High-&amp;lt;tex&amp;gt;$kappa$&amp;lt;/tex&amp;gt;/Metal–Gate Stack and Its MOSFET Characteristics

Chau, R.; Datta, Suman; Doczy, M.; Doyle, B.S.; Kavalieros, J.; Metz, M.

doi:10.1109/led.2004.828570

Cited by 472 publications

(210 citation statements)

References 8 publications

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“…An additional scattering mechanism due to soft optical phonons in the high-k layer has been theoretically predicted by Fischetti et al, 10 and experimental evidence of the soft optical phonons influence on carriers mobility was found through temperature dependence studies. [2][3][4][5][6][7][8][9][10] The beneficial effect of metal gate electrode screening on the high-k phonon-electron interaction has been reported by Datta et al 2 and Chau et al 3 to result in a higher mobility value than measured in the corresponding high-k/polysilicon gate stacks. However, a more recent work by Maitra et al 8 did not observe a difference between polysilicon or metal gate electrodes for HfO 2 gate MOSFETs.…”

Section: Introductionmentioning

confidence: 88%

“…Hafnium-based high-k dielectrics and metal gate electrodes have been extensively investigated as alternative gate materials, [1][2][3][4][5][6][7][8][9][10][11] and the successful incorporation of hafnium based high-k materials into the gate stack of MOSFETs with minimum feature sizes of 45 nm has recently been announced. 12 However, there are still many issues associated with the implementation of these materials.…”

Section: Introductionmentioning

confidence: 99%

“…[1][2][3][4][5][6][7][8][9][10][11] This degradation has been attributed to the contributions of oxide charge in the high-k layer ͑columbic scattering͒, high-k phonon scattering, silicon phonon scattering, and surface roughness scattering. It has recently been demonstrated that interface defect densities in the range of ͑3-4͒ ϫ 10 10 cm −2 and fixed positive oxide charge densities Ͻ2 ϫ 10 12 cm −2 do not yield significant mobility degradation.…”

Section: Introductionmentioning

confidence: 99%

“…[2][3][4][5][6][7][8][9] In this paper, we report a detailed study of electron mobility at high inversion charge density ͑ϳ8 ϫ 10 12 cm −2 ͒ in TiN/ HfO 2 / SiO x / Si n-channel MOSFETs. The devices examined have HfO 2 film thickness values of 1.6, 2, 2.4, and 3 nm and a fixed interface SiO͑N͒ layer of ϳ1.0 nm with identical device processing in all respects, allowing us to examine the influence of HfO 2 thickness on mobility degradation.…”

Section: Introductionmentioning

confidence: 99%

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Analysis of electron mobility in HfO2/TiN gate metal-oxide-semiconductor field effect transistors: The influence of HfO2 thickness, temperature, and oxide charge

Negara

Cherkaoui

Hurley

et al. 2009

Journal of Applied Physics

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We report a new analysis of electron mobility in HfO 2 / TiN gate metal-oxide-semiconductor field effect transistors ͑MOSFETs͒ by investigating the influence of HfO 2 thickness ͑1.6-3 nm͒, temperature ͑50-350 K͒, and oxide charge ͑ϳ1 ϫ 10 11 -8ϫ 10 12 cm −2 ͒ in the high inversion charge region. The fixed oxide charge and interface state densities are deliberately increased using negative-bias-temperature stress, allowing the determination of the Coulomb scattering term as a function of temperature for various oxide charge levels. The temperature dependence of the Coulomb scattering term is consistent with the case of a strongly screened Coulomb potential. Using the experimentally determined temperature dependence of Coulomb scattering term, a model is developed for the electron mobility, including the effects oxide charge ͑ C ͒, high-k phonon ͑ Ph-Hk ͒, silicon phonon ͑ Ph-Si ͒, and surface roughness scattering ͑ SR ͒. The model provides an accurate description of the experimental data for variations in HfO 2 thickness, temperature, and oxide charge. Using the model the relative contributions of each mobility component are presented for varying oxide charge and high-k thickness. Scaling of the HfO 2 physical thickness provided a reduction in the oxide charge and high-k phonon scattering mechanisms, leading to an increase in electron mobility in HfO 2 / TiN gate MOSFETs.

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Section: Introductionmentioning

confidence: 88%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Analysis of electron mobility in HfO2/TiN gate metal-oxide-semiconductor field effect transistors: The influence of HfO2 thickness, temperature, and oxide charge

Negara

Cherkaoui

Hurley

et al. 2009

Journal of Applied Physics

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“…In addition, the heavily doped polycrystalline silicon gate electrode may have to be replaced with metal electrodes. Midgap gate electrode metals, such as TiN, are being extensively investigated [1][2][3][4]. The metal/dielectric and the dielectric/Si interface determine the CMOS device performance, including channel mobility and threshold voltage.…”

mentioning

confidence: 99%

Scanning transmission electron microscopy of gate stacks with HfO2 dielectrics and TiN electrodes

Agustin

Fonseca²,

Hooker

et al. 2005

Applied Physics Letters

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High-angle annular dark-field (HAADF) imaging and electron energy-loss spectroscopy (EELS) in scanning transmission electron microscopy were used to investigate HfO2 gate dielectrics grown by atomic layer deposition on Si substrates, and their interfaces with TiN electrodes and silicon, as a function of annealing temperature. Annealing at high temperatures (900°C) caused significant roughening of both bottom (substrate) and top (electrode) interface. At the bottom interface, HAADF images showed clusters of Hf atoms that protruded into the interfacial SiO2 layer. Low-loss EELS established that even crystalline HfO2 films exposed to relative high temperatures (700°C) exhibited significant differences in their electronic structure relative to bulk HfO2. Further annealing caused the electronic structure to more closely resemble that of bulk HfO2, with the most significant change due to annealing with the TiN electrode.

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Electron and Hole Mobility in Semiconductor Devices

Ghibaudo

Rafhay

2014

Wiley Encyclopedia of Electrical and Electronics Engineering

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Carrier mobility in a semiconductor is one of the most important parameters for the operation of electronic devices. Actually, the mobility measures the ability of free carriers (electrons or holes) to move in the material as it is subjected to an external electric field. The magnitude of the mobility directly impacts on the device performance since it determines the operation speed through the transit time across the device, the circuit operating frequency, or the sensitivity in magnetic sensors. In this article, the basic aspects of electronic transport in a semiconductor will be addressed, first with a special emphasis on the mobility behavior. Then a brief review of the transport properties for Silicon and GaAs will be presented owing to typical electron and hole mobility data for majority and minority carriers. Finally, some specific mobility results for field effect transistors such as Si MOSFETs, GaAs heterostructure field effect transistors ( HFET ) as well as GaAs and Ge based MOSFETs will be discussed.

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High-<tex>$kappa$</tex>/Metal–Gate Stack and Its MOSFET Characteristics

Cited by 472 publications

References 8 publications

Analysis of electron mobility in HfO2/TiN gate metal-oxide-semiconductor field effect transistors: The influence of HfO2 thickness, temperature, and oxide charge

Analysis of electron mobility in HfO2/TiN gate metal-oxide-semiconductor field effect transistors: The influence of HfO2 thickness, temperature, and oxide charge

Scanning transmission electron microscopy of gate stacks with HfO2 dielectrics and TiN electrodes

Electron and Hole Mobility in Semiconductor Devices

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