Picosecond laser with 11W output power at 1342nm based on composite multiple doping level Nd:YVO4 crystal

Rodin, Aleksej M.; Grishin, M. Ya.; Michailovaś, Andrejus

doi:10.1016/j.optlastec.2015.07.022

Cited by 19 publications

(4 citation statements)

References 23 publications

(65 reference statements)

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“…Then, the thermal lens effect caused by the refractive index change induced by the deformation of the end face is reduced. − Furthermore, the crystals with different doping concentrations are multibonded according to the doping concentration from low to high, so that the laser gain medium away from the pump end can also absorb enough pump light energy. In this way, the overall temperature difference of the gain medium is reduced to improve the thermal effect in laser generation. − However, this bonding technology requires very strict flatness and cleanliness of the bonding surface, so the preparation process is more cumbersome. At the same time, the doping concentration at the interface of different crystal bonding is almost mutated, which will affect laser oscillation and amplification .…”

Section: Introductionmentioning

confidence: 99%

Growth of a Gradient-Doped Single-Crystal Rod with Designable Distribution of Doped Ions by a Laser-Heated Pedestal Growth Method

Dai

Dong

Zhang

et al. 2023

Crystal Growth & Design

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The thermal effect of a diode pumped solid-state laser mainly caused by nonuniform thermal distribution is the significant bottleneck limiting the output power achievable. In this work, a novel strategy to synthesize YAG crystal thin rods with a designable axial dopant gradient based on the laser-heated pedestal growth (LHPG) method was developed. To make the pump light uniformly absorbed through the whole rod, the optimal doping concentration profile along the axis of single-crystal rods (SCRs) was theoretically deduced. Finite element simulation results demonstrated that the Nd:YAG crystal thin rods with a designed dopant gradient can significantly reduce heat loads under laser operation. Using the grown gradient doped SCRs as a gain medium, the laser diode pumped continuous-wave laser at ∼1.06 μm was achieved with the highest slope efficiency of 44% and a maximum output power of 6.46 W. Under the same conditions, the slope efficiency of the uniformly doped SCRs was 38.7% and the maximum output power was 4.95 W. The results show that the SCRs with gradient dopants possess better thermal management and superior laser performance. Significantly, this method also provides a new idea for realizing the controllable distribution of doped ions in crystal growth.

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Section: Introductionmentioning

confidence: 99%

Growth of a Gradient-Doped Single-Crystal Rod with Designable Distribution of Doped Ions by a Laser-Heated Pedestal Growth Method

Dai

Dong

Zhang

et al. 2023

Crystal Growth & Design

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“…In the realm of ultrafast technology, high-repetition-rate, efficient and high-power laser sources are essential in a wide range of applications. Their profound impact is evident in a variety of fields, particularly in spectroscopy [ 1 , 2 ] , materials processing [ 3 , 4 ] and laser micromachining [ 5 , 6 ] and there are consistent pushes for the development of more reliable, efficient laser sources.…”

Section: Introductionmentioning

confidence: 99%

High-repetition-rate and High-power Efficient Picosecond Thin-disk Regenerative Amplifier

Xu,

Gao,

Liu

et al. 2023

High Pow Laser Sci Eng

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We present an effective approach to realize a highly efficient, high-power and chirped pulse amplification-free ultrafast ytterbium-doped yttrium aluminum garnet thin-disk regenerative amplifier pumped by a zero-phonon line 969 nm laser diode. The amplifier delivers an output power exceeding 154 W at a pulse repetition rate of 1 MHz with custom-designed 48 pump passes. The exceptional thermal management on the thin disk through high-quality bonding, efficient heat dissipation and a fully locked spectrum collectively contributes to achieving a remarkable optical-to-optical efficiency of 61% and a near-diffraction-limit beam quality with an M 2 factor of 1.06. To the best of our knowledge, this represents the highest conversion efficiency reported in ultrafast thin-disk regenerative amplifiers. Furthermore, the amplifier operates at room temperature and exhibits exceptional stability, with root mean square stability of less than 0.33%. This study significantly represents advances in the field of laser amplification systems, particularly in terms of efficiency and average power. This advantageous combination of high efficiency and diffraction limitation positions the thin-disk regenerative amplifier as a promising solution for a wide range of scientific and industrial applications.

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“…However, their inherent shortcomings of the conventional excimer lasers, such as comparatively large footprint, poor beam quality, and the limited pulse widths in nanosecond, limit their applications. Until now, numerous researches have been carried out in generating 1.3 µm lasers at continuous wave (CW) or pulsed operation [1,[11][12][13][14][15]. Among them, picosecond (ps) lasers are well adapted to various environments and have a flexible repetition rate and price.…”

Section: Introductionmentioning

confidence: 99%

“…To reduce the quantum defect in turn lowering the thermal load in the laser gain medium, in-band pumping the crystal directly into the upper lasing level has been investigated. The 1342 nm regenerative amplifier based on an 880 nm diode laser pumped composite multiply rod Nd-doped Nd:YVO 4 crystal was demonstrated by Rodin et al to deliver a 11 W laser output at repetition rate of 300 kHz with pulse width of 13 ps [14]. Tu et al reported an 880 nm end-pumped three-stage amplifiers with three rod-type Nd:YVO 4 crystals, which delivered an output power of 16.38 W with a pulse duration of 29.1 ps and the laser beam quality factor M 2 = 2.3 [15].…”

Section: Introductionmentioning

confidence: 99%

20 W picosecond laser output at 1342 nm based on an in-band pumped Nd:YVO₄ Innoslab amplifier

Dai¹,

Liu²,

Li³

et al. 2017

Laser Phys. Lett.

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We demonstrate a compact high power in-band pumped 1342 nm Nd:YVO 4 Innoslab picosecond amplifier. Combined with the advantages of the in-band pumping technique and Innoslab structure, a maximum average output power of 20 W at 1342 nm was achieved with a pulse duration of 24.6 ps and a repetition rate of 77 MHz. Under the full output power, the output beam quality was measured to be M 2 = 1.65. To our knowledge, this is the first report on a 1342 nm Innoslab amplifier and the highest picosecond output power at 1342 nm. The high output power and good beam quality 1342 nm picosecond laser is a promising fundamental pump source for generating deep-ultraviolet radiation at 167 nm via a frequency octupled approach.

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Picosecond laser with 11W output power at 1342nm based on composite multiple doping level Nd:YVO4 crystal

Cited by 19 publications

References 23 publications

Growth of a Gradient-Doped Single-Crystal Rod with Designable Distribution of Doped Ions by a Laser-Heated Pedestal Growth Method

Growth of a Gradient-Doped Single-Crystal Rod with Designable Distribution of Doped Ions by a Laser-Heated Pedestal Growth Method

High-repetition-rate and High-power Efficient Picosecond Thin-disk Regenerative Amplifier

20 W picosecond laser output at 1342 nm based on an in-band pumped Nd:YVO₄ Innoslab amplifier

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Picosecond laser with 11W output power at 1342nm based on composite multiple doping level Nd:YVO4 crystal

Cited by 19 publications

References 23 publications

Growth of a Gradient-Doped Single-Crystal Rod with Designable Distribution of Doped Ions by a Laser-Heated Pedestal Growth Method

Growth of a Gradient-Doped Single-Crystal Rod with Designable Distribution of Doped Ions by a Laser-Heated Pedestal Growth Method

High-repetition-rate and High-power Efficient Picosecond Thin-disk Regenerative Amplifier

20 W picosecond laser output at 1342 nm based on an in-band pumped Nd:YVO4 Innoslab amplifier

Contact Info

Product

Resources

About

20 W picosecond laser output at 1342 nm based on an in-band pumped Nd:YVO₄ Innoslab amplifier