resistance (NDR) devices have attracted considerable attention owing to their folded current–voltage ( I – V ) characteristic (N-shaped I – V curve), which presents multiple threshold voltage values123456789101112131415161718192021222324252627. Because of this remarkable property, studies associated with the NDR devices have been explored for realizing multi-valued logic (MVL) applications17111326.…”

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confidence: 99%

Phosphorene/rhenium disulfide heterojunction-based negative differential resistance device for multi-valued logic

et al. 2016

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Recently, negative differential resistance devices have attracted considerable attention due to their folded current–voltage characteristic, which presents multiple threshold voltage values. Because of this remarkable property, studies associated with the negative differential resistance devices have been explored for realizing multi-valued logic applications. Here we demonstrate a negative differential resistance device based on a phosphorene/rhenium disulfide (BP/ReS2) heterojunction that is formed by type-III broken-gap band alignment, showing high peak-to-valley current ratio values of 4.2 and 6.9 at room temperature and 180 K, respectively. Also, the carrier transport mechanism of the BP/ReS2 negative differential resistance device is investigated in detail by analysing the tunnelling and diffusion currents at various temperatures with the proposed analytic negative differential resistance device model. Finally, we demonstrate a ternary inverter as a multi-valued logic application. This study of a two-dimensional material heterojunction is a step forward toward future multi-valued logic device research.

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confidence: 99%

Phosphorene/rhenium disulfide heterojunction-based negative differential resistance device for multi-valued logic

et al. 2016

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“…4 Very high interband tunnel current densities can be obtained across such interfaces due to the low-resistive nature of the InAs(Sb)-GaSb interface. 1,5 In recent years, interest in the junction has been renewed as it has been identified as a promising building block in ultra low-power tunnel field-effect transistors (FETs). 6 The system is also of considerable interest for studies of various quantum physics phenomena, in particular interactions in coupled electron-hole systems 7,8 such as quantum dots and 1D topological insulators.…”

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confidence: 99%

“…It may also be that the thin InAs shell improves carrier injection into the GaSb from the contacts. 5,13 Figures 3(c) and 3(d) show the output characteristics for the devices in Figs. 3(a) and 3(b).…”

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Carrier control and transport modulation in GaSb/InAsSb core/shell nanowires

Ganjipour

Borg

et al. 2012

Applied Physics Letters

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We report transport studies of GaSb/InAs core/shell nanowires. It is shown that with increasing InAs shell thickness, it is possible to tune the carrier concentrations and transport in the structures from p-type (core-dominated) to n-type (shell dominated). For nanowires with an intermediate shell thickness (5–7 nm), we show that the transport is ambipolar, such that an applied top-gate potential can provide further control of carrier type and transport path. In this range, the nature of the GaSb-InAs junction also changes from broken gap (semimetal) to staggered (narrow bandgap) with a small decrease in shell thickness. From a device point of view, we demonstrate that the presence of a thin (<3 nm) InAs shell improves p-type GaSb nanowire transistor characteristics.

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“…[142][143][144][145] One of the notable characteristics shown by III-V semiconductor NWs is the formation of polytypes. 14,[101][102][103][104] The polytypism found in III-V semiconductor NWs has been discussed in relation to growth kinetics 103,146) as well as the structural stability in equilibrium.…”

Section: Dynamics Of Nw Growthmentioning

confidence: 99%

In situ synchrotron X-ray diffraction study on epitaxial-growth dynamics of III–V semiconductors

Takahasi

2018

Jpn. J. Appl. Phys.

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The application of in situ synchrotron X-ray diffraction (XRD) to the molecular-beam epitaxial (MBE) growth of III-V semiconductors is overviewed along with backgrounds of the diffraction theory and instrumentation. X-rays are sensitive not only to the surface of growing films but also to buried interfacial structures because of their large penetration depth. Moreover, a spatial coherence length up to µm order makes X-rays widely applicable to the characterization of low-dimensional structures, such as quantum dots and wires. In situ XRD studies during growth were performed using an X-ray diffractometer, which was combined with an MBE chamber. X-ray reciprocal space mapping at a speed matching a typical growth rate was achieved using intense X-rays available from a synchrotron light source and an area detector. The importance of measuring the three-dimensional distribution of XRD intensity in a reciprocal space map is demonstrated for the MBE growth of two-, one-, and zero-dimensional structures. A large amount of information about the growth process of two-dimensional InGaAs/GaAs(001) epitaxial films has been provided by three-dimensional X-ray reciprocal mappings, including the anisotropic strain relaxation, the compositional inhomogeneity, and the evolution of surface and interfacial roughness. For one-dimensional GaAs nanowires grown in a Au-catalyzed vapor-liquid-solid mode, the relationship between the diameter of the nanowires and the formation of polytypes has been suggested on the basis of in situ XRD measurements. In situ three-dimensional X-ray reciprocal space mapping is also shown to be useful for determining the lateral and vertical sizes of self-assembled InAs/GaAs(001) quantum dots as well as their internal strain distributions during growth.

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High Current Density Esaki Tunnel Diodes Based on GaSb-InAsSb Heterostructure Nanowires

Cited by 111 publications

References 21 publications

Phosphorene/rhenium disulfide heterojunction-based negative differential resistance device for multi-valued logic

Phosphorene/rhenium disulfide heterojunction-based negative differential resistance device for multi-valued logic

Carrier control and transport modulation in GaSb/InAsSb core/shell nanowires

In situ synchrotron X-ray diffraction study on epitaxial-growth dynamics of III–V semiconductors

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