High breakdown GaN HEMT with overlapping gate structure

Zhang, N.-Q.; Keller, S.; Parish, Giacinta; Heikman, S.; DenBaars, Steven P.; Mishra, Umesh K.

doi:10.1109/55.863096

Cited by 281 publications

(110 citation statements)

References 9 publications

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“…L SG reduction increases the S-G electric field, causing an increase of average electron velocity component along the channel, and consequently, an increase of I DS in the non-saturation regime. Hence, although I DS is almost independent of the L GD variation [14], it can be distinctly improved by the L SG scaling in GaN HEMTs.…”

Section: Tgdfp Design and DC Characteristicsmentioning

confidence: 96%

Design of normally-off GaN-based T-gate with Drain-Field-Plate (TGDFP) HEMT for power and RF applications

Khan

Park

2014

IEICE Electron. Express

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Abstract:In this paper, an effective T-gate with Drain-Field-Plate (TGDFP) technology is used in GaN-based HEMT for high breakdown voltage of 500 V and drain current of 540 mA/mm. Silvaco TCAD simulation showed that normally-off TGDFP HEMT with recessed gate length of 0.5 µm exhibited high threshold voltage up to +1 V and transconductance of 140 mS/mm along with frequency operation in Sband (∼3 GHz). The proposed lateral TGDFP HEMT provides desirable features for both Power and RF applications.

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Section: Tgdfp Design and DC Characteristicsmentioning

confidence: 96%

Design of normally-off GaN-based T-gate with Drain-Field-Plate (TGDFP) HEMT for power and RF applications

Khan

Park

2014

IEICE Electron. Express

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“…In fact, when the L GD is short, the reverse gate bias can easily deplete the channel layer and the buffer layer underneath, thus leading to a very high average break- down electric field. However, as the L GD gradually increases, the reverse gate bias cannot fully deplete the channel layer and the buffer layer near the drain edge, inducing a reduced average breakdown electric field [2]. Fig.…”

Section: Materials Growth and Device Fabricationmentioning

confidence: 99%

“…AlGaN/GaN high electron mobility transistors (HEMTs) are very promising for next-generation high-efficiency power switching devices due to the superior material characteristics like wide bandgap, high electron saturation velocity, and high sheet carrier density [1,2]. Recently, AlGaN has been introduced as the channel layer so as to obtain a much higher breakdown voltage due to the larger band gap of AlGaN than GaN [3,4,5,6,7,8,9,10].…”

Section: Introductionmentioning

confidence: 99%

AlGaN channel MIS-HEMTs with a very high breakdown electric field and excellent high-temperature performance

Zhang

et al. 2015

IEICE Electron. Express

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We report on AlGaN channel metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) for the first time. The insulator of 10-nm SiN x was deposited by plasma enhanced chemical vapor deposition, which induced a low reverse and forward Schottky leakage. A very high breakdown electric field of 1.8 MV/cm was reached with a gatedrain distance of 2 µm. The breakdown voltage increased non-linearly with the gate-drain distance and reached 1661 V with a gate-drain distance of 20 µm. As temperature increases from 25 to 275°C, the saturation drain current decreases slightly by 20% from 211 to 169 mA/mm and the onresistance increases only by 24%.

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“…GaN-based materials offer unique properties such as, e. g., high electron saturation velocity 1-3 and high breakdown field strength (3 MV/cm), 4,5 integration with silicon substrates. Even though GaN/AlGaN field effect transistors (FETs) for microwave applications or power switches are already established in the market 6 higher performances are required for penetration of these devices into the market for power plants.…”

mentioning

confidence: 99%

Enhanced sheet carrier densities in polarization controlled AlInN/AlN/GaN/InGaN field-effect transistor on Si (111)

et al. 2015

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We report on GaN based field-effect transistor (FET) structures exhibiting sheet carrier densities of n = 2.9 1013 cm−2 for high-power transistor applications. By grading the indium-content of InGaN layers grown prior to a conventional GaN/AlN/AlInN FET structure control of the channel width at the GaN/AlN interface is obtained. The composition of the InGaN layer was graded from nominally xIn = 30 % to pure GaN just below the AlN/AlInN interface. Simulations reveal the impact of the additional InGaN layer on the potential well width which controls the sheet carrier density within the channel region of the devices. Benchmarking the InxGa1−xN/GaN/AlN/Al0.87In0.13N based FETs against GaN/AlN/AlInN FET reference structures we found increased maximum current densities of ISD = 1300 mA/mm (560 mA/mm). In addition, the InGaN layer helps to achieve broader transconductance profiles as well as reduced leakage currents.

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High breakdown GaN HEMT with overlapping gate structure

Cited by 281 publications

References 9 publications

Design of normally-off GaN-based T-gate with Drain-Field-Plate (TGDFP) HEMT for power and RF applications

Design of normally-off GaN-based T-gate with Drain-Field-Plate (TGDFP) HEMT for power and RF applications

AlGaN channel MIS-HEMTs with a very high breakdown electric field and excellent high-temperature performance

Enhanced sheet carrier densities in polarization controlled AlInN/AlN/GaN/InGaN field-effect transistor on Si (111)

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