2013
DOI: 10.1063/1.4824771
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High-contrast, all-silicon waveguiding platform for ultra-broadband mid-infrared photonics

Abstract: Suspended silicon-membrane ridge waveguides are fabricated and characterized on a single-material photonic device platform. By using direct bonding, a thin layer of silicon is fused to a bulk silicon substrate, which is patterned with narrow trenches. Waveguides are etched on the resulting suspended membranes and are characterized at mid-and near-infrared wavelengths. Transverse magnetic-mode propagation losses of 2.8 6 0.5 and 5.6 6 0.3 dB/cm at 3.39 and 1.53 lm wavelengths are measured, respectively. This al… Show more

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Cited by 59 publications
(39 citation statements)
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“…One strategy involves replacing the lossy silicon oxide cladding with other materials exemplified by silicon-on-nitride ( Figure 3A-B) [10] and germanium-on-nitride [17] or with air cladding in pedestal [11,18,19] or suspended silicon structures [12][13][14][20][21][22][23] (Figure 3C-H). Another option is Ge-on-Si (or SiGeon-Si), which claims the advantage of compatibility with Si CMOS processing, as high-quality Ge can be epitaxially grown on Si ( Figure 3I-J) [15,17,[24][25][26][27][28].…”
Section: Waveguides and Passive Devicesmentioning
confidence: 99%
“…One strategy involves replacing the lossy silicon oxide cladding with other materials exemplified by silicon-on-nitride ( Figure 3A-B) [10] and germanium-on-nitride [17] or with air cladding in pedestal [11,18,19] or suspended silicon structures [12][13][14][20][21][22][23] (Figure 3C-H). Another option is Ge-on-Si (or SiGeon-Si), which claims the advantage of compatibility with Si CMOS processing, as high-quality Ge can be epitaxially grown on Si ( Figure 3I-J) [15,17,[24][25][26][27][28].…”
Section: Waveguides and Passive Devicesmentioning
confidence: 99%
“…Similar to the discussed SON processing steps, the SOI substrate and BOX are subsequently removed and a thin Si film on the buried trench is exposed. The air-filled trench acts as the bottom 16-μm-wide trenches and the membranes are mechanically very stable [200]. In an unpublished second generation of the devices, the width has been reduced to 12 μm.…”
Section: Mid-infrared Integrated Photonic Platformsmentioning
confidence: 99%
“…The author's group has demonstrated SON and allsilicon waveguides for the first time [199,200]. We have also proposed and demonstrated the silicon on lithium niobate (SiLN) waveguide and modulator platform (see Figure 10D) [201,202].…”
Section: Mid-infrared Integrated Photonic Platformsmentioning
confidence: 99%
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