High breakdown voltage AlGaN/GaN MIS–HEMT with SiN and TiO2 gate insulator

Yagi, Shuichi; Shimizu, Mitsuaki; Inada, Masaki; Yamamoto, Y.; Piao, G.; Okumura, Hajime; Yano, Yoshiki; Akutsu, Nakao; Ohashi, Hiromichi

doi:10.1016/j.sse.2006.04.041

Cited by 87 publications

(38 citation statements)

References 8 publications

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“…Recently, the GaN HEMTs for the switching devices have been studied energetically. The high breakdown voltage over 1kV [1,2], low specific on-resistance less than 0.1 mΩ-cm 2 [3], high current operation over 100 A [4], and dc-dc converter operation [5] have been reported.…”

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confidence: 99%

Low on‐resistance AlGaN/GaN HEMTs by reducing gate length and source‐gate length

Ide¹,

Shimizu²,

Yagi³

et al. 2008

Phys. Status Solidi (c)

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To reduce the on‐resistance of AlGaN/GaN HEMTs, the gate length (LG) and gate‐source (LSG) length were reduced to submicron order. The reduction of LG and LSG effectively decreased the drain‐source spacing (LSD), which led to the reduction of the on‐resistance without degrading the breakdown voltage. Moreover, the reduction of LG and LSG enhanced the drain current and transconductance. The specific on‐resistance of 0.1 mΩ‐cm2 was achieved at a LG of 0.10 μm and a LSG of 0.5 μm. The breakdown voltage of 56 V was obtained at a specific on‐resistance of 0.12 mΩ‐cm2. This high breakdown voltage was achieved by extending the drain‐gate spacing due to the short LG and LSG. These characteristics of the fabricated device are equivalent to the trade‐off characteristics of the numerical calculation. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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confidence: 99%

Low on‐resistance AlGaN/GaN HEMTs by reducing gate length and source‐gate length

Ide¹,

Shimizu²,

Yagi³

et al. 2008

Phys. Status Solidi (c)

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“…In our previous work, we fabricated MIS-HEMTs with ebeam-deposited TiO 2 film as gate insulator [5]. As the results, we found improvement in the gate leakage current by employing the TiO 2 film.…”

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confidence: 80%

Effects of surface passivation films on AlGaN/GaN HEMT with MIS gate structure

Yagi

Shimizu

Ide

et al. 2008

Phys. Status Solidi (c)

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We investigated the effect of ebeam‐deposited SiNx, SiO2, and TiO2 passivation films on the AlGaN/GaN HEMT structure. The AlGaN/GaN heterojunction structure was grown on a sapphire substrate by metal organic chemical vapor deposition. The sheet resistance of the AlGaN/GaN HEMT structure was 420‐510 Ω/□. TiO2, SiNx and SiO2 passivation films were employed as the insulator in MIS gate structure. All passivation films were deposited by electron beam evaporation at 200 °C. The thickness of SiNx, SiO2 and TiO2 passivation films were 15, 10 and 15 nm, respectively. The relative dielectric constants of the deposited SiNx, SiO2 and TiO2 were measured to be 4, 7 and 80, respectively by fabricating the capacitance structures. The sheet resistance was changed after the deposition of the insulator films. We found to be 512, 628 and 992 Ω/□ for the SiNx, SiO2 and TiO2 films, respectively. We considered that the surface passivation using the TiO2 and SiO2 films reduces the carrier density in the AlGaN/GaN channel. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…It has been calculated the R on for an hybrid MOS-HEMT (L G = 1 lm l MOS = 50 cm 2 /V s) for SiO 2 and different common high-k dielectrics. The dielectric constant is 7.4, 10 and 20 for SiN x , Al 2 O 3 and HfO 2 , respectively [20][21][22]. For a given gate insulator thickness the lower on-resistance is achieved for the dielectrics with the higher dielectric constant.…”

Section: Parametermentioning

confidence: 99%