High‐current AlInN/GaN field effect transistors

Dadgar, A.; Neuburger, Martin; Schulze, F.; Bläsing, J.; Krtschil, A.; Daumiller, I.; Kunze, M.; Günther, Kay-Michael; Witte, Hartmut; Diez, A.; Kohn, E.; Krost, A.

doi:10.1002/pssa.200461466

Cited by 39 publications

(19 citation statements)

References 13 publications

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“…However, reports on AlInN and AlInN/GaN heterostructures in the literature are rapidly increasing. [14][15][16][17][18] Recently, Gonschorek et al 5 reported a mobility value of 1170 cm 2 / V s along with 2.6ϫ 10 13 cm -2 2DEG density for an undoped nearly lattice-matched AlInN/AlN/GaN heterostructure. The corresponding two-dimensional sheet resistance was reported as 210 ⍀ / ᮀ.…”

Section: Introductionmentioning

confidence: 99%

Comparison of the transport properties of high quality AlGaN/AlN/GaN and AlInN/AlN/GaN two-dimensional electron gas heterostructures

Tülek

Ilgaz

Gökden

et al. 2009

Journal of Applied Physics

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The transport properties of high mobility AlGaN/AlN/GaN and high sheet electron density AlInN/ AlN/GaN two-dimensional electron gas ͑2DEG͒ heterostructures were studied. The samples were grown by metal-organic chemical vapor deposition on c-plane sapphire substrates. The room temperature electron mobility was measured as 1700 cm 2 / V s along with 8.44ϫ 10 12 cm −2 electron density, which resulted in a two-dimensional sheet resistance of 435 ⍀ / ᮀ for the Al 0.2 Ga 0.8 N / AlN/ GaN heterostructure. The sample designed with an Al 0.88 In 0.12 N barrier exhibited very high sheet electron density of 4.23ϫ 10 13 cm −2 with a corresponding electron mobility of 812 cm 2 / V s at room temperature. A record two-dimensional sheet resistance of 182 ⍀ / ᮀ was obtained in the respective sample. In order to understand the observed transport properties, various scattering mechanisms such as acoustic and optical phonons, interface roughness, and alloy disordering were included in the theoretical model that was applied to the temperature dependent mobility data. It was found that the interface roughness scattering in turn reduces the room temperature mobility of the Al 0.88 In 0.12 N / AlN/ GaN heterostructure. The observed high 2DEG density was attributed to the larger polarization fields that exist in the sample with an Al 0.88 In 0.12 N barrier layer. From these analyses, it can be argued that the AlInN/AlN/GaN high electron mobility transistors ͑HEMTs͒, after further optimization of the growth and design parameters, could show better transistor performance compared to AlGaN/AlN/GaN based HEMTs.

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Section: Introductionmentioning

confidence: 99%

Comparison of the transport properties of high quality AlGaN/AlN/GaN and AlInN/AlN/GaN two-dimensional electron gas heterostructures

Tülek

Ilgaz

Gökden

et al. 2009

Journal of Applied Physics

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“…The spike thickness was varied from 1 nm (blue) to 1.8 nm (red) and to 2.3 nm (pink) while the sum of barrier and spike thickness was kept constant. For an increasing spike thickness a shift of the hump between the GaN and AlN peak to higher angles appears as already denoted in [3]. The comparison with our measurement data limits the probable thickness range to 0.8 nm to 1.2 nm.…”

Section: Methodsmentioning

confidence: 63%

“…Attractive for high frequency and high power applications, AlGaN/GaN-based high electron mobility transistors (HEMT) have been the focus of research for several years now and have thus been developed to a reasonable level of maturity [1][2][3]. A promising new approach to improve the performance of such devices is to replace the AlGaN barrier layers with AlInN.…”

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confidence: 99%

Optimisation of AlInN/GaN HEMT structures

Khoshroo

Mauder

Zhang

et al. 2008

Phys. Status Solidi (c)

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We report on the growth and characterisation of 190 nm thick Al0.83In0.17N layers and Al0.83In0.17N/GaN high electron mobility transistor (HEMT) structures on GaN/sapphire. High‐resolution X‐ray diffraction rocking curve measurements (HRXRD) exhibit full width at half maximum (FWHM) values of 68 and 175 arcsec for the GaN (0002) and (10‐15) reflections, respectively. The corresponding Al0.83In0.17N reflections yield 321 and 582 arcsec on 190 nm thick layers. XRD simulations of HEMT structures match well with measured data and with the intended heterostructure stack. Layer thickness fringes up to the 3rd order indicate a good heterointerface and enable precise barrier thickness determination. Further, no spinodal decomposition is detected for AlInN in both symmetrical and asymmetrical reciprocal space map measurements. Electrical characterisations of the HEMT at room temperature yielded a charge carrier density of ns = 2 x 1013 cm–2 and a mobility of µ = 1460 cm2/Vs underlined by processed devices demonstrating maximum drain current densities of 1.2 A/mm at VGS = 2 V and extrinsic transconductances of 243 mS/mm (LG = 1 µm, WG = 50 µm, 5 µm source‐drain spacing). (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…(2) As Al 0.83 In 0.17 N and GaN are lattice matched, there are no mechanical constraints in the epitaxial structures. These mechanical constraints are harmful to the reliability of the devices and are also supposed to be at the origin of trapping centers in transistors [7][8][9].…”

Section: Introductionmentioning

confidence: 99%

Electrical performances of AlInN/GaN HEMTs. A comparison with AlGaN/GaN HEMTs with similar technological process

Jardel

Callet

Dufraisse

et al. 2011

Int. J. Microw. Wireless Technol.

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A study of the electrical performances of AlInN/GaN High Electron Mobility Transistors (HEMTs) on SiC substrates is presented in this paper. Four different wafers with different technological and epitaxial processes were characterized. Thanks to intensive characterizations as pulsed-IV, [S]-parameters, and load-pull measurements from S to Ku bands, it is demonstrated here that AlInN/GaN HEMTs show excellent power performances and constitute a particularly interesting alternative to AlGaN/GaN HEMTs, especially for high-frequency applications beyond the X band. The measured transistors with 250 nm gate lengths from different wafers delivered in continuous wave (cw): 10.8 W/mm with 60% associated power added efficiency (PAE) at 3,5 GHz, 6.6 W/mm with 39% associated PAE at 10.24 GHz, and 4.2 W/mm with 43% associated PAE at 18 GHz.

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High‐current AlInN/GaN field effect transistors

Cited by 39 publications

References 13 publications

Comparison of the transport properties of high quality AlGaN/AlN/GaN and AlInN/AlN/GaN two-dimensional electron gas heterostructures

Comparison of the transport properties of high quality AlGaN/AlN/GaN and AlInN/AlN/GaN two-dimensional electron gas heterostructures

Optimisation of AlInN/GaN HEMT structures

Electrical performances of AlInN/GaN HEMTs. A comparison with AlGaN/GaN HEMTs with similar technological process

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