High-Characteristic-Temperature 1.3-$\mu$m-Band Laser on an InGaAs Ternary Substrate Grown by the Traveling Liquidus-Zone Method

Microscopic design of GaInNAs quantum well laser diodes on ternary substrates for high-speed and high-temperature operations

“…Currently, at most three to five wells are the experimental limitation for the growth of highly strained QWs with strain larger than 2%. 8,10,21 Furthermore, by using AlGaInAs barriers, T 0 of GaInNAs QWs is increased and comparable to that of GaInAs QWs while the strain value is kept small. T 0 of over 140 K is possible for GaInNAs/ AlGaInAs QWs with the strain around 2% by using low-In-content GanAs substrates, which are easier to fabricate.…”

“…[5][6][7][8][9][10] The larger the In content of the substrate ͑x sub ͒ is, the smaller the strain of the well layer becomes. Recently, we fabricated GaInAs/ GaInAs QW lasers on low-In-content GaInAs ͑x sub = 0.1͒ substrates with the operating wavelength of 1.28 m and the characteristic temperature T 0 of 130 K, 8 although large strain ͑ Ͼ 2%͒ was still required in the well layer. It is difficult to fabricate In-rich GaInAs substrate and the material gain of QWs is reduced if x sub is large.…”

“…T 0 of over 140 K is possible for GaInNAs/ AlGaInAs QWs with the strain around 2% by using low-In-content GanAs substrates, which are easier to fabricate. 8,9 The differential gain of QWs is deeply related to the modulation characteristics. Under the small-signal condition, the differential gain is proportional to the square of the resonance frequency.…”

1.3-μm InGaAs MQW Metamorphic Laser Diode Fabricated With Lattice Relaxation Control Based on In Situ Curvature Measurement

“…The MQWs on a GaAs substrate provide a large conduction band offset; however, device fabrication for InGa(Al)As MQW light emission at wavelengths of 1.3/1.55-μm on GaAs substrate encounters problems because of the large lattice mismatch between the MQW and substrate. Several reports have suggested that ternary material substrates such as InGaAs are suitable for improving the performance of the InGa(Al)As MQWs with a large conduction band offset [5]- [7]. In the case, it is generally difficult to improve the crystal quality and obtain a large wafer.…”

Enhanced Temperature Characteristics of InGaAs/InAlGaAs Multi-Quantum-Well Lasers on Low-In-Content InGaAs Ternary Substrates

“…The value of x sub is 0.1, 0.15, and 0.2 because it seems to be difficult to fabricate 1.3-m lasers for the substrate with x sub < 0:1. 7) All the material parameters used in the simulation and band lineups were extracted from ref. 13, and a flat band was assumed because of the large ÁE c .…”