High aspect ratio patterning with a proximity ultraviolet source

Dentinger, Paul M.; Krafcik, Karen Lee; Simison, Kelby L.; Janek, Richard P.; Hachman, John T.

doi:10.1016/s0167-9317(02)00491-4

Cited by 60 publications

(36 citation statements)

References 5 publications

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“…11,19,20 Chan-Park et al 11 found that the same 10 µm trench can experience the same capping problem especially at the center of the wafer. The solution was to lower the exposed energy during pattern exposure.…”

Section: Resultsmentioning

confidence: 99%

“…The solution was to lower the exposed energy during pattern exposure. Dentinger et al 19 explains that capping is caused by the redeposition of the SU8. Becnel 20 explains that the diffusion of the exposed SU8 into the unexposed area forms the "cap."…”

Section: Resultsmentioning

confidence: 99%

“…18,21 We suspected that the capping only happens at the trenches near the center of the wafer 11 was due to the fact that greater internal stress was induced in the region. The actual physical process of this capping might be far more complicated (i.e., capping might also be caused by high exposed energy or redeposition after development 19 ). However, in our case, the PEB temperature seems to be the major factor in creating the capping problem in our structure.…”

Section: Resultsmentioning

confidence: 99%

See 2 more Smart Citations

Flexible polymeric rib waveguide with self-align couplers system

Huang

Wang

2008

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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The authors report a polymeric based rib waveguide with U shape self-align fiber couplers system using a simple micromolding process with SU8 as a molding material and polydimethysiloxane as a waveguide material. The material is used for its good optical transparency, low surface tension, biocompatibility, and durability. Furthermore, the material is highly formable. This unique fabrication molding technique provides a means of keeping the material and manufacturing costs to a minimum. The self-align fiber couplers system also proves a fast and simple means of light coupling. The flexible nature of the waveguide material makes this process ideal for a potential wearable optical sensor.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Flexible polymeric rib waveguide with self-align couplers system

Huang

Wang

2008

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…In recent years, a microfabrication process: UV thick photoresist lithography has become a popular research area of micro-systems produce [1][2][3][4].Silicon wafers, glass and organic polymers are usually selected as the matrix material of microfluidic chips. Glass-based microfluidic chip has been extensive attention in the last ten years [5].…”

Section: Introductionmentioning

confidence: 99%

Microfluidic Chips Etching Process on Soda-lime Glass

Wang¹,

Qichang²,

Yu³

et al. 2012

Proceedings of the 1st International Conference on Mechanical Engineering and Material Science

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Abstract-The process to manufacture microfluidic chip using quartz glass or Pyrex 7740 glass is expensive and complex. In order to overcome these, save production costs, simplify the process, and shorten the production cycle, soda-lime glass was designed as substrate carrier; positive photoresist AZ 4620 was designed as mask layer, to make the microfluidic chip production process efficient, rapid, and low-cost. Some key technique, such as thickness of photoresist, various stages of baking parameters, exposure and developer volume, etching environment and the glass buffered oxide etching (BOE) ratio had been solved. The adhesion of the photoresist with the glass, and photoresist's tolerance time in BOE had been solved as well. With the optimized process, the etching depth can achieve 80μm, the minimum feature size could be less than 50μm, the sidewall steepness is less than 100°, the flatness error is less than ± 1.5μm, and the production cycle is only 4 hour.

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“…Many authors have been exploring this technique, in several fields of MEMS and MOEMS applications. Dentinger and associates studied the influence on the final resolution for thick resists exposed in proximity mode [11]. Kathleen investigated modeling and characterization of the resolution of proximity printing x-ray lithography [12].…”

Section: Introductionmentioning

confidence: 99%

Diffractive phase-shift lithography photomask operating in proximity printing mode

et al. 2010

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A phase shift proximity printing lithographic mask is designed, manufactured and tested. Its design is based on a Fresnel computergenerated hologram, employing the scalar diffraction theory. The obtained amplitude and phase distributions were mapped into discrete levels. In addition, a coding scheme using sub-cells structure was employed in order to increase the number of discrete levels, thus increasing the degree of freedom in the resulting mask. The mask is fabricated on a fused silica substrate and an amorphous hydrogenated carbon (a:C-H) thin film which act as amplitude modulation agent. The lithographic image is projected onto a resist coated silicon wafer, placed at a distance of 50 µm behind the mask. The results show a improvement of the achieved resolution -linewidth as good as 1.5 µm -what is impossible to obtain with traditional binary masks in proximity printing mode. Such achieved dimensions can be used in the fabrication of MEMS and MOEMS devices. These results are obtained with a UV laser but also with a small arc lamp light source exploring the partial coherence of this source.

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High aspect ratio patterning with a proximity ultraviolet source

Cited by 60 publications

References 5 publications

Flexible polymeric rib waveguide with self-align couplers system

Flexible polymeric rib waveguide with self-align couplers system

Microfluidic Chips Etching Process on Soda-lime Glass

Diffractive phase-shift lithography photomask operating in proximity printing mode

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