High average power picosecond laser for selective material processing at 1342 nm wavelength

Rodin, Aleksej M.; Grishin, M. Ya.; Michailovaś, Andrejus; Chazevskis, Gediminas; Ulevichius, Nortautas

doi:10.1117/12.2079519

Cited by 5 publications

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“…and further improvements21 reported earlier. Resistance of oscillator cavity to thermo-mechanical misalignment have been improved considerably by the integration of four-pass confocal delay line 21 formed by spherical mirrors.…”

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confidence: 80%

High average power picosecond and nanosecond laser operating at 1342nm wavelength

Rodin¹,

Grishin

Michailovaś

2015

SPIE Proceedings

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We report results of design and optimization of high average power picosecond and nanosecond laser operating at 1342 nm wavelength. This laser is comprised of master oscillator, regenerative amplifier and output pulse control module. Passively mode-locked Nd:YVO 4 master oscillator emits ~ 10 ps pulses at repetition rate of 55 MHz with average output power of ~ 100 mW. These pulses were used to seed regenerative amplifier based on composite diffusion-bonded Nd:YVO 4 rod with variable Nd doping concentration pumped at 880 nm wavelength. Laser produces 10.9 ps pulses at 300 kHz repetition rate with average output power of 11 W and nearly diffraction limited beam quality M 2 ~ 1.03. Fraction of laser output was converted to the second harmonics with 60 % efficiency providing the average power of 5 W at 671 nm wavelength. Without seeding the regenerative amplifier transforms to electro-optically cavitydumped Q-switched laser delivering 10 ns pulses at high repetition rates with beam propagation factor of M 2 ~ 1.06.Keywords: 1342 nm ps and ns laser, 671 nm ps laser, cavity-dumped Q-switching, regenerative amplifier, power and energy scaling, composite Nd:YVO 4 rod, selective micromachining at 1342 nm, CIGS scribing

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