2019
DOI: 10.1364/oe.27.026405
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High-contrast optical switching using an epsilon-near-zero material coupled to a Bragg microcavity

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Cited by 16 publications
(10 citation statements)
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“…The plasma frequency ω p can be written as 27 : where m = 0.12 m 0 ( m 0 the free electron mass) denotes the effective mass, ħ is the reduced Plank’s constant, C = 0.34 eV −1 19 determines the structure of non-parabolic conduction, and the function f 0 ( E , T e ) is the Fermi–Dirac distribution function determined by electron temperature T e and the electron energy E . Here, electron-temperature-dependence of f 0 is mainly due to the fact that T e can produce a change in electro-chemical potential and thereby modifying Fermi–Dirac function.…”
Section: Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…The plasma frequency ω p can be written as 27 : where m = 0.12 m 0 ( m 0 the free electron mass) denotes the effective mass, ħ is the reduced Plank’s constant, C = 0.34 eV −1 19 determines the structure of non-parabolic conduction, and the function f 0 ( E , T e ) is the Fermi–Dirac distribution function determined by electron temperature T e and the electron energy E . Here, electron-temperature-dependence of f 0 is mainly due to the fact that T e can produce a change in electro-chemical potential and thereby modifying Fermi–Dirac function.…”
Section: Methodsmentioning
confidence: 99%
“…In the recent two decades, transparent conductive oxide (TCO) such as indium tin oxide (ITO) 11 , aluminum-doped zinc oxide (AZO) 12 , cadmium oxide (CdO) 13 have attracted considerable interest in epsilon-near-zero (ENZ) spectral region. Such media exhibit a vanishing permittivity at ENZ wavelength, giving rise to a series of new physical phenomena 14 , such as enhanced electric field 15 , large optical nonlinearity 11 , ultrashort pulse interaction 16 , etc., and advanced applications including electro-optical modulator 17 , 18 , all-optical switch 19 , perfect absorber 13 , etc. For all-optical switching, ENZ TCO materials also have several advantages, such as greater refractive index change by pump excitation, ultrafast response time 11 , and intraband optical excitation 13 .…”
Section: Introductionmentioning
confidence: 99%
“…where ε 0 is the vacuum permittivity, c is the speed of light in vacuum, ω is the angular frequency of light, and χ ð3Þ is the material's third-order nonlinear susceptibility. The giant optical nonlinearity of ENZ materials has been exploited for secondand third-harmonic generation, [33][34][35] high-harmonic generation, 36 terahertz wave generation, 37,38 all-optical switching, [39][40][41][42] and temporal pulse shaping. [43][44][45][46] Moreover, it has been shown that the strong coupling between a plasmonic metasurface and a thin film made of an ENZ material can result in a further enhanced and tailorable nonlinear optical response.…”
Section: Introductionmentioning
confidence: 99%
“…12−14 Among these, ENZ materials represented by transparent conductive oxides (TCOs) have a large nonlinear response, 15,16 sub-picosecond response time, 17 and good complementary metal oxide semiconductor (CMOS) compatibility, 18 making them a potential all-optical switching material platform. ENZ-enhanced nonlinear refraction has inspired many studies on ultrafast all-optical switches based on TCOs, such as unpatterned ENZ films, 12,13 ENZ microcavities, 14,19 nanorods, 20,21 and nanocrystals. 22,23 A representative study in this field is the development of an ultrafast polarization alloptical switch based on the CdO Berreman microcavity proposed by Yang et al, 14 which achieved an absolute modulation depth of 85.3% at a pump fluence of 339 μJ cm −2 at 2.08 μm.…”
mentioning
confidence: 99%
“…Numerous material platforms have been demonstrated for ultrafast all-optical switches, such as semiconductors, metamaterials, , two-dimensional (2D) materials, , perovskites, , and ENZ materials. Among these, ENZ materials represented by transparent conductive oxides (TCOs) have a large nonlinear response, , sub-picosecond response time, and good complementary metal oxide semiconductor (CMOS) compatibility, making them a potential all-optical switching material platform. ENZ-enhanced nonlinear refraction has inspired many studies on ultrafast all-optical switches based on TCOs, such as unpatterned ENZ films, , ENZ microcavities, , nanorods, , and nanocrystals. , A representative study in this field is the development of an ultrafast polarization all-optical switch based on the CdO Berreman microcavity proposed by Yang et al, which achieved an absolute modulation depth of 85.3% at a pump fluence of 339 μJ cm –2 at 2.08 μm. However, similarly to photonic crystal or plasmonic crystal optical switches, these optical switches operate on the principle of a nonlinear refraction-induced resonant mode shift, making it difficult to achieve wide-wavelength operation.…”
mentioning
confidence: 99%